Jr., Series Editor
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`Prentice Hall Series in Solid State Physical Electronics, Nick Holonyak,
`
`Fourth Edition
`
`Ben G. Streetman
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`FOURTH EDITION
`
`Solid State.
`Electronic Devices
`
`Microelectronics Research Cen
`
`BEN G. STREETS
`ereeandCompu Engineering
`
`The University of Te
`
`z= PRENTICE HALL
`EnglewoodCliffs, New Jersey 07632
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`Library of Congress Cataleging-in-Publication Dara
`Streetmaa, Ben G.
`Solid state electronic devices / Bea G. Sereetman. ~ 4th ed
`Pp
`om. — (Prentice Hall series in solic state physical
`cloctronics)
`Inclades tibtiographical referezces and index
`ISBN 0-13+138767=6 (hard cover)
`1. Semiconductors. 1. Tite. IL. Series.
`TK
`£5,577 1995
`621.38152-de0
`
`37720
`cP
`
`Acquisitions Editor; Alan Apt
`Production Editor: Joe Scordato
`Interior Design: Lee Cohen
`Cover design: Amy Rosen
`Cover: Power PC RISC microprocessor chip courtesy of IBM Corp.
`Photograph by Tom Way.
`Manufacturing buyer: Lori Bulwin
`
`= © 1995, 1990, 1980, 1972 by Prentice-Hall, Inc.
`=
`A Simon & Schuster Company
`Englewood Cliffs, New Jersey 07632
`
`All rights reserved. No part of this book may be
`reproduced, in any form or by any means,
`without permission in writing from the publisher.
`
`Printed in the United States of America
`109.8 Fi GS a Se a
`
`ISBN 0-13-1S87b?-6
`
`Prentice-Hall International (UK) Limited, London
`Prentice-Hall of Australia Pty. Limited, Sydney
`Prentice-Hall Canada Inc., Toronto
`Prentice-Hall Hispanoamericana, $.A., Mexico
`Prentice-Hall of India Private Limited, New Dethi
`Prentice-Hall of Japan, Inc., Tokyo
`Simon & Schuster Asia Pte. Ltd., Singapore
`Editora Prentice-Hall do Brasil, Lida., Rio de Janeiro
`
`
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`Section 9.4
`
`CHARGE TRANSFER DEVICES
`
`359
`
`TEA
`
`Figure 9-22
`The basic CCD,
`composedof a
`linear array of MOS
`Capacitors. At time
`are positive, and
`t, the G, electrodes
`the charge packet
`is stored in the G,
`potential well. At t
`both G, and CG,are
`positive, and the
`chargeis
`distributed
`between the two
`wells. At ¢; the
`potential on G,is
`reduced, and the
`charge flows to the
`second well. At t,
`the transfer of
`charge to the G,
`well is completed.
`
`
`
`d,
`
`not =]
`|
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`;
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`|
`|
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`;
`
`eS |
`|
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`|
`|
`
`«
`
`ty
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`|
`
`:
`!
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`
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`;
`!
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`;
`Meath?
`
`V,<V;
`-
`
`V3 (+)
`
`in Fig. 9-22. Attime1, a potential well exists under each G,electrode, and we
`assume this well contains a packet of electrons from a previous operation. At
`time f, a potential is applied also to the adjacent electrode G;, and the charge
`equalizes across the common G,-G,well. It is easy to visualize this process by
`thinking of the mobile charge in analogy with a fluid, which flows to equalize
`its level in the expanding container. This fluid model continues at t; whenV,is
`reduced, thus decreasing the potential well under G,. Nowthe charge flows
`into the G; well, and this process is completed at 1, when V, is zero. Bythis
`Process the packet of charge has been moved from under G,to G3. As the pro-
`cedure is continued, the charge is next passed to the G, position, and continues
`downtheline as time proceeds. In this way charge can be injected using an in-
`put diode, transported down theline, and detected at the other end.
`
`|
`
`Improvements on the Basic Structure
`9.4.3.
`Several problems arise in the implementation of the CCDstructure of Fig. 9-22.
`For example, the separation between electrodes must be very smal] to allow
`coupling between the wells. An improvement can be made by using an over-
`lapping gate structure such as that shown in Fig. 9-23. This can be done, for
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