`
`www.atchive.org
`415.561.6767
`415.840-0391 e-fax
`
`Internet Archive
`300 Funston Avenue
`
`San Francisco, CA 94118
`
`AFFIDAVIT OF CHRISTOPHER BUTLER
`
`1. I am the Office Managerat the Internet Archive, located in San Francisco,
`California. I make this declaration of my own personal knowledge.
`2. The Internet Archive is a website that provides accessto a digital library of
`Internet sites and other cultural artifacts in digital form. Like a paperlibrary, we provide
`free accessto researchers, historians, scholars, and the general public. The Internet
`Archive has partnered with and receives support from variousinstitutions, including the
`Library of Congress.
`3. The Internet Archive has created a service known as the Wayback Machine. The
`Wayback Machine makesit possible to surf more than 450 billion pages stored in the
`Internet Archive's web archive. Visitors to the Wayback Machine can search archives
`by URL(i.e., a website address). If archived records for a URL are available, the visitor
`will be presented with a list of available dates. The visitor may select one of those
`dates, and then begin surfing on an archived version of the Web. Thelinks on the
`archived files, when served by the Wayback Machine,point to other archivedfiles
`(whether HTMLpagesor images). If a visitor clicks on a link on an archived page, the
`Wayback Machinewill serve the archived file with the closest available date to the page
`upon whichthe link appeared and wasclicked.
`4. The archived data made viewable and browseable by the Wayback Machineis
`compiled using software programs knownas crawlers, which surf the Web and
`automatically store copies of webfiles, preserving thesefiles as they exist at the point of
`time of capture.
`5. The Internet Archive assigns a URL onitssite to the archivedfiles in the format
`http://web.archive.org/web/[Year in yyyy][Month in mm][Day in dd][Time codein
`hh:mm:ss]/[Archived URL]. Thus, the Internet Archive URL
`http://web.archive.org/web/19970126045828/http://www.archive.org/ would be the
`URLfor the record of the Internet Archive home page HTMLfile
`(http://www.archive.org/) archived on January 26, 1997 at 4:58 a.m. and 28 seconds
`(1997/01/26 at 04:58:28). A web browser maybeset such that a printout from it will
`display the URL of a web pageinthe printout’s footer. The date assigned by the Internet
`Archive applies to the HTMLfile but not to imagefiles linked therein. Thus images that
`appear on a page may not havebeenarchived on the same date as the HTMLfile.
`Likewise, if a website is designed with "frames," the date assigned by the Internet
`Archive applies to the frameset as a whole, and not the individual pages within each
`frame.
`6. Attached hereto as Exhibit A are true and accurate copies of printouts of the
`Internet Archive's records of the HTMLfiles or PDFfiles for the URLs and the dates
`specified in the footer of the printout (HTML)or attached coversheet (PDF).
`7.1 declare under penalty of perjury that the foregoingis true and correct.
`
`
`
`pare:9[4 [14 (h(Q_
`
`
`
`Christopher Butler
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 1 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 1 of 21
`
`

`

`CALIFORNIA JURAT
`
`See Attached Document.
`
`A notary public or other officer completing this
`certificate verifies only the identity of the
`individual who signed the document to which this
`certificate is attached, and not the truthfulness,
`
`accuracy, or validity of that document.
`
`State of California
`County of San Francisco
`
`Subscribed and sworn to (or affirmed) before me on
`this
`
`| day of
`
`Christopher Butler,
`
`proved to me onthe basis of satisfactory evidenceto be
`the person who appeared before me.
`
`KY
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 2 of 21
`
`orwy
`
`rrr
`
`qeYNN
`
`PO"!
`
`
`
` LAUREL KARR
`Notary Public - California
`
`San Francisco County
`: My Comm. Expires Nov 17, 2020
`Commission # 2172222
`
`
`d x
`
`=r
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 2 of 21
`
`

`

`Exhibit A
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 3 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 3 of 21
`
`

`

`9/3/2019
`
`Cree Research, Inc.
`
`Welcometo Cree Research, Inc.
`
`Links
`
`e About Cree
`e Products
`
`e What's New?
`e ShareholdersPage
`e Employment
`Opportunities
`e Real Color Displays
`e Cree Related
`
`More Information
`
`In addition to the information found on our website, you may request additional information, be added to/removed from our mailinglist,
`and/orbe contacted regarding special opportunities (e.g. exhibitions, conference calls) for more contact with our companyhere.
`
`Company Headquarters
`Cree Research, Inc.
`4600 Silicon Drive
`Durham, NC 27703
`(T) 919-361-5709
`(F) 919-474-0008
`
`Email
`
`CREE(blueleds@cree.com).
`
`Feedback
`
`Weat Cree Research,Inc. have designed our HomePageto be both informative and easy to use. We welcome your feedback on how we
`might improve our Internet presenceto serve you better. Email the webmaster (wade_brooks@cree.com) with your comments and
`suggestions.
`
`Tip
`
`
`Forbest results in viewing our Products information, we strongly recommendusing a browser which supportstables like Netscape
`Navigator or Microsoft Internet Explorer.
`
`
`Copyright © 1996, 1997, and 1998 Cree Research, Inc. All rights reserved.
`Cautionary Statement and Disclaimer
`
`Last updated: Tuesday, January 20, 1998
`
`https://webarchive.org/web/1998052404041O/http://www.cree.com/enhanced/index.htm
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page4 of 21
`
`ma
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 4 of 21
`
`

`

`9/3/2019
`
`Cree Research: Products
`
`i)
`e4
`
`Lae}
`
`7mI x
`
`»T
`
`wD
`
`i
`
`GY
`
`.(iam
`
`MY
`
`es)
`
`m
`
`Products
`
`Cree Research, Inc., is the world leader in the development, manufacturing and marketing of electronic
`devices made from Silicon Carbide (SiC), a semiconductor materialthat is superior to other semiconductor
`materials for certain applications. In addition, Cree manufactures the Real Color Module™ and markets
`full color LED displays through its wholly-owned subsidiary Real Color Displays.
`
`
`In addition to our product information found here, you may contact our marketing and sales department.
`
`=eeeSN"EE
`
`SiC Substrates and Epitaxy
`
`
`
`4H-SiCand6H-Si rates: Applications&Benefits
`
`SiC Thick Epitaxy
`
`50.8mm (2 inches) SiC Wafer
`Semi-insulating 4H-Silicon Carbide
`4H-Silicon Carbide: Properties & Specifications
`6H-Silicon Carbide: Properties & Specifications
`Cree's Latest Device Results
`
`
`
`Blue LED Chips
`
`e UPDATED Super Blue LED -C430-CB290-E0200-
`
`Real Color Displays
`
`https://web.archive.org/web/19980524040530/http://www.cree.com/enhanced/producre.htm
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 5 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 5 of 21
`
`

`

`Cree Research: Products
`
`9/3/2019
`
`
`
`e Our Series of Color Displays
`
`
`
`ABOUT|PRODUCTS|SHAREHOLDERS|WHATS|EMPLOYMENT|TECHNICAL|REAL COLOR
`
`
`
`CREE HEW?|OPPORTUNITIES)PAGE SUPPORT DISPLAYS
`
`
`About Cree | Products | Shareholder's Page | What'sNew?
`Employment Opportunities | Technical Support | Real Color Displays
`
`Copyright © 1997 Cree Research,Inc. All rights reserved.
`
`i
`https://web.archive.org/web/19980524040530/http://www.cree.com/enhanced/producre.htm
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 6 of 21
`
`2/2
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 6 of 21
`
`

`

`https://web.archive.org/web/19980524041036/http://www.cree.com/ftp/pub/Al
`|Specs.PDF
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page7 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 7 of 21
`
`

`

` a= 7+
`Se,
`
`R
`
`E
`
`Ss
`
`E
`
`A
`
`R
`
`c
`
`H
`
`|
`
`N
`
`Cc
`
`Properties and Specifications for
`SiC Thick Epitaxy
`
`Epitaxial Specifications:
`
`
`
`X4S|IC-B-N2E18S8X0
`X4SIC-B-N8E18S8X0
`
`
`
` Substrate Type
`
`
`X4SIC-B-N1E19S8X0
`
`C4SIC-D-N8E18S8R0
`
` Nitrogen
`
`
`EPI Thickness
`Typical Doping Density
` (typical)
`(Np - Na)
`
`
`2.5E + 15/em”
`20um
`
`1.5E + 15/cm?
`30um
`40yum
`1.0E + 15/em?
`9.0E + 14/cm?
`
`
`Notes: 1) Thickness (mean) + 10% (of typical spec)*
`2) Thickness uniformity (G/mean) 10%*
`3) Doping Tolerance + factor of 2*
`4) All wafers will be edge ground
`5) Available on abovelisted substrates only
`6) All layers will be preceded by a lym N+ buffer layer
`
`* Outer 3mm edge exclusion
`
`Please contact our sales departmentfor pricing, availability, and additionalepitaxial layers.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 8 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 8 of 21
`
`

`

`= 7
`ee,
`
`H
`
`|
`
`N
`
`Cc
`
`R
`
`E
`
`Ss
`
`E
`
`A
`
`R
`
`Cc
`
`Properties and Specifications for
`50.8mm (2 inches) SiC Wafer
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`4H
`
`6H
`
`Single Crystal
`Hexagonal
`3.26eV
`4.9 Wicm e K
`a=3.073A
`c= 10.053 A
`~9
`
`Single Crystal
`Hexagonal
`3.03eV
`4.9 Wicm ° K
`a=3.081A
`c=15.117A
`~9
`
`Diameter
`50.8mm (2 inches)
`Tolerance
`+ .75mm_(.030 inches)
`
`Thickness
`Tolerance
`
`Dopant
`n-type
`
`Orientation
`On-Axis
`
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`0.33 mm (0.013 inches)
`+ 0.13mm (.005 inches)
`
`Nitrogen
`
`6H {0001} + 0.5°
`
`4H 8° + 0.5° Off {0001} toward <112 0> + 10°
`
`Silicon face polished
`
`FLUOROWARE® Single Wafer Container
`
` Typical Resistivity
` Part Number
`
`
` C6SIC-D-N2E18S2RO|N|
` 42 mQ -cm
`20 mQ -cm
`|ON|2.00E+18/cm
`
`C4SIC-D-N8E18S8RO
`N
`8.00E + 18/cm
`
`
`Typical Doping
`Density
`n-type = Np-Na
`
`DOPING DENSITY TOLERANCE: =afactorof 2
`
`Note: These wafers available in Research Grade Only
`
`Please contact our sales department about productavailability andpricingfor items outside our standard ranges.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 9 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 9 of 21
`
`

`

`Applications and Benefits for Devices Fabricated From
`4H-SiC and 6H-SiC Substrates
`
`o> ALS “ya
`. See Co
`wWreabznm Wv
`RESEARCH.
`IN
`
`
`
`APPLICATIONS
`
`BENEFITS
`
`HIGH FREQUENCY POWER DEVICE (RECOMMENDED MATERIAL: 4H-SiC)
`
`Solid state phased array radar systems
`Communication Systems
`Solid state UHF broadcast sytems
`High frequency powersupplies
`Electronic countermeasures- jamming and threat
`warning systems
`
`Increase output powerof solid state RF devices by factor of 4
`°
`° Reduce system weight and volume
`° Operate in elevated temperature and high radiation environments
`° Reduce device cooling requirements
`° Offer power densities that are 4 times higher than Si or GaAs
`devices
`
`HIGH POWER DEVICES (RECOMMENDED MATERIAL: 4H-SiC)
`
`Powerelectronics for power generating systems
`Surge suppressors
`Powerconditioning for electric vehicles
`Electronic actuators
`
`Solid state lamp ballasts
`
`HIGH TEMPERATURE DEVICES
`
`Jet engine sensors, actuators and control electronics
`Spacecraft power conditioning electronics and sensors
`Transmitters for deep well drilling
`
`Industrial process measurementand control
`
`instrumentation
`
`Distributorless electronic ignitions
`
`Automotive engine sensors
`
`OPTOELECTRONIC DEVICES
`
`Full-color displays
`Full-color photographic slide scanners and film exposure systems
`
`Indicators for instrumentation and consumerelectronics
`
`Blood-oxygen analysis
`Air quality monitoring equipment
`
`Solid state flame detectors for combustion control
`UV dosimetry for industrial processes
`Incomingballistic missile detection and imagine
`
`II - V NITRIDE DEPOSITION
`
`Blue LEDs
`Bluelaser diodes
`
`MESFETs
`HEMTs
`
`Green LEDs
`
`UV Emitters
`
`° Lowervoltage drop for unipolar devices
`° Upto 100 times the powerdensity of Si devices
`°
`Increased numberof powerdevicesper unit area
`° Reduced size and weight of cooling systems
`° Excellenttransient characteristics including high switching speed
`andthe elimination oflarge reverse-recovery currents
`
`¢ Sensor output signal amplification at high temperatures
`¢ Reduceor eliminate need for cooling of engine electronics
`° Aircraft weight savings - sensor amplification at point of
`measurementeliminates need for heavy shielding conduit for small
`signal transmission
`° Reliable sensing and control in aggressive environments not
`currently served by solid-state electronics
`° Reducesize and weightofsatellites and space platforms by
`allowing electronics to operate at higher temperature
`¢
`Improveddevicereliability due to long term chemical and thermal
`stability at elevated temperatures
`
`¢ Highreliability
`¢ Blue LEDsused together with red and green LEDSs allow the
`production ofsolid state light of any color in the visible spectrum
`° Detectors operate at >350°C while maintaining excellentefficiency
`° Nearly solar blind detection (99% of the responseis in the UV range)
`° PN junction leakage currents 10° - 10° timesless than Si junctions
`for sensitivity up to 10,000 times greater than common Si based UV
`photodetectors
`¢ Lowdark current eliminates need for cryogenic cooling
`° UV spectroscopy
`
`* Close match oflattice parameters and coefficient
`¢ High thermal conductivity substrate offers greater power handling
`and improvedreliability.
`° Electrical conductivity allows vertical device structure
`* Best technological approach for short wavelength laser diodes, which
`significantly increase optical storage capacities
`¢ Electrical conductivity which ranges from insulating for microwave
`devices to conducting for LEDs andlaser diodes
`° HBTs
`HAAG-STREIT AG - EXHIBIT 1042
`Page 10 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 10 of 21
`
`

`

`CREE’S LATEST DEVICE RESULTS“
`
`High Power
`
`Schottky diodes
`
`4H-SiC npnp thyristors
`
`Field Control Thyristor
`
`4H-SiC Power MOSFETs
`
`High Frequency
`
`4H-SiC MESFETs
`
`blocking of 800V with 0.5 Amps of rated
`current
`reverse leakage current equal to 44nA at 700V
`
`blocking of 900V and on-current of 2.0 Amps
`700V, 6A with V; of 3.7V (1000 A/cm?)
`
`e 335V, 1A (525A/cm2), operation up to 500kHz
`e Operation up to 350°C
`
`block voltages up to 260V with specific on-
`resistance of 18 mcm?
`e block 890V with on current of 5mA
`175V, 2A (200A/cm?) with Vf of 2.65V
`
`fmax of SOGHz
`F, of 22GHz,
`e class A power densities of 3 W/mm at 1.8GHz
`e class B power densities of 2 W/mm with power added
`efficiencies of 66% and 50%at 850 MHz and 1.8GHz
`respectively
`15 Watts CW total at 2.1GHz, with power added
`efficiencies of 54%
`
`High Temperature
`
`MOSFETs
`
`MESFETs
`
`operated up to 350°C
`
`operated up to 500°C
`
`buried gate JFETs
`
`operated up to 500°C
`
`4H-SiC npnp thyristors
`
`operated up to 500°C
`
`BJTs
`
`PMOS circuits
`
`operated up to 400°C
`
`operated up to 400°C
`
`NMOS enhancement-mode
`ring oscillators
`
`e operated to 350°C
`e 17 stage with gate delays of 15 nsec at RT
`
`CMOS operational amplifiers
`
`e open loop gain ~10,000 at RT
`e input offset voltage < 100mV at RT
`
`OptoElectronics
`
`Blue Laser Diode
`
`*Devices not commercially available
`
`GaN on SiC with cleaved facets
`423 nm emission, CW operation for >15 seconds @ RT
`
`08/15/97
`HAAG-STREIT AG - EXHIBIT 1042
`Page 11 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 11 of 21
`
`

`

`iene sa
`oC a ol a
`wWhtmm Vv
`R ES EA RCH.
`IN C
`
`Properties and Specifications for
`Semi-insulating
`4H-Silicon Carbide
`
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Single Crystal 4H
`Hexagonal
`3.26 eV
`4.9 Wicm e K
`a= 3.073
`c = 10.053
`
`Mohs Hardness
`
`~9
`
`SUBSTRATESPECIFICATIONS
`
`Diameter
`Tolerance
`Thickness
`Tolerance
`Conductivity Type
`Resistivity
`Orientation
`
`Off-axis
`Flat Orientation
`Surface Treatment
`
`Package
`
`EPITAXIAL SPECIFICATIONS
`
`34.9 mm (1.375 inches)
`+ 0.5 mm0.020 inches)
`0.33 mm (0.013 inches)
`+ 0.13 mm (0.005 inches)
`semi-insulating
`>= 1E5 ohm-cm
`
`8° off-axis + 0.5° Off {0001} toward <112 O> + 10°
`4101 0} + 10°
`Silicon face polished
`Polish damage removedonsilicon face
`FLUOROWARE®Single Wafer Container
`
`5 x 10" -1 x 10'%/cm® [(ND-Na)or (NA-Np)] Net Doping Density
`
` Tolerance
`
`
`+ a factor of 2
`0.10 - 10.0 microns
`+ 25% of selected thickness
`
`Thickness Range
`Tolerance
`
`
`
`
`
`
`
`
`Physical properties for n-type 4H SiC as reported in Landolt-Bornstein: Semiconductors:
`Physics of Group IV and III-V Compounds, Vol. 17, 1982.
`
`§ Total thicknessof all epitaxial layers combined cannot exceed 10 microns.
`t Thickness (maximum or minimum)of any given epitaxial layer is dependent on doping level
`desired.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 12 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 12 of 21
`
`

`

`Tl /
`
`oO
`
`=x
`
`.“
`
`ll ll
`
`} T'l
`‘ ‘|
`
`4
`
`Properties and Specifications for
`4H-Silicon Carbide
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`Diameter
`Tolerance
`
`Thickness
`Tolerance
`
`Dopant
`n-type
`p-type
`
`Orientation
`
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`Single Crystal 4H
`Hexagonal
`3.26 eV
`4.9 Wicm °K
`a=3.073A
`c= 10.053A
`~9
`
`34.9mm (1.375 inches)
`+ 0.5 mm (0.020 inches)
`
`0.33 mm (0.013 inches)
`+ 0.13 mm (0.005 inches)
`
`Nitrogen
`Aluminum
`
`8° + 0.5° Off {0001} toward <112 0> + 10°
`{101 0} + 10°
`Silicon or Carbon face polished as specified
`Polish damage removed on specified face
`FLUOROWARE:®Single Wafer Container
`
`STANDARD MICROPIPE DENSITY
`
`Micropipe Density
`Part Number Typical Doping Density|Typical Resistivity
`n-type = Np-Na
`
`S4SIC-B-NBE18S8X0|on|8°off|30-100 micropipes/cm* 8.00E#18/om
`
`S4SIC-B-N1E19S8X0|n_|8°off|30-100 micropipes/cm
`
`
`>1.00E+19*/em
`
`
`
`Part Number
`
`i
`
`i
`
`
`L4SIC-B-N8E18S8X0 aa <30 micropipes/om
`8.00E+18/cm
` .020 Q -cm
`
`L4SIC-B-NIET9S8x0|_n_|8°off|<30micropipesiom”|__>1.00E+19%/cm
`<.0175 Q-cm
`
`
`DOPING DENSITY TOLERANCE: = a factor of 2
`
`NOTE: Unless otherwise designated, all parts available in research or production grade.
`
`Please contact our sales department about productavailability and pricing for items outside our standard
`ranges.
`
`Rev. 0797
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 13 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 13 of 21
`
`

`

`ae eee = La
`.a—» = me ee
`
`R
`
`E
`
`Ss
`
`E
`
`A
`
`R
`
`Cc
`
`H
`
`
`
`|
`
`N
`
`ic
`
`Properties and Specifications for
`6H-Silicon Carbide
`
`
`PHYSICAL PROPERTIES
`
`Polytype
`Crystal Structure
`Bandgap
`Thermal Conductivity
`Lattice Parameters
`
`Mohs Hardness
`
`SUBSTRATE SPECIFICATIONS
`
`Single Crystal 6H
`Hexagonal
`3.03 eV
`4.9 Wicm ¢ K
`a=3.081A
`c=15.117A
`~9
`
`Diameter
`
`Tolerance
`
`Thickness
`Tolerance
`Dopant
`n-type
`p-type
`
`Orientation
`On-Axis
`
`Off-Axis
`
`Flat Orientation
`Surface Treatment
`
`Package
`
`B Size = 34.9mm (1.375 inches)
`C Size = 41.3 mm (1.625 inches)
`+ 0.5 mm (0.020 inches)
`
`0.33 mm (0.013 inches)
`+ 0.13 mm (0.005 inches)
`
`Nitrogen
`Aluminum
`
`{0001} + 0.5°
`
`3.5° + 0.5° Off {0001} toward <112 0> + 10°
`{101 0} + 10°
`Silicon or Carbon face polished as specified
`Polish damage removed onspecified face
`FLUOROWARE® Single Wafer Container
`
`Part Number
`
`
`Typical Doping
`Density
`
`Pe No-Na
`
`p-type = Na-N
`COSICBNBETISIXO| |SSO|_800EFTTIam*
`
`
`.102 Q-cm
`
`
`Os
`C6SIC-B-N2E18S1X0
`062 Q-cm
`
`
`COSICBNGETESIXO| —n_[SSToR|AGOEFTBEnT
`042 Q-cm
`COSIG-C-NZETESOXO ii|eaeC6SIC-B-P2E18S1X0
`
`
`.062 Q-cm
`
`
`3.5° off
`2.00E+18/cm*
`3.329 Q-cm
`DOPING DENSITY TOLERANCE:
`+ a factor of 2
`
`Typical Resistivity
`
`NOTE: Unless otherwise designated, all parts available in research or production grade.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 14 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 14 of 21
`
`

`

`) |
`
`iT:
`Iy Iall
`
`a m wo m & a
`
`a a
`
`»
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`| N C
`
`The Leaderin Silicon Carbide Solid State Technology
`
`
`
`
`GSiC Technology™
`Super Blue LED
`C430-DH290-E0200
`
`
`
`Features
`High Performance — ’7504”W
`
`Ap
`
`plications
`Full Color Displays & Moving Message Signs
`
`Superior SiC Substrate Technology
`
`Solid State Incandescent Replacement Bulbs
`
`430 nm Peak Wavelength
`
`High AmbientPanelIndicators
`
`Excellent Chip to Chip Consistency
`
`Color Printers & Scanners
`
`High Reliability
`
`Medical & Analytical Instruments
`
`Description
`
`Cree’s Super blue LEDsare a new generation of solid-state blue LED emitters which combine highly
`efficient GaN with Cree’s proprietary SiC substrate to deliver the ultimate price/performance for high
`intensity blue LEDs. The C430-DH290-E0200is designed for use in high ambientlight conditions
`with a typical output of 750 vW and a 430 nm peak wavelength (at 20 mA).
`
`C430-DH290-E0200 Chip Diagram
`
`Topside View
`
`Die Cross Section
`
`Anode (+)
`
`t= 10 mils GaN
` SiC Substrate Backside
`
`Metallization
`
`Cathode(-)
`
`4X4 mils
`
`G*SiC LED Chip
`10.4 X 10.4 mils
`
`Mesa (junction)
`8 X 8 mils
`
`Gold Bond Pad
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 15 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 15 of 21
`
`

`

`G:SiC Technology™
`Super Blue LED
`
`C430-DH290-E0200
`
`Maximum Ratings at T, = 25°C
`
`DC Forward Current °™
`Peak Forward Current (1/10 duty cycle @ 1kHz) ona
`LED Junction Temperature ***
`Reverse Voltage
`Operating Temperature Range
`Storage Temperature Range
`Electrostatic Discharge Threshold (HBM) 2
`
`C430-DH290-E0200
`25 mA
`70 mA
`125°C
`SV
`-20°C to +80°C
`-30°C to +100°C
`200 V
`
`Electrical/Optical Characteristics at T, = 25°C
`C430-DH290-E0200
`If = 20 mA
`Max.
`Typ.
`Min.
`Description
`Symbol(units)
`4.5
`3.8
`—
`Forward Voltage oe
`Ve(V)
`—_
`750
`500
`Radiant Flux “°°
`P uW)
`10
`—
`—
`Reverse Current (Vr = 5V)
`I WA)
`—
`100
`—
`Luminous Intensity oe
`I, (med)
`430
`—
`424
`Peak Wavelength “°“
`Ap (nm)
`468
`——
`462
`Dominant Wavelength °°
`Ag (nm
`
`
`
`Aa(nmm)DominantWavelength"462
`A (nm)
`Halfwidth
`—
`65
`—
`tT
`(ns
`Optical Rise Time
`—
`30
`es
`
`Mechanical Specifications
`
`Description
`P-N Junction Area (um)
`Bottom Area (um)
`Chip Thickness (um)
`Au BondPad Area (um)
`Au Bond Pad Thickness (wm)
`Back Contact Grid Spacing (um)
`Back Contact Metal Width (um)
`
`C430-DH290-E0200
`Dimension
`200 x 200
`260 x260
`250
`100 x 100
`1.1
`140
`15
`
`Tolerance
`+25
`+25
`+25
`+ 20
`+ 0.5
`+15
`+10
`
`2.
`
`Notes:
`1. Maximumratings are package dependent. The forward currents (DC and Peak) are by the effect of the LED junction temperature on
`the package. Please refer to figures 5 and 9 for specific derating curves.
`The junction temperature limit of 125°C is nota limit of the G *SiC die, but a limit of the T-1 34 package used for characterization.
`Junction temperature should be characterized in a specific package to determine limitations. In general the junction temperature is a
`function of the lead frame material. Cree only guarantees the above maximumratings. Cree recommends a maximum assembly
`processing temperature of 200°C.
`3. Cree guarantees minimum and maximumspecifications. All measurements are based on Cree's T-1 %4 lamps whichare built from
`samples of die from each wafer as measured in a Photoresearch Spectrascan Integrating Sphere.
`This measurement is based on Cree's T-1 34
`lamp with a 30°C viewing angle.
`Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
`The RAETprocedures are designed to approximate the ESD threshold ratings shown. Seller gives no other assurances regarding the
`ability of the products to withstand ESD.
`The efficiency of these chips decreases at higher currents, please refer to Fig 3 and 7 for specific efficiency curves based on Cree’s
`T-1 %4 lamps using Hysol OS4000 epoxy.
`
`4.
`5.
`
`6.
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 16 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 16 of 21
`
`

`

`“y
`
`Il Ml
`
`Il
`
`
`
`ITI ITIBill gil S
`
`4 m A m i a a =x
`
`»
`
`| NC
`
`The Leaderin Silicon Carbide Solid State Technology
`
`Fig.1
`
`Forward Voltage vs. Forward Current
`
`—toA°S
`
`
`
`
`
`ForwardCurrent(mADC) oS
`
`Fig.2 Relative Intensity vs. Wavelength
`
`G:SiC Technology™
`Super Blue LED
`C430-DH290-E0200
`
`
`
`
`(%)
`RelativeIntensity
`
`
`1
`
`2
`
`3
`
`4
`
`5
`
`390 440 490 540 590 640
`
`Forward Voltage (V)
`
`Wavelength (nm)
`
`Fig.3 Relative Intensity vs. Forward Current
`
`125
`
`=aAnxf¢GoNTNOS
`
`(%) NNn So
`RelativeIntenity
`
`
`0
`
`5
`
`10
`
`15
`
`20 25
`
`30
`
`Forward Current (mA DC)
`
`Fig.4 Relative Intensity vs. Lead Temperature
`(Pulsed 20 mA; 300ys pulse, 10ms period)
`
`10
`
`Intensity So —
`Relative
`
`0
`
`25
`
`50
`
`75
`
`100
`
`Lead Temperature (°C)
`
`Fig.5
`
`Forward Current vs. Ambient Temperature
`
`Fig.6
`
`Peak Forward Voltage vs. Forward Current
`(100s test pulse, 1% duty cycle)
`
`(mADC)
`ForwardCurrent
`
`
`0
`
`25
`
`50
`
`75
`
`100
`
`Ambient Temperature (°C)
`
`Rev: 0997
`
`— >o
`
`~]Nn
`
`
`
`
`
`ForwardCurrent(mA) NNnao
`
`1
`
`2
`
`3
`
`4
`
`3
`
`6
`
`Forward Voltage (V)
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 17 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 17 of 21
`
`

`

`Fig.7 Relative Intensity vs. Peak Forward Current
`(300 ys pulse width; 10msperiod)
`
`G:SiC Technology™
`Super Blue LED
`
`C430-DH290-E0200
`(%)
`RelativeIntensity
`
`
`Fig. 8 LED Mounting Conditions Used To
`Generate The Pulse Derating Curve
`
`20
`
`30
`
`40
`
`50
`
`60
`
`70
`
`80
`
`Forward Current (mA)
`
`Tt
`0.3"
`
`0.062"
`
`The LED was mounted on a 1/16" phenolic printed circuit board
`having 1 oz. Copper ribbon .080" wide. The distance from the
`bottom of the reflector cup to the top of the PCB was 0.3". The
`LEDleads were nickel-iron Alloy 42.
`
`Fig.9 Pulse Derating Curve
`
`Rey: 0997
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 18 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 18 of 21
`
`

`

`iT
`
`}
`
`‘ gl 1Ttm
`il Tl
`Tl
`
`a m cA m b> a a x=
`
`»
`
`[NC
`
`The Leaderin Silicon Carbide Solid State Technology
`
`
`
`GSiC Technology™
`Super Blue LED
`C430-DH290-E0200
`
`
`
`1 kHz
`
`300 Hz
`
`100 Hz Refresh Rate
`
`CurrenttoTemperatureDeratedDCCurrent
`
`10 kHz
`
`3 kHz
`
`
`RatioofPeak
`
`1.00E-06
`
`1.00E-05
`
`1.00E-04
`Pulse Width (Seconds)
`
`1.00E-03
`
`1.00E-02
`
`Rev: 0997
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 19 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 19 of 21
`
`

`

`EPITAXIAL SPECIFICATIONS
`
`Substrate Orientation
`
`Off-Axis only
`
`Conductivity
`Dopant
`Net Doping Density
`Silicon Face
`Carbon Face
`Tolerance
`
`Thickness Range t
`Silicon Face
`Carbon Face
`Tolerance
`
`5x10" -1x10'%/cm?
`2x 10'° - 1x 10'°%/cm?
`
`0.10-10.0 microns
`0.10-7.0 microns
`+ 25% of selected thickness
`
`p-type
`
`Aluminum
`Na-Np
`5x10" -1 x 10"%/cm®
`5x 10"° -2x 10"/cm?®
`+ a factor of 2
`
`T Total thicknessof all epitaxial layers combined cannot exceed 10 micronsfor Silicon Face and 7
`microns for Carbon Face. Thickness (maximum or minimum) of any given epitaxial layer is
`dependenton dopinglevel desired.
`
`Please contact our sales department about product availability and pricingfor items outside our standard ranges.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 20 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 20 of 21
`
`

`

`EPITAXIAL SPECIFICATIONS
`
`Substrate Orientation
`Off-Axis only
`Conductivity|type p-type
`Dopant
`Aluminum
`Net Doping Density
`Na-Np
`Silicon Face
`5x10°-1x 10'%/cm?®
`Carbon Face
`5x 10° -2x 10"%/cm®
`Tolerance
`+ a factor of 2
`
`Thickness Range t
`Silicon Face
`Carbon Face
`Tolerance
`
`0.10-10.0 microns
`0.10-7.0 microns
`+ 25% of selected thickness
`
`tT Total thicknessofall epitaxial layers combined cannot exceed 10 micronsfor Silicon Face and 7
`microns for Carbon Face. Thickness (maximum or minimum) of any given epitaxial layeris
`dependenton doping level desired.
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 21 of 21
`
`HAAG-STREIT AG - EXHIBIT 1042
`Page 21 of 21
`
`