ae eee 7
`6lw kseS
`
`R
`
`E
`
`Ss
`
`E
`
`A
`
`R
`
`H
`
`|
`
`N
`
`Cc
`
`Properties and Specifications for
`SiC Thick Epitaxy
`
`Epitaxial Specifications:
`
`
`
`X4SIC-B-N8E18S8X0
`
`X4SIC-B-N2E18S8X0
`
`
`
` Substrate Type
`
`
`X4S|IC-B-N1E19S8X0
`
`C4SIC-D-N8E18S8RO
`
` Nitrogen
`
` EPI Thickness
`
`Typical Doping Density
`(typical)
`(Np - Na)
`
`2.5E + 15/em*
`20um
`30um
`1.5E + 15/em?
`
`
`40um
`1.0E + 15/em?
`9.0E + 14/cm?
`
`
`Notes: 1) Thickness (mean) + 10% (of typical spec)*
`2) Thickness uniformity (o/mean) 10%*
`3) Doping Tolerance + factor of 2*
`4) All wafers will be edge ground
`5) Available on abovelisted substrates only
`6) All layers will be preceded by a lum N+ buffer layer
`
`* Outer 3mm edge exclusion
`
`Please contact our sales departmentfor pricing, availability, and additional epitaxial layers.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 1 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 1 of 14
`
`€
`

`

`ae aeF-
`
`R
`
`E—
`
`S$
`
`E—
`
`A
`
`R
`
`C
`
`H
`
`|
`
`oN
`
`C
`
`Properties and Specifications for
`50.8mm (2 inches) SiC Wafer
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`Diameter
`Tolerance
`
`Thickness
`Tolerance
`
`Dopant
`n-type
`
`Orientation
`On-Axis
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`4H
`
`6H
`
`Single Crystal
`Hexagonal
`3.26eV
`4.9 Wicm e K
`a=3.073A
`c=10.053A
`~9
`
`Single Crystal
`Hexagonal
`3.03eV
`4.9 Wicm e K
`a=3.081A
`c=15.117A
`=Q
`
`50.8mm (2 inches)
`+ .75mm (.030 inches)
`
`0.33 mm (0.013 inches)
`+ 0.13mm (.005 inches)
`
`Nitrogen
`
`6H {0001} + 0.5°
`4H 8° + 0.5° Off {0001} toward <112 0> + 10°
`
`Silicon face polished
`
`FLUOROWARE® Single Wafer Container
`
`Part Number
`
`Typical Resistivity
`
`
`Typical Doping
`Density
`
`
`n-type = Np-Na
`
`
`2.00E+18/cm
`
`C6SIC-D-N2E18S2R0
`
`C4SIC-D-N8E18S8RO
`
`N
`
` 20 mQ -cm
`
`DOPING DENSITY TOLERANCE: +afactor of 2
`
`Note: These wafers available in Research Grade Only
`
`Please contact our sales department about product availability and pricing for items outside our standardranges.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 2 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 2 of 14
`
`

`

`Applications and Benefits for Devices Fabricated From
`4H-SiC and 6H-SiC Substrates
`
`
`
`APPLICATIONS
`
`BENEFITS
`
`HIGH FREQUENCY POWER DEVICE (RECOMMENDED MATERIAL: 4H-SiC)
`
`® Solid state phased array radar systems
`© Communication Systems
`e Solid state UHF broadcast sytems
`e High frequency powersupplies
`e Electronic countermeasures- jamming and threat
`warning systems
`
`e Increase output powerof solid state RF devices by factor of 4
`© Reduce system weight and volume
`© Operate in elevated temperature and high radiation environments
`e Reduce device cooling requirements
`e Offer power densities that are 4 times higher than Si or GaAs
`devices
`
`HIGH POWER DEVICES (RECOMMENDED MATERIAL: 4H-SiC)
`
`© Powerelectronics for power generating systems
`e Surge suppressors
`© Powerconditioning for electric vehicles
`© Electronic actuators
`
`Solid state lamp ballasts
`
`HIGH TEMPERATURE DEVICES
`
`e Jet engine sensors, actuators and control electronics
`e Spacecraft power conditioning electronics and sensors
`e Transmitters for deep well drilling
`
`e
`
`Industrial process measurement and control
`
`instrumentation
`
`e Distributorless electronic ignitions
`
`e Automotive engine sensors
`
`OPTOELECTRONIC DEVICES
`
`e Full-color displays
`© Full-color photographic slide scanners and film exposure systems
`
`e
`
`Indicators for instrumentation and consumerelectronics
`
`© Blood-oxygen analysis
`e Air quality monitoring equipment
`
`e Solid state flame detectors for combustion control
`
`e UV dosimetry for industrial processes
`e
`Incomingballistic missile detection and imagine
`
`Il - V NITRIDE DEPOSITION
`
`e Blue LEDs
`e Blue laser diodes
`
`© MESFETs
`° HEMTs
`
`e Green LEDs
`
`e UV Emitters
`
`e Lowervoltage drop for unipolar devices
`e Up to 100 times the powerdensity of Si devices
`e Increased number of powerdevices per unit area
`© Reducedsize and weight ofcooling systems
`e Excellent transient characteristics including high switching speed
`and the elimination of large reverse-recovery currents
`
`e Sensoroutput signal amplification at high temperatures
`© Reduce or eliminate need for cooling of engine electronics
`e Aircraft weight savings - sensor amplification at point of
`measurementeliminates need for heavy shielding conduit for small
`signal transmission
`e Reliable sensing and control in aggressive environments not
`currently served by solid-state electronics
`© Reduce size and weightof satellites and space platforms by
`allowing electronics to operate at higher temperature
`e
`Improved device reliability due to long term chemical and thermal
`stability at elevated temperatures
`
`© Highreliability
`e Blue LEDsused together with red and green LEDSs allowthe
`productionof solid state light of any color in the visible spectrum
`e Detectors operate at >350°C while maintaining excellent efficiency
`e Nearly solar blind detection (99% ofthe response is in the UV range)
`e PN junction leakage currents 10° - 10° times less than Si junctions
`for sensitivity up to 10,000 times greater than commonSi based UV
`photodetectors
`e Low dark current eliminates need for cryogenic cooling
`e
`UVspectroscopy
`
`e Close matchof lattice parameters and coefficient
`e High thermal conductivity substrate offers greater power handling
`and improvedreliability.
`e Electrical conductivity allows vertical device structure
`e Best technological approach for short wavelength laser diodes, which
`significantly increase optical storage capacities
`e Electrical conductivity which ranges from insulating for microwave
`devices to conducting for LEDs and laser diodes
`e HBTs
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 3 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 3 of 14
`
`

`

`CREE’S LATEST DEVICE RESULTS*
`
`High Power
`
`Schottky diodes
`
`4H-SiC npnp thyristors
`
`Field Control Thyristor
`
`4H-SiC Power MOSFETs
`
`High Frequency
`
`4H-SiC MESFETs
`
`blocking of 800V with 0.5 Amps of rated
`current
`
`reverse leakage current equal to 44nA at 700V
`
`blocking of 900V and on-current of 2.0 Amps
`7OOV, 6A with V; of 3.7V (1000 A/cm”)
`
`335V, 1A (525A/cm?), operation up to 500kHz
`Operation up to 350°C
`
`block voltages up to 260V with specific on-
`resistance of 18 me -cm2
`
`block 890V with on current of 5mA
`175V, 2A (200A/cm?) with Vf of 2.65V
`
`fmax of S0GHz
`F, of 22GHz,
`class A power densities of 3 W/mm at 1.8GHz
`e class B power densities of 2 W/mm with power added
`efficiencies of 66% and 50% at 850 MHz and 1.8GHz
`respectively
`15 Watts CW total at 2.1GHz, with power added
`efficiencies of 54%
`
`High Temperature
`
`MOSFETs
`
`MESFETs
`
`operated up to 350°C
`
`operated up to 500°C
`
`buried gate JFETs
`
`operated up to 500°C
`
`4H-SiC npnp thyristors
`
`operated up to 500°C
`
`BJTs
`
`PMOS circuits
`
`operated up to 400°C
`
`operated up to 400°C
`
`NMOS enhancement-mode
`ring oscillators
`
`operated to 350°C
`17 stage with gate delays of 15 nsec at RT
`
`CMOS operational amplifiers
`
`open loop gain ~10,000 at RT
`input offset voltage < 100mV at RT
`
`OptoElectronics
`
`Blue Laser Diode
`
`GaN on SiC with cleaved facets
`423 nm emission, CW operation for >15 seconds @ RT
`
`*Devices not commercially available
`
`08/15/97
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 4 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 4 of 14
`
`

`

`
`
`Properties and Specifications for
`Semi-insulating
`4H-Silicon Carbide
`
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Single Crystal 4H
`Hexagonal
`3.26 eV
`4.9 Wicm e K
`a=3.073«
`c = 10.053 «
`
`Mohs Hardness
`
`oS)
`
`SUBSTRATE SPECIFICATIONS
`
`Diameter
`Tolerance
`Thickness
`Tolerance
`
`Conductivity Type
`Resistivity
`Orientation
`
`Off-axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`EPITAXIAL SPECIFICATIONS
`
`34.9 mm(1.375 inches)
`+ 0.5 mm0.020 inches)
`0.33 mm (0.013 inches)
`+ 0.13 mm (0.005 inches)
`semi-insulating
`>= 1E5 ohm-cm
`
`8° off-axis + 0.5° Off 40001} toward <112 0> + 10°
`
`4101 OF +10°
`Silicon face polished
`Polish damage removed onsilicon face
`FLUOROWARE®Single Wafer Container
`
`
`
` |type|type
`
`
`
`
`Net Doping Density
`5 x 10'°-1 x 10'%/cm® [(ND-NA) or (NA-ND)]
`
`
`
`
`+a factor of 2
`
`
`Thickness Range
`0.10 - 10.0 microns
`+ 25% of selected thickness
`Tolerance
`
`
` Tolerance
`
`
`
`Physical properties for n-type 4H SiC as reported in Landolt-Bornstein: Semiconductors:
`Physics of Group IV and IH-V Compounds, Vol. 17, 1982.
`
`§ Total thicknessofall epitaxial layers combined cannot exceed 10 microns.
`t Thickness (maximum or minimum)of any given epitaxial layer is dependent on dopinglevel
`desired.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 5 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 5 of 14
`
`

`

`ae eee £-
`
`4REE Ny
`
`R
`
`E
`
`s
`
`E
`
`A
`
`R
`
`c
`
`H
`
`=
`
`il
`
`N
`
`Cc
`
`Properties and Specifications for
`4H-Silicon Carbide
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`Diameter
`Tolerance
`
`Thickness
`Tolerance
`
`Dopant
`n-type
`p-type
`
`Orientation
`
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`Single Crystal 4H
`Hexagonal
`3.26 eV
`4.9 Wicm e K
`a=3.073A
`c= 10.053 A
`mg
`
`34.9mm(1375 inches)
`+ 0.5 mm (0.020 inches)
`
`33
`0.33 mm (0.013 inches)
`0.1
`+
`0.13 mm (0.005 inches)
`
`Nitrogen
`Aluminum
`
`8° + 0.5° Off {0001} toward <113 0> + 10°
`{101 0} + 10°
`Silicon or Carbon face polished as specified
`Polish damage removed on specified face
`FLUOROWARE® Single Wafer Container
`
`STANDARD MICROPIPE DENSITY
`Typical Doping Density|Typical Resistivity
`
`
`Part Number Type|Axis Micropipe Density
`n-type = Np-Na
`p-type = Na-Np
`
`.042 W-cm
`2.00E+18/cm
`100-200 micropipes/cm”
`C4SIC-B-N2E18S8X0
`.020 Q -cm
`
`C4SIC-B-N8E18S8X0|n_|8°off|100-200 micropipes/cm? 8.00E+18/cm
`
`C4SIC-B-N1E19S8X0|nn|8°off|[108-200micronipes/cm200 micropipes/cm* >1,00E+19*/cm
`
`<.0175 Q-cm
`
`4.85 Q-om
`C4SIC-B-P1E18S8RO|p|8°off| -|
`SELECT MICROPIPE per
`
`pical Resistivit
`.042 Q -cm
`.020 Q -cm
`<.0175 Q -cm
`
`
`
`pical Resistivit
`
`
`
`
`.020 Q-cm
`SCENGETSORO| 4|Bot[50marpbesten?” |B00E*Taran
`
`
`<.0175 Q -cm
`[ASIC-B-NTETSS8XO|_n|8"off|<20micropipes/om®|__>1.00E+19%/om
`
`DOPING DENSITY TOLERANCE: +afactor of 2
`
`NOTE: Unless otherwise designated, all parts available in research or production grade.
`
`Please contact our sales department about productavailability and pricing for items outside our standard
`ranges.
`
`Rev, 0797
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 6 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 6 of 14
`
`

`

`2 em,a
`-_ wee ee QSa
`
`R
`
`E
`
`Ss
`
`E
`
`A
`
`R
`
`Cc
`
`H
`
`|
`
`N
`
`6
`
`Properties and Specifications for
`6H-Silicon Carbide
`
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`Single Crystal 6H
`Hexagonal
`3.03 eV
`4.9 WicmeK
`a=3.081A
`c=15.117A
`9
`
`Diameter
`
`Tolerance
`
`Thickness
`Tolerance
`Dopant
`n-type
`p-type
`
`Orientation
`On-Axis
`
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`B Size = 34.9mm (1.375 inches)
`C Size = 41.3 mm (1.625 inches)
`+ 0.5 mm (0.020 inches)
`
`0.33 mm (0.013 inches)
`+ 0.13 mm (0.005 inches)
`
`Nitrogen
`Aluminum
`
`{0001} +0.5°
`3.5° + 0.5° Off {0001} toward <112 0> + 10°
`{101 0} + 10°
`Silicon or Carbon face polished as specified
`Polish damage removed on specified face
`FLUOROWARE® Single Wafer Container
`
`Part Number
`
`Typical Resistivity
`
`
`Typical Doping
`Density
`n-type = Np-Na
`
`p-type = Na-Np
`
`.102 Q-cm
`
`
`.062 Q-cm
`
`
`.042 Q-cm
`
`
`.062 Q-cm
`
`
`2.00E+18/cm°
`3.5° off
`
`
`DOPING DENSITY TOLERANCE: + a factor of 2
`
`
`
`
`
`C6SIC-B-P2E18S1X0
`
`NOTE: Unless otherwise designated, all parts available in research or production grade.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 7 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 7 of 14
`
`

`

`am oOBillll mgi > x a =e
`
`I |
`Ml
`nol Iill
`
`ml =
`INC
`The Leaderin Silicon Carbide Solid State Technology
`
`G:SiC Technology™
`Super Blue LED
`C430-DH290-E0200
`
`Features
`e High Performance — 750u4W
`
`Applications
`e
`Full Color Displays & Moving Message Signs
`
`e
`
`e
`
`Superior SiC Substrate Technology
`
`e
`
`Solid State Incandescent Replacement Bulbs
`
`430 nm Peak Wavelength
`
`e High Ambient Panel Indicators
`
`e Excellent Chip to Chip Consistency
`
`e Color Printers & Scanners
`
`e High Reliability
`
`e Medical & Analytical Instruments
`
`Description
`
`Cree’s Super blue LEDsare a new generation of solid-state blue LED emitters which combine highly
`efficient GaN with Cree’s proprietary SiC substrate to deliver the ultimate price/performance for high
`intensity blue LEDs. The C430-DH290-E0200 is designed for use in high ambientlight conditions
`with a typical output of 750 wW and a 430 nm peak wavelength (at 20 mA).
`
`C430-DH290-E0200 Chip Diagram
`
`Topside View
`
`Die Cross Section
`
`GSiC LED Chip
`10.4 X 10.4 mils
`
`Mesa(junction)
`
`Gold Bond Pad
`
` GaN
`8 X 8 mils
`4 X 4 mils SiC Substrate
`
`
`
`Anode(+)
`
`t=10 mils
`
`Backside
`Metallization
`
`Cathode(-)
`
`in
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 8 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 8 of 14
`
`

`

`
`
` M
`G:SiC Technology’
`Super Blue LED
`
`C430-DH290-E0200
`
`
`Maximum Ratings at T, = 25°C
`
`DC Forward Current °° '™
`Peak Forward Current (1/10 duty cycle @ 1kHz) Nate Laas
`LED Junction Temperature “°“
`Reverse Voltage
`Operating Temperature Range
`Storage Temperature Range
`lectrostatic Discharge Threshold (HBM)
`E
`g
`(
`
`**°
`
`)
`
`Electrical/Optical Characteristics at T, = 25°C
`If =20 mA
`Symbol(units)
`Ve(V)
`P (uW)
`I
`A
`I, (med)
`Ap (nm)
`Aa (nm)
`iA (nm)
`t (ns
`
`Description
`Forward Voltage ore
`Radiant Flux “°°
`Reverse Current
`(Vr = 5V
`LuminousIntensity “°“
`Peak Wavelength °°
`Dominant Wavelength “°°
`Halfwidth
`Optical Rise Time
`
`Mechanical Specifications
`
`Description
`P-N Junction Area (jum)
`Bottom Area
`(um
`Chip Thickness (um)
`Au Bond Pad Area (um)
`Au Bond Pad Thickness (um)
`Back Contact Grid Spacing (um)
`Back Contact Metal Width (um)
`
`C430-DH290-E0200
`25 mA
`70 mA
`125°C
`5V
`-20°C to +80°C
`~30°C to +100°C
`200 V
`
`C430-DH290-E0200
`Typ.
`3.8
`750
`—
`100
`—_—
`—
`65
`30
`
`Min.
`—
`500
`—_
`—
`424
`462
`-—
`—_
`
`Max.
`4.5
`—
`10
`—
`430
`468
`—
`—
`
`C430-DH290-E0200
`Dimension
`200 x 200
`260 x260
`250
`100 x 100
`1.1
`140
`15
`
`Tolerance
`+ 25
`a 25
`ae DS
`+ 20
`+ 0.5
`+ 15
`+10
`
`2.
`
`3.
`
`4.
`5.
`
`Notes:
`1. Maximum ratings are package dependent. The forward currents (DC and Peak) are by the effect of the LED junction temperature on
`the package. Please refer to figures 5 and 9 for specific derating curves.
`The junction temperature limit of 125°C is not a limit of the G SiC die, but a limit of the T-1 % package used for characterization.
`Junction temperature should be characterized in a specific package to determine limitations.
`In general the junction temperature is a
`function of the lead frame material. Cree only guarantees the above maximum ratings. Cree recommends a maximum assembly
`processing temperature of 200°C,
`Cree guarantees minimum and maximum specifications. All measurements are based on Cree's T-1 %4 lamps whichare built from
`samples of die from each wafer as measured in a Photoresearch Spectrascan Integrating Sphere.
`This measurementis based on Cree's T-1 % lamp with a 30°C viewing angle.
`Productresistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
`The RAETprocedures are designed to approximate the ESD threshold ratings shown. Seller gives no other assurances regarding the
`ability of the products to withstand ESD.
`The efficiency of these chips decreases at higher currents, please refer to Fig 3 and 7 for specific efficiency curves based on Cree’s
`T-1 % lamps using Hysol OS4000 epoxy.
`
`6.
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 9 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 9 of 14
`
`

`

`~~
`_K-:= eS
`
`RESEARCHs*:
`
`INC
`
`The Leader in Silicon Carbide Solid State Technology
`
`C430-DH290-E0200
`
`G:SiC Technology™
`Super Blue LED
`
`Fig. 1
`
`Forward Voltage vs. Forward Current
`
`Fig. 2 Relative Intensity vs. Wavelength
`
`20
`
`o
`z
`ie
`E 10
`Oo
`a
`gS
`2
`2
`
`_100
`a
`2
`a
`= 50
`on
`8
`2
`
`}
`
`\
`
`>
`
`1
`
`2
`
`3
`
`4
`
`5
`
`390
`
`440
`
`490
`
`540
`
`590
`
`640
`
`Forward Voltage (V)
`
`Wavelength (nm)
`
`Fig.3
`
`Relative Intensity vs. Forward Current
`
`Fig.4
`
`Relative Intensity vs. Lead Temperature
`(Pulsed 20 mA; 300pus pulse, 10ms period)
`
`
`
`10
`
`>
`2
`2
`|
`2
`2
`
`0.1
`
`125
`
`= 100
`2B
`5 75
`=
`g 50
`325
`
`0
`
`0
`
`5S
`
`10
`
`15
`
`20
`
`25
`
`30
`
`Forward Current (mA DC)
`
`Fig.5
`
`Forward Current vs. Ambient Temperature
`
`Fig.6
`
`0
`
`25
`
`50
`
`75
`
`100
`
`Lead Temperature (°C)
`
`Peak Forward Voltage vs. Forward Current
`(100s test pulse, 1% duty cycle)
`
`_100<
`
`
`
`5
`5
`O
`g
`e
`£
`
`o 30
`
`< S
`
`20
`
`:
`6
`2 10
`s
`é
`“0
`
`0
`
`25
`
`50
`
`75
`
`100
`
`l
`
`2
`
`3
`
`4
`
`5
`
`6
`
`Ambient Temperature (°C)
`
`Forward Voltage (V)
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 10 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 10 of 14
`
`

`

`Fig. 7 Relative Intensity vs. Peak Forward Current
`(300 us pulse width; 10msperiod)
`
`G:SiC Technology™
`Super Blue LED
`
`C430-DH290-E0200
`(%)
`RelativeIntensity
`
`
`Fig. 8 LED Mounting Conditions Used To
`Generate The Pulse Derating Curve
`
`20
`
`30
`
`40
`
`50
`
`60
`
`70
`
`80
`
`Forward Current (mA)
`
`0.062"
`
`—0
`
`.3"
`
`The LED was mounted on a 1/16" phenolic printed circuit board
`having | oz. Copper ribbon .080" wide. The distance from the
`bottom ofthe reflector cup to the top of the PCB was 0.3". The
`LEDleads were nickel-iron Alloy 42.
`
`Fig.9 Pulse Derating Curve
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 11 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 11 of 14
`
`

`

`oo. Pe ee ee
`
`Set 2 Le Se
`
`RESEARCHs+INC
`
`C430-DH290-E0200
`
`G:SiC Technology™
`Super Blue LED
`
`The Leaderin Silicon Carbide Solid State Technology
`
`
`
`RatioofPeakCurrenttoTemperatureDeratedDCCurrent
`
`10 kHz
`
`3 kHz
`
`1 kHz
`
`300 Hz
`
`100 Hz Refresh Rate
`
`
`
`TTTST
`HlINUAETTH
`
`
`CHOCINGING
`ENNTIN
`(3
`
`
`
`
`
`1.00E-06
`
`1.00E-05
`
`1.00E-04
`
`oS
`1.00E-03
`
`1.00E-02
`
`Pulse Width (Seconds)
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 12 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 12 of 14
`
`

`

`EPITAXIAL SPECIFICATIONS
`
`Substrate Orientation
`
`Off-Axis only
`
`Conductivity
`
`Dopant
`Net Doping Density
`Silicon Face
`Carbon Face
`
`5x 10° - 1x 10'%/cem?
`2x10" - 1x 10'%/cem?
`
`p-type
`
`Aluminum
`Na-No
`5x 10-1 x 10'%/cm®
`5x10" -2x 10"%/cm*
`
`Tolerance
`
`+a factor of 2
`
`+ a factor of 2
`
`Thickness Range {
`Silicon Face
`Carbon Face
`Tolerance
`
`0.10-10.0 microns
`0.10-7.0 microns
`+ 25% of selected thickness
`
`t Total thicknessof all epitaxial layers combined cannot exceed 10 microns for Silicon Face and 7
`microns for Carbon Face. Thickness (maximum or minimum) of any given epitaxial layer is
`dependent on doping level desired.
`
`Please contact our sales department about productavailability and pricing for items outside our standard ranges.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 13 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 13 of 14
`
`

`

`EPITAXIAL SPECIFICATIONS
`
`Substrate Orientation
`Conductivity
`Dopant
`
`Net Doping Density
`Silicon Face
`Carbon Face
`
`Tolerance
`
`Thickness Range {
`Silicon Face
`Carbon Face
`Tolerance
`
`Off-Axis only
`
`5x10" -1x10'/cm®
`2x10" - 1x 10cm?
`
`0.10-10.0 microns
`0.10-7.0 microns
`+ 25% of selected thickness
`
`p-type
`
`Aluminum
`
`Na-Np
`5x 10-1 x 10'%/cm®
`5x10" -2x10'%/cm®
`
`+a factor of 2
`
`t Total thicknessofall epitaxial layers combined cannot exceed 10 microns for Silicon Face and 7
`microns for Carbon Face. Thickness (maximum or minimum) of any given epitaxial layer is
`dependent on doping level desired.
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 14 of 14
`
`HAAG-STREIT AG - EXHIBIT 1021
`Page 14 of 14
`
`