; JAPANESE JOURNAL OF
`
`L APPLIED PHYSICS
`
`Abbott
`Exhibit 1008
`Page 001
`
`

`

`Japanese Journal of Applied Physics ass»: 00214922)
`
`PUBLICATION BOARD (April l998—March 1999)
`Chiarman
`Iwao OHDOMARI
`Vice chairman
`Noboru MIURA
`EditorsrineChief
`Shin—ichi UCHIDA, Michio TAJIMA
`Tieas'urers
`Kunio TAKAYANAGI, Tsunenori SAKAMOTO
`
`Secretaries
`Pub/((1?) lion
`managers
`Supervisors
`
`Hidetoshi FUKUYAMA, Katsuaki SATO
`
`Toshio GOTO, Shigeki MITAKU
`Yoshikazu TOYAMA, Hiroshi KAMIMURA
`
`EDITORIAL BOARD (April 1998—March 1999)
`Editors-in-Chief
`
`Shin-ichi UCHIDA (Dept. of Superconduct., Univ. of Tokyo)
`
`Michio TAJIMA (Inst. of Space & Astronaut. Sci.)
`
`Co., Ltd.)
`S. KOMATSU (Waseda Univ.)
`M. KOMURO (Electrotcch. Lab.)
`A. NODA (Kyoto Univ.)
`
`Y. TAGUCHI (Chuo Univ.)
`0. UEDA (Fujitsu Labs. Ltd.)
`K. YAMABE (Univ. of Tsukuba)
`H. YOKOYAMA (Electrotech. Lab.)
`
`H. SASADA (Keio Univ.)
`K. SA'I‘O (Tokyo Univ. of Agric. & Technol.)
`M. SA'I‘O (New Japan Radio Co., Ltd.)
`S. SATO (Akita Univ.)
`K. SERA (NEC Corp.)
`T. SUGINO (Osaka Univ.)
`K. SUGURO (Toshiba Corp.)
`T. TAKAHASHI (Univ. of Tokyo)
`H. TAKEZOE (Tokyo Inst. of Technol.)
`S. TANAKA (Tottori Univ.)
`Y. TAZUKE (Ibaraki Univ.)
`K. TENJIMBAYASHI (Mech. Eng. Lab.)
`1. TERASAKI (Waseda Univ.)
`T. TSUCHIYA (Shimane Univ.)
`S. TSUDA (Sanyo Electr. Co., Ltd.)
`T. TSUKADA (ANELVA Corp.)
`T. TSUKAMOTO (Sci. Univ. of Tokyo)
`T. TSURUMI (Tokyo Inst. of Technol.)
`T. TSUTSUI (Kyusyu Univ.)
`K. UENO (NEC Corp.)
`T. UENO (Hitachi Ltd.)
`A. YAMADA (Tokyo Inst. of Technol.)
`S.
`YAMADA (JAIST)
`. YAMAMOTO (NTT System Electro. LabS-)
`. YAMAMOTO (Oasaka Univ.)
`YAMASHITA (Toshiba Corp.)
`. YOSHIMOTO (Tokyo Inst. of Technol.)
`. YOSHIMURA (Toyota Univ. of TechnoL)
`. YOSHINO (Tokyo Inst. of Technol.)
`. ZAIMA (Nagoya Univ.)
`
`.M MJ S
`
`MMY
`
`H. MATUDA (Natl. Inst. of Mater. &
`Chem. Res.)
`S. MATUMOTO (Keio Univ.)
`K. MIDORIKAWA (Inst. of Phys. &
`Chem. Res.)
`S. MIWA (Sony Corp.)
`S. MIYAZAKI (Hiroshima Univ.)
`J. MlZUKI (Jpn. At. Energy Res. Inst.)
`T. MOCHIZUKI (Himeji Inst. of Technol.)
`J. MUROTA (Tohoku Univ.)
`S. Muro (Hokkaido Univ.)
`M. NAI'I‘O (Hitachi Ltd.)
`M. NAITO (NTT Basic Res. Labs.)
`K. NAKAMURA (Tohoku Univ.)
`T. NISHI (Univ. of Tokyo)
`S. NlTTA (Gifu Univ.)
`S. ODA (Tokyo Inst. of Technol.)
`Y. OGAWA (Univ. of Tokyo)
`M. OHKURA (Hitachi Ltd.)
`S. OKAMOTO (NHK Sci. & Tech. Res. Labs.)
`K. ONABE (Univ. of Tokyo)
`J. OSAKA (NTT System Electr. Labs.)
`Y. OTANI (Tohoku Univ.)
`M. OZAKI (Osaka Univ.)
`M. OZEKI (Joint Res. Cent. for At. Technol.)
`K. SAIKI (Univ. of Tokyo)
`S. SAKAI (Tokushima Univ.)
`I. SAKATA (Electrotech. Lab.)
`K. SAKUTA (Osaka Univ.)
`S. SAMUKAWA (NEC Corp.)
`
`Head Editors
`Y. AOYAGI (Inst. of Phys. & Chem. Res.)
`H. AWANO (Hitachi Maxell Ltd.)
`T. FUJIMOTO (Kyoto Univ.)
`K. HIRAMATU (Mie Univ.)
`S. KAWASHIMA (Matsushita Electr. Ind.
`
`Associate Editors
`M. ADACHI (Toyama Prefect. Univ.)
`Y. AMEMIYA (Hokkaido Univ.)
`S. ARAI (Tokyo Inst. of Technol.)
`M. ASADA (Tokyo Inst. of Technol.)
`A. CHIBA (Waseda Univ.)
`Y. CHO (Tohoku Univ.)
`S. FUJITA (Kyoto Univ.)
`J. HANNA (Tokyo Inst. of Technol.)
`M. HARA (Inst. of Phys. & Chem. Res.)
`F. HASEGAWA (Univ. of Tsukuba)
`T. HASHIZUME (Hitachi Ltd.)
`K. HIRAKAWA (Univ. of Tokyo)
`H. HIRAYAMA (Tokyo Inst. of Technol.)
`Y. HIRAYAMA (NTT Basic Res. Labs.)
`T. HORIUCHI (Tokyo Denki Univ.)
`K. ISHII (Nagoya Univ.)
`H. ITO (Tohoku Univ.)
`S. KAI (Kyusyu Univ.)
`T. KAINO (Tohoku Univ.)
`H. KANBE (Kochi Univ. of Technol.)
`Y. KAWATA (Shizuoka Univ.)
`K. KIKUTA (NEC Corp.)
`K. KISI—IINO (Sophia Univ.)
`A. KONO (Nagoya Univ.)
`T. KUROSAWA (Natl. Res. Lab. of
`Metrology)
`K. MACHIDA (NTT System Electr. Labs.)
`S. MATSUI (Himeji Inst. of Technol.)
`Y. MATSUI (Assoc. of Super-Adv. Electron.
`Technol.)
`
`Overseas Editors
`
`J. C. Dainty (Imperial Coll. Sci., Technol. & Medici., UK) E. Jaeschke (BESSY 11, Germany)
`C. Lodder (Univ. of Twente, The Netherlands)
`J. Melngailis (Univ. of Maryland, USA)
`J. S. Patel (The Pennsylvania State Univ., USA) E. Rachlew-Kaellne (Royal Inst. Techo]., Sweden)
`L. Samuelson (Lund Univ., Sweden) K. Uchino (The Pennsylvania State Univ., USA) K. Wada (MIT, USA)
`
`Published by
`
`Publication Office, Japanese Journal of Applied Physics
`Daini-Toyokaiji Building, 24-8 Shinbashi 4-chome, Minatu-ku, Tokyo 105-0004, Japan
`
`Copyright (C) 1998 Publication Board, Japanese Journal of Applied Physics. All rights reserved.
`
`This publication is partially supported by a Grant—in—Aid for Publication of Scientific Research Result from the Ministry of Educa-
`tion, Science, Sports and Culture.
`
`Articles in this journal will be indexed and abstracted in electronic form at JJAP Online (http://wwwsoc.nacsis.ac.jp/jjap), CA
`Plus, CoDAS Web, INSPEC, PASCAL and SPIN. They are also available in printed form in Abstr. Sci. & Techno]. Jpn., CW"
`bridge Sci. Abst., Ceram. Absin, Chem Abstr., Curr. Cont., INIS Atomindex, Met. Abstr., MSCI, Sci. Abstr. and others.
`
`
`
`Abbott
`Exhibit 1008
`
`Page 002
`
`Abbott
`Exhibit 1008
`Page 002
`
`

`

`
`
`JAPANESE JOURNAL OF
`APPLIED PHYSICS
`
`(Pcm‘ 1 Regular Papers, Short Notes & Review Papers)
`
`Special Issue
`CONTENTS: Microprocesses & Nanotechnology
`FOREWORD
`
`vii
`
`VOL. 37 NO. 123
`
`December 1998
`
`
`
`Optical and EUV Lithography
`Process Technology for Next Generation Photomask (Review Paper)
`
`6669
`
`Mask Patterning Challenges Beyond 150 nm
`Optical Proximity Correction Methodology to Counteract Mask
`Error Effects in Sub-0.25 flm Lithography Generations
`Lithography Computer Aided Design Technology for Embedded
`Memory in Logic
`Reticle Critical Dimension Latitude for Fabrication of 0.18 pm Line
`Patterns
`
`Pattern Displacement Error under Off Axis Illumination
`
`Quantitative Measurement of the Ray Shift Aspect of Coma Aberra-
`tion Utilizing Electrical Probe with Zero—Crossing Method
`Determination of the Critical Dimension and Proximity Bias Varia—
`tions Across the Lens Field by Electrical Linewidth Measure-
`merits
`Measurement Method for Odd Component of Aberration Function
`Utilizing Alternating Phase Shift Mask
`0.12 pm Optical Lithography Performances Using an Alternating
`Deep UV Phase Shift Mask
`Proposal for the Coma Aberration Dependent Overlay Error Com-
`pensation Technology
`
`Challenges to 0.1 pm Resolution Capability in ArF Single Layer
`_ Resist Process with Weak Resolution Enhancement Techniques
`Study of the Bottom Antireflective Coating Process Using a High—
`Transparency Resist for ArF Excimer Laser Lithography
`Sub—0.1—um—Pattern Fabrication Using a l93-nm Top Surface Imag-
`ing (TSI) Process
`
`Printing Sub—100 Nanometer Features Near-field Photolithography
`
`Subwavelength Pattern Transfer by Near-Field Photolithography
`Ring—Field Extreme Ultraviolet Exposure System Using Aspherical
`Mirrors
`
`EleCtron and Ion Beam Lithography
`Charge—reducing Efl‘ect of Chemically Amplified Resist in Electron-
`Beam Lithography
`to the Electron Beam
`Application of a New Empirical Model
`Lithography Process with Chemically Amplified Resists
`Proximity Effect Correction by Pattern Modified Stencil Mask in
`Large-Field Projection Electron-Beam Lithography
`A New Approach of E-beam Proximity Eflect Correction for High-
`Resolution Applications
`High-Speed Convolution System for Real—Time Proximity Effect
`Correction
`
`a
`Sub—IO-nm Electron Beam Lithography Using
`methylstyrene) Resist with a Molecular Weight of 650
`Sub-lO-nm Overlay Accuracy in Electron Beam Lithography for
`Nanometer-Scale Device Fabrication
`Sub-0.1/1m Patterning Characteristics of Inorganic Thin Films by
`anmprlJnn,Dpnm I ithnnrnnhu
`
`Poly(a-
`
`6675
`6681
`
`6686
`
`6689
`
`6695
`
`6698
`
`6703
`
`6709
`
`6714
`
`6718
`
`6723
`
`6729
`
`6734
`
`6739
`
`6745
`6750
`
`6756
`
`6761
`
`6767
`
`6774
`
`6779
`
`6785
`
`6788
`
`6792
`
`John
`
`LILYGREN
`
`and
`
`Sriram
`
`Jung-Min SOHN, Byung-Gook KIM, Sung-Woon
`CHOI,
`Jin-Min KIM, Byung-Cheol CHA and
`Hee—Sun YOON
`Mark GESLEY
`Keeho KIM,
`MADHAVAN
`Hidetoshi OHNUMA, Keisuke TSUDAKA, Hiroichi
`KAWAHIRA and Satoru NOZAWA
`Seiji MATSUURA, Takayuki UCHIYAMA, Masashi
`FUJIMOTO, Tamio YAMAZAKI, Takeo HASHIMOTO
`and Kunihiko KASAMA
`Nakgeuon SEONG, Hoyoung KANG, Jongwook
`KYE, Hanku CHO and Jootae MOON
`Shuji NAKAO, Kouichirou TSUJITA and Wataru
`WAKAMIYA
`Olivier TOUBLAN, Daniel BOUTIN and Patrick
`SCHIAVONE
`
`Junji MIYAZAKI, Kouichirou
`Shuji NAKAO,
`TSUJITA and Wataru WAKAMIYA
`Yoriek TROUILLER, Nicolas BUFFET, Thierry
`MOURIER, Patrick SCHIAVONE and Yves QUERE
`Naoko ASAI, Norio HASEGAWA, Yasuko GOTOH,
`Hidetoshi SATOH, Katsuya HAYANO, Akira IMAI
`and Shinji OKAZAKI
`Makoto TAKAHASHI, Shinji KISHIMURA, Takeshi
`OHFUJI and Masaru SASAGO
`Shinji KISHIMURA, Makoto TAKAHASHI, Takeshi
`OHFUJI and Masaru SASAGO
`Taku
`KUHARA,
`Shigeyasu MORI,
`Koichi
`MORISAWA, Nobuyuki MATSUZAWA, Yuko
`KAIMOTO, Masayuki ENDO, Takahiro MATSUO and
`Masaru SASAGO
`NAKAO,
`Shuji
`TANAKA, Masayuki
`HATAMURA, Masanori
`KOMURO,
`HIROSHIMA and Masahiro HATAKEYAMA
`Takahiro ONO and Masayoshi ESASHI
`Katsuhiko MURAKAMI, Tetsuya OSHINO, Hiroo
`KINOSHITA, Takeo WATANABE, Masato NIIBE,
`Masaaki 1T0, Hiroaki OIZUMI and Hiromasa
`YAMANASHI
`
`Yotaro
`Hiroshi
`
`Tetsuro NAKASUGI, Shunko MAGOSHI, Kazuyoshi
`SUGIHARA, Satoshi SAITO and Naoko KIHARA
`Young-Meg HAM, Ki-Ho BAIK, Won-Gyu LEE,
`Tack Dong CHUNG and Kukjin CHUN
`Hideo KOBINATA, Hiroshi YAMASHITA, Eiichi
`NOMURA, Ken NAKAJlMA and Yukinori KUROKI
`Michal SIMECEK, Anja ROSENBUSCH, Tsuneaki
`OHTA and Hideyuki JINBO
`Takashi
`ISHIMURA,
`Susumu
`0001, Takiji
`KAMIKUBO, Mitsuko SHIMIZU, Yoshiaki HATTORI,
`Tomohiro IIJIMA, Hirohito ANZE, Takayuki ABE,
`Toru T010 and Tadahiro TAKIGAWA
`Shoko MANAKO,
`Jun-ichi
`FUJITA, Katsumi
`TANIGAKI, Yukinori OCHIAI and Eiichi NOMURA
`Kenji YAMAZAKI, Akira
`FUJIWARA, Yasuo
`TAKAHASHI, Hideo NAMATSU and Kenji KURIHARA
`Hyun-Yong LEE, Seung»Woo PAEK and Hong-Bay
`(‘Hrmn
`
`Abbott
`Exhibit 1008
`
`Page 003
`
`
`
`Abbott
`Exhibit 1008
`Page 003
`
`

`

`Study of :S':
`Silicon
`Chemical
`
`The Effect _
`The Opti
`
`
`
`
`
`Beam ln
`Effects Of
`tion I
`Defect vs.
`Laye
`
`il
`
`Thin Fil
`
`-
`
`l
`
`
`
`1
`I
`
`‘
`
`l l l l l
`
`ll
`
`6797
`
`6799
`
`6804
`
`6808
`
`6813
`
`6819
`
`6824
`
`6830
`
`6836
`
`6841
`
`6845
`
`6851
`
`6855
`
`6863
`
`6869
`
`6873
`
`6877
`
`Energy Distribution of Field Emitted Charged Particles during Beam
`Propagation (Short Note)
`X-Ray, Lithography
`Evaluation of Image Shortening for Rectangular Array Patterns in
`X-Ray Lithography
`
`Thermal Distortion of an X—Ray Mask for Synchrotron Radiation
`Lithography
`Mask Contamination Induced by X—Ray Exposure
`
`Impact of Metallization Films on Scattered-Light Alignment for X-
`Ray Lithography
`Highly Anisotropic Etching of Tungsten—Nitride for an X-Ray Mask
`Absorber with an Inductively Coupled Plasma System
`Characterization of Proximity Correction in IOO—nm-Regime X-Ray
`Lithography
`Dissolution Characteristics and Surface Morphology of Chemically
`Amplified Resists in X-Ray Lithography
`Reduction Of Image Shortening in Two~Dimensional Pattern Replica-
`tion Using X—Ray Lithography
`High Transmittance SiC Membrane Prepared by Electron Cyclotron
`Resonance Plasma Chemical Vapor Deposition in Combination
`with Rapid Thermal Annealing
`Design of Beamline Optics for Large-Field Exposure
`
`Dynamic Response of Acoustic Delay Line for Beam Lines of Syn—
`chrotron Radiation Lithography System
`Resists and Processes
`
`Simple Method for Resist Critical Dimension Prediction
`
`Implementation of Sub-150 nm Contact Hole Pattern by Resist Flow
`Process
`
`Synthesis Of Silicon—Containing Photoresists for ArF Excimer Laser
`Lithography
`
`Silylation and Dry Development of Chemically Amplified Resists
`SAL601, AZPN114, and Epoxidised Resist (EPR) for High Reso-
`lution Electron-Beam Lithography
`Photoresist Exposure Parameter Extraction from Refractive Index
`Change during Exposure
`
`Development Process for Chemically Amplified Resist by KrF
`Imaging
`
`Synthesis and Characterization of Alicyclic Polymers with Hydrophil-
`ic Groups for 193 nm Single-Layer Resist
`Etching and Deposition
`Negative Ion Formation in SiOz Etching Using a Pulsed Inductively
`Coupled Plasma
`Plasma-Wall Interactions in Dual Frequency Narrow—Gap Reactive
`Ion Etching System
`
`Study of Electron Energy Distribution Functions (EEDFs) in Three
`DC Low—Pressure Plasma Sources
`
`Effects of Post Annealing and Oxidation Processes on the Removal
`of Damage Generated during the Shallow Trench Etch Process
`Spatial and Temporal Behavior of Radicals in Inductively Coupled
`Plasm for SiOz Etching
`Aluminum Etch and After-Corrosion Characteristics in a m:0 Heli-
`con Wave Plasma Etcher
`Sub—Quarter—Micron Pt Etching Technology Using Electron Beam
`Resist with Round-Head
`
`Guangsup CHO, Young—Guon KIM, Young—Sam
`KIM and Eun-Ha CHOI
`
`Yuusukc
`GOMEI
`
`TANAKA, Takao
`, and
`Tokushige
`
`Soicltiro MITSUI,
`TAGUCHI,
`Yoshio
`HISATSUGU
`Jinfeng YANG, Eijiro TOYOTA and Shunichi
`KAWACHI
`SAITOI—I, Kimiyoshi
`lkuo OKADA, Yasunao
`DEGUCHI, Makoto FUKUDA, Hiroshi BAN and
`Tadahito MATSUDA
`Tsutomu MIYATAKE, Masaoki HIROSE, Tsutomu
`SHOKI, Ryo OHKUBO and Kuniaki YAMAZAKI
`Hong Goo LEE, Seung Yoon LEE, Ho Sung MOON
`Sang Hoon KIM, .loo-Hiuk SOHN and Jinho Am;
`Moonsuk YI, Eunsung SEO, Yongduck SEO
`’
`Kyoungho LEE and Ohyun KIM
`Jiro NAKAMURA, Yoshio KAWAI, Kimiyoshi
`DEGUCHI, Tadahito MATSUDA and Masatoshi ODA
`Kazuya
`NAKANISHI,
`Kimiyoshi
`DEGUCHI,
`Tadahito MATSUDA and Masatoshi ODA
`Seung Yoon LEE, Ki Chang SONG, Jiyoung KIM,
`Joo-Hiuk SON and Jinho AHN
`
`Masaki HASEGAWA, Yoshio GOMEI and Tokushige
`HISATSUGU
`Eijiro TOYOTA
`
`Shuji NAKAO, Hiroshi MASTUBARA. Astumi
`YAMAGUCHI, Junjiroh SAKAI, Akihiro NAKAE,
`Shin—ichirou TATSU, Kouichirou TSUJITA and
`Wataru WAKAMIYA
`Jin-Soo KIM, Chang—11 CHOI, Myoung-Soo KIM,
`CheOl-Kyu BOK, Hyeong—Soo KIM and Ki-Ho BAIK
`Young—Doc KIM, Sang-Jin PARK, Haiwon LEE.
`Eung—Ryul KIM, Sang-Jun CHOI and Si—Hyeung
`LEE
`GOGOLlDES,
`Evangelos
`TEGOU,
`Evangelia
`Ioannis RAPTIS, Giancarlo
`Panagiotis ARGITIS,
`MENEGHINI and Zheng CUI
`Young-Soc SOHN, Moon-Gyu SUNG, Young-Mi
`LEE, Eun-Mi LEE, Jin-Kyung OH, Sung-Hwau
`BYUN, Ycon-Un JEONG, Hye—Keun 0H. Ilsin AN.
`Kun-Sang LEE, In-Ho PARK, Joon-Yeon CHO and
`Sang-Ho LEE
`Kentaro MATSUNAGA, Daisuke KAWAMURA. Shoji
`MIMOTOGI, Tsukasa AZUMA and YaSUnobu
`ONISHI
`Min-Ho JUNG, J ae-Chang JUNG, Geunsu LEE and
`Ki-Ho BAIK
`
`Chang Ju CHOI, O Sung KWON and Yeo Song SEOL
`
`Satoshi MORISHITA, Hisataka H-AYASHI, Tetsuya
`TATSUMI, Yukinobu HIKOSAKA, Shuichi NODA,
`Mitsuru OKIGAWA, Miyako MATSUI. Masami
`INOUE and Makoto SEKINE
`Tatjana ANTONOVA, Gleb Bouonov, Antonina
`BOUGROVA.
`Won-Kook
`Cum,
`Leonid
`GONCHAROV, Hyung-Jin JUNO, Seoh-Keun KM}.
`Sergey KONDRANIN, Elena KRALKINA, Evgemy
`SlTlN and Vladimir OsuxHov
`Young-Jun LEE, Soon-Won HWANG, Kyung-Hee
`0H0, Jung-Yong LEE and chn-Young YEOM
`Shigenori
`HAYASHI, Michinari
`YAMANAKA’
`Masafumi KUBOTA and Mototsugu OGURA
`Jae Hee HA, Myoung-ho YIM and Jac-jeong KIM
`
`Takashi YUNOGAMI and Takao KUMIHASHI
`
`6884
`
`6888
`
`6894
`
`6899
`
`6906
`
`6916
`
`6922
`
`6928
`
`6934
`
`Abbott
`Exhibit 1008
`
`Page 004
`
`Abbott
`Exhibit 1008
`Page 004
`
`

`

`Study of Self-Limiting Etching Behavior in Wet Isotropic Etching of
`Silicon
`Films
`TiN
`of
`Deposition
`Vapor
`Chemical
`Tetrakis(ethylmethylamido)titanium and Ammonia
`
`from
`
`Epitaxial Growth of GaN by Helicon Wave Plasma Assisted Metal
`Organic Chemical Vapor Deposition Procc55
`Effect of Post Plasma Treatment on Reliability of Electron Cyclotron
`Resonance Chemical Vapor Deposited SiOF Films
`The Effect of Ar+ Ion Bombardment on SiOz Aerogel Film
`The Optimization of the Deposition Variables for High Photoconduc-
`tivity a—Si2H Films Prepared by Electron Cyclotron Resonance
`Plasma Chemical Vapor Deposition
`Stress Behavior of High Density Plasma Chemical Vapor Deposition
`Oxide Deposited on a Metal-Patterned Wafer
`
`Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(lll)
`Surfaces by Solid Phase Epitaxy
`
`New Method for Estimation of Grain Boundaries Contribution to
`Resistance of Highly Doped Polysilicon
`Beam Induced Reaction
`Effects of BFz and B Implantation-Doping on Crystalline Degrada—
`tion of Pseudomorphic Metastable GeOMSiom
`Defect vs. Nanocrystal Luminescence Emitted in Si—Implanted Si02
`Layers
`
`Thin Film Growth and Surface Modification by keV Ion Beam
`
`Annealing and Synchrotron Radiation Irradiation Effects on Hydro-
`gen Terminated Si(100) Surfaces Investigated by Infrared Reflec-
`tion Absorption Spectroscopy
`Electrical Properties of Electron-Beam Exposed Silicon Dioxides and
`Their Application to Nano—devices (Short Note)
`
`Electron Beam Doping in Darnageless Regions of Semiconductors by
`the Kick-Out Mechanism (Interstitialcy and Direct Interstitial
`Mechanism)
`Etch Properties of Gallium Nitride Using Chemically Assisted Ion
`Beam Etching (CAIBE)
`In—situ Observation of Focused Ion Beam Micropatterns on Semicon-
`ductors and Insulators
`Measurement of Secondary Electron Emission Coefficient (y) of MgO
`Protective Layer with Various Crystallinities
`
`;M’etrology and Inspection
`Evaluation of Shot Position Error in Electron Beam Lithography
`Using Overlay Metrology with ‘One-Shot’ Inspection Mark
`Analysis of the Image Formation Mechanism on High Energy Scan-
`ning Electron Microscopy
`A Simulation of Electron Scattering in Magnetic Materials
`
`Analysis of High-Acceleration-Voltage Scanning Electron Micro-
`scope Images
`Method for Evaluating the Interface of Semiconductor Heterojunc-
`tions Using a Free Electron Laser
`Microprobe Analysis of Pt Films Deposited by Beam Induced Reac-
`‘
`tion
`:Miérosystem and Field Emitter
`Micro Electro Mechanical Systems: From Research to Applications
`(Review Paper)
`A Capacitive Silicon Microaccelerometer with Force—Balancing Elec—
`trodes
`The Vapor Phase Deposition of Fluorocarbon Films for the Preven—
`tion of In—Use Stiction in Micromirrors
`
`Resonance Characteristics of Micro Cantilever in Liquid
`
`6939
`
`6942
`
`6946
`
`6951
`
`6955
`6959
`
`6965
`
`6970
`
`6974
`
`6977
`
`6981
`
`6984
`
`6991
`
`6996
`
`6998
`
`7006
`
`7010
`
`7015
`
`7019
`
`7024
`
`7028
`
`7032
`
`7038
`
`7042
`
`Cheol-Hyun HAN and Eun—Sok KIM
`
`Jae Gab LEE, Jung Hwan CHOI, Chongmu LEE, Ju
`Hwa HONG, Eun Gu LEE, Hyun Kook SHIN and
`Hae Nam HONG
`Ki-Sung KIM and SeOn-Hyo KIM
`
`Seoghyeong LEE and Jong-Wan PARK
`
`Hong-Ryul KIM and Hyung—Ho PARK
`Moonsang KANG, Yongseo K00 and Chul AN
`
`300 Geun LEE, Jong Wang PARK, Min KIM, Sun
`Rae KIM, Tae Wook SEO, U~In CHUNG and Geung
`Won KANG
`Isao
`Akiyoshi MUTO,
`OKADA,
`Masahisa
`SUZUMURA, Hiroya IKEDA, Shigeaki ZAIMA and
`Yukio YASUDA
`Serguei SPOUTAI, Hui—Gen CHUN and Kang-Ho
`AHN
`
`Seongil IM, Min Suk OH, Min Ho J00, Hyo Bae
`KIM, Hyun Kyoung KIM and Jong Han SONG
`Jun Yong JEONG, Seongil IM, Min Suk OH, Hyo
`Bae KIM, Keun Hwa CHAE, Chung Nam WHANG
`and Jong Han SONG
`Sung-Chang CHOI, Yong—Wook PARK, Won—Kook
`CHOI, Ki-Hwan KIM, Jun-Sik CHO, Sung HAN,
`Jung CH0, Sun JUNG, Young-Gun HAN, Byong—
`Kook Yoo, Hyung—Jin JUNO and Seok-Keun KOH
`Shinya HIRANO, Hideyuki NODA, Akitaka
`YOSHIGOE, Syed Irfan GHEYAS and Tsuneo URISU
`
`Bum Ho CHOI, Suk Koo JUNG, Suk Il KIM, Sung
`Woo HWANG, Jung Ho PARK, Yong KIM, Eun Kyu
`KIM and Suk Ki MIN
`Takao WADA and Hiroshi FUJIMOTO
`
`Weon—Jeong LEE, Hyeon-Soo KIM, J ae-Won LEE,
`Tae—Il KIM and Geun-Young YEOM
`Miyoko TANAKA, Kazuo FURUYA and Tetsuya
`SAITO
`Bun-Ha CHOI, Hyun-Joo OH, Young-Guon KIM,
`Jae-Jun KO, Jae—Yong LIM, Jin-Goo KIM, Dae-ll
`KIM, Guangsup CHO and Seung—Oun KANG
`
`Koji ASANO, Takeo NAGATA, Masami SATO,
`Yasuo NARA and Hiroshi ARIMOTO
`Masatoshi KOTERA and Kiyoshi YAMAGUCHI
`
`Keiji TAMURA, Masaaki YASUDA, Kenji MURATA
`and Masatoshi KOTERA
`Akemi MONIWA and Tsuneo TERASAWA
`
`Kazuhisa NISHI, Akira ISHIZU, Akio NAGAI and
`Takio TOMIMASU
`TAKAI, Christoph
`Yang—Kenn
`PARK, Mikio
`LEHRER, Lothar FREY and Heiner RYSSEL
`
`7047
`
`Walter LANG and Hermann SANDMAIER
`
`7052
`
`7058
`
`7064
`
`Byeoungju HA, Yongsoo OH and Cimoo SONG
`
`Jin-GOO PARK, Myong-Jong KWON, Sang-Ho LEE,
`Kang—Kuk LEE, Yong—Kweon KIM and Hyung-Jae
`SHIN
`Yoshihiko HIRAI, Ryosuke MORI, Hisao KIKUTA,
`Nobuhiro KArO, Koji INOUE and Yoshio TANAKA
`
`.uu
`
`Vt.
`
`Abbott
`Exhibit 1008
`
`Page 005
`
`Abbott
`Exhibit 1008
`Page 005
`
`

`

`Fabrication of a Silicon Micro-Probe for Vertical Probe Card Appli— 7070 Yong-Dae KIM, Jun-Hwan SIM, Jae»Woo NAM
`cation
`and Jong-Hyun LEE
`Thin—Film Micromirror Array for High-Brightness Projection 7074 Kyu—Ho HWANG, Yong-Jin SONG and Sang—cook
`Displays
`KIM
`zauon
`Fabrication of Microcantilever with a Silicon Tip Prepared by Anodi- 7078 Katsuya HIGA and Tanemasa ASANO
`
`Jun-Bo YOON, Chul-Hi HAN, Euisik YOON and
`Monolithic Fabrication of Electroplated Solenoid Inductors Using 7081
`Choong-Ki KIM
`Threc~Dimensional Photolithography of a Thick Photoresist
`Novel Fabrication of Comb Actuator Using Reactive Ion Etching of 7086 Hyung-Taek LIM and Yong-Kweon KIM
`Polysilicon and (110) Si Anisotropic Bulk Etching in KOH
`A Complementary Metal Oxide Semiconductor (CMOS) Compatible 7093 Seokyu KIM, Youngjoo YEE, Hyeoncheol KIM,
`Capacitive Silicon Accelerometer with Polysilicon Rib—Style
`Kukjin CHUN. lkpyo HONG and Jongwon LEE
`Flexures
`
`New Fabrication Process of Single-Crystalline Silicon Islands Using 7100 Choon-Sup LEE, Jac—Duk LEE and Chul-Hi HAN
`Double Diffusion: Application to a Heating Resistor of a Ther-
`mal lnkjet Printhcad
`Novel Fabrication Process of Freestanding Metallic Microstructures 7104 Chang-Wook BAEK and Yong—Kweon KIM
`Using Double Electroplating
`71 1O Seungdo AN, Yongsoo OI-I, Sang—on CHOI and
`Two-Input Axis Angular Rate Sensor
`Ci-moo SONG
`of 7116 Ryutaro MAEDA, Zhanjie WANG, Jiaru CHU, Jun
`for Realization
`Deposition
`and
`Patterning Technique
`AKEDO. Masaaki ICHIKI and So YONEKUBO
`Pb(Zr0.52, Tio,4g)03 Thick Film Micro Actuator
`Improved Automatic Alignment of Pinhole Integrated with Pho— 7120 Minoru SASAKI, Yuji ARAI, Wataru KAMADA and
`todiode
`Kazuhiro HANE
`Hermetically Sealed Inductor-Capacitor (LC) Resonator for Remote 7124 Eun-Chul PARK, Jun—Bo YOON and Euisik YooN
`Pressure Monitoring
`Influence of Interface Structure on Chemical Etching Process for Air 7129 Young Soo YOON, Joon Han KIM, Dennis. L,
`Gap of Microelectromechanical System Based on Surface
`POLLA and Young Hwa SHIN
`Micromachining
`Fabrication of a New Field Emitter Array with a Built-in Thin-Film 7134 Hidenori GAMO, Seigo KANEMARU and Junji Iron
`Transistor on Glass
`-
`Fabrication of Field Emitter Arrays Using Si Delamination by Hydro-
`71 38 Tanemasa ASANO and Daisuke SASAGURI
`gen Ion Implantation
`Nanofabrication and Nanodevice
`
`Atom Manipulation with the Scanning Tunneling Microscope: Nano- 7143 Gerhard MEYER. Ludwig BARTELS and Karl-Heinz
`structuring and Femtochemistry (Review Paper)
`RIEDER
`Atomic Force Microscope Based Nanolithography of Self-Assembled 7148 Jinchul KIM, Young 0H. Haiwon LEE, Yongwoo
`Organosilane Monolayer Resists
`SHIN and Sunwoo PARK
`Fabrication of GaAs Microtips and Their Application to Spin- 7151 Ryoichi
`SHINOHARA,
`Koichi
`YAMAGUCHI.
`Polarized Scanning Tunneling Microscope
`Yoshishige SUZUKI and Walid NABHAN
`Scanning Tunneling Microscopy Study of Silicide Structure on 71 55 Izumi 0N0, Masamichi YOSHIMURA and Kazuyuki
`Si(l 10) Surface
`UEDA
`Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by 7158 Chae-Deok LEE, Chanro PARK, Hwack 100 LEE.
`Low-Temperature Droplet Epitaxy
`Kyu-Seek LEE, Seong-Ju PARK, Chan Gyung
`PARK, Sam Kyu Non and Nobuyuki Kooucru
`Coupling Characteristics of Semiconductor Coupled Quantum Dots 7161 Koji ISHLBASHI, chrk H. OOSTERKAMP, Remko V.
`in Coulomb Blockade Regime
`HUMAN and Leo P. KOUWENHOVEN
`Effects of Rapid Thermal Annealing on the Structural and Optical 7165 Shinho CHO, Chan Kyung HYON, Eun Kyu KlM
`Properties of InAs/GaAs Self-Assembled Quantum Dots
`and Suk-Ki MIN
`Direct Transport Measurements through an Ensemble of INAS Self— 7169 Suk Koo JUNG. Bum Ho CHOI, Suk II KIM. Chan
`assembled Quantum Dots
`Kyeong HYON. Byung Don MlN, Sung W00
`HWANG, Jung Ho PARK. Yong KIM. Eun Kyu KIM
`and Suk Ki MIN
`HASHIMOTO,
`Fabrication of InP Submicron Pillars for Two-Dimensional Photonic 7172 Hitoshi
`HATATE, Masayuki
`FUJIWARA,
`Crystals by Reactive Ion Etching
`Hirofumi
`SHIRAKAWA, Yasufumi
`Yoshikazu TAKEDA, Hirohiko NAKANO, Toshiaki
`TATSUTA and Osamu TSUJI
`Self~0rganizing Process of Moderately Strained Zn._,Cdee Layer 7177 Hyun—Chul K0 and Shigeo FUJITA
`Grown on GaAs(l 10) by Molecular Beam Epitaxy
`Fabrication of a Nanometer-Scale Si—Wire by Micromachining of a 7182 Hideo
`FUIII.
`Seigo
`KANEMARU,
`Silicon-on-Insulator Substrate
`MATSUKAWA, Hiroshi
`HIROSHIMA,
`YOKOYAMA and Junji Iron
`Fabrication of Periodic Si Nanostructure by Controlled Anodization 7186 Takashi NAK’AGAWA, Hisakazu SUGIYAMA and
`Nobuyoshi KOSHIDA
`Sangyeon HAN, Taekeun
`A Nano-Structure Memory with Silicon on Insulator Edge Channel 7190 Geunsook
`PARK,
`and a Nano Dot
`HWANG and Hyungcheol SHIN
`A High-Performance Polycrystalline Silicon Thin-Film Transistor 7193 500 Young YOON, Sung Ki KIM, Jae Young OH,
`Using Metal-Induced Crystallization with Ni Solution
`Young .lin CHOI, Woo Sung SHON, Chae Ok KIM
`and .l in JANo
`Self-Organization of a Two-Dimensional Array of Gold Nanodots 7198 Shujuan HUANG,
`l-Iiroyuki
`SAKAUE,
`ShosO
`Encapsulated by Alkanethiol
`SHINOUBARA and Takayuki TAKAHAGI
`
`.
`Takash}
`Hiroshl
`
`
`
`Abbott
`Exhibit 1008
`
`Page 006
`
`Abbott
`Exhibit 1008
`Page 006
`
`

`

`TANAKA, Eiichi
`ISHII, Hirotaka
`Fabrication of Nanometer-Order Dot Patterns by Lift-ofl‘ Using a 7202 Tetsuyoshi
`Fullerene-Incorporated Bilayer Resist System
`KURAMOCHI and Toshiaki TAMAMURA
`Fabrication of a Separation by Implantation of Oxygen Silicon 7205 Dong-II PARK, Woo-Jae ZANG, Jong-Hyun LEE,
`Nano-Gap Using Thin Film Stress
`Jung—Hee LEE and Sung-Ho HAHM
`
`Cumulative Author Index of Volume 37, 1998, Part 1
`
`viii
`
`Abbott
`Exhibit 1008
`
`Page 007
`
`Abbott
`Exhibit 1008
`Page 007
`
`

`

`Special Issue
`
`Microprocesses & Nanotechnology
`
`Edited by
`
`Yoshinobu AOYAGI
`
`Tanemasa ASANO
`
`Hiroshi BAN
`
`Keiichi BETSUI
`
`Kimiyoshi DEGUCHI
`
`Masayuki ENDO
`
`Takashi FUKUSHIMA
`
`Hiroshi HANE
`
`Isamu HAN YU
`
`Masaru HORI
`
`Junji ITOH
`
`Shingo KADOMURA
`
`Toshihiko KANAYAMA
`
`Yoshio KAWAI
`
`Yukiko KIKUCHI
`
`Hiroo KINOSHITA
`
`Masanori KOMURO
`
`Masatoshi KOTERA
`
`Takahiro MAKINO
`
`Kenji MARUMOTO
`
`Shinji MATSUI
`
`Fumio MURAI
`
`Makoto NAKASE
`
`Yoshinori NAKAYAMA
`
`Shigehisa OHKI
`
`Toshiyuki OHTA
`
`Hiroshi OHTSUKA
`
`Shinji OKAZAKI
`
`Nobuo SHIMAZU
`
`Kazuyoshi SUGIHARA
`
`Yuji TAKAKUWA
`
`Tsuneo TERASAWA
`
`Tsuneo URISU
`
`Shigeaki ZAIMA
`
`
`
`
`
`Abbott
`Exhibit 1008
`
`Page 008
`
`Abbott
`Exhibit 1008
`Page 008
`
`

`

`
`
`
`
`Jpn J. Appl. Phys.
`
`Part I. No. 1213, D
`@1998 PUNIL'EMJOI
`
`
`
`' FOREWORD
`
`The 11th International Microprocesses and Nanotechnology Conference (MNC’98) was held at
`Kyoungju, Korea from July 13 through July 16, 1998 under the chairmanships of Professor Suk-Ki
`Min of Korea University and Professor Kenji Gamo of Osaka University, and was sponsored by the
`Japan Society of Applied Physics and the Korean Vacuum Society and technical—cosponsored by
`IEEE Elelctron Device Society. The Conference was also cooperated with GSAMCHE—Hanyang
`University, the Korean Federation of Science and Technology Societies, Korea Science & Engi-
`neering Foundation, the Korean Physical Society, Materials Research Society of Korea, the Korean
`Institute of Metals and Materials, the Korea Institute of Telematics Electronics, Korean Institute
`of Electrical Engineers, the Korean Association of Crystal Growth, the American Vacuum Society,
`Association of Super-Advanced Electronics Technologies, the Institute of Electrical Engineers of
`Japan, the Institute of Electronics, Information and Communication Engineers, the Japanese Soci-
`ety of Electron Microscope, the Japanese Society for Synchrotron Radiation Research, the Surface
`Science Society of Japan, and the Vacuum Society of Japan.
`The purpose of the Conference was to discuss the latest developments and fundamental issues in
`micro- and nano-fabrication technology and science, and related topics relevant to both the industrial
`and academic communities. At the technical session, 15?. contributed papers were presented and 25
`distinguished speakers were invited to discuss topics of current interest and to report on outstand-
`ing original studies. In addition, three special symposia, “Optical Mask Technology”, ”Microma—
`chining”, and “Scanning Probe Lithography” and a panel discussion, “Next Generation Processing
`Technique” were organized. The great interest in this conference was demonstrated by the large
`attendance and lively discussions.
`This special issue contains 111 papers from among the 130 which successfully completed a
`review process by the publication deadline. The authors, reviewers and program committee members
`deserve special recognition for their efforts to maintain the high quality and standards of this Journal.
`
`November 1998
`
`Process Te
`
`
`
`Optical lilht
`veloped and on
`manufacturing
`
`ometrics with i
`
`micron assist t
`
`paper, a pholm
`
`requirements h
`
`KEYWORDS:
`
`
`ing results
`resolution '
`
`
`
`
`
`cron feat
`
`other rel.
`
`2. Par
`
`ing syste
`
`lion. Th
`
`Abbott
`Exhibit 1008
`
`Page 009
`
`Abbott
`Exhibit 1008
`Page 009
`
`

`

`
`
`Jpn. J. Appl. Phys. Vol. 37 (1998) pp. 712447128
`Part 1, No. 12B,Decenrbcr1998
`@1998 Publication Board. Japanese Journal of Applied Physics
`
`Hermetically Sealed Inductor-Capacitor (LC) Resonator for Remote Pressure Monitoring
`Eun—Chul PARK", Jun—B0 YOON and Euisik YOON
`Department of Electrical Engineering, Koran Advanced Inrlilnre of Science and Technology,
`373-] [flirting-dong. Ynmnggn, Tnejnn 305770], Kin-en
`
`(Received July 30, 1998; accepted for publication September 8, I998)
`
`This paper reports an integrated inductor-capacitor (LC) resonator structure fabricated using bulk micromachining and
`anodic bonding technologies. In this resonator structure, pressure change monitored by a capacitive pressure sensor results in the
`change of resonance frequency. The resonance frequency shift is detected by inductive coupling from an external transmission
`coil;
`therefore, pressure can be monitored remotely using the passive LC resonator. The fabricated device size measures
`3 mm X 3 mm X 0.6 mm, and pressure responsivity has been estimated to be 2 MHz/mmHg. This micromachined, hermetically
`sealed structure is suitable for biomedical applications such as intraocular, cardiovascular and brain pressure monitoring.
`
`KEYWORDS:
`
`integrated LC resonator, bulk micromachining, anodic bonding, wireless pressure sensor, inductive coupling, her-
`metically sealed, inductor, electroplating
`
`'
`
`i
`‘
`
`i
`N
`
`1
`
`i
`
`1.
`
`Introduction
`
`Remote pressure monitoring is required in many fields such
`as biomedical applications,
`industry applications and in a
`harsh environment. Especially in biomedical applications,
`intraocular, cardiovascular and brain pressures are required
`to be measured wirelessly.
`In industrial application it is de-
`sirable to measure automobile tire air pressure remotely.
`In
`a harsh environment which human beings cannot easily ac-
`cess, remote pressure monitoring is also important. Since the
`1960s there have been a few attempts to detect pressure wire—
`lesslym) In previous approaches, the device size was rela—
`tively large and parasitic capacitance was not negligible be-
`cause the devices were hand-assemblcd or packaged in hybrid
`form. Therefore, it was hard to fabricate reproducible devices
`and parasitic effects could not be avoided.
`In this paper, we report, for the first time, the integration
`of a capacitive pressure sensor and an inductor on the same
`chip. This resonator structure does not need a special pack—
`age because it is self—hermetically sealed by anodic bonding.
`Initially, the device was designed for measuring intraocular
`pressure (IOP). An abnormally high IOP can damage the op-
`tical nerve system and can develop into glaucoma. Patients
`may lose their sight permanently if they are not treated ap—
`propriately. Therefore, it is necessary to continuously moni-
`tor the IOP for critical patients. An inductor-capacitor (LC)
`resonator which is composed of a capacitive pressure sensor
`and inductor can be implanted in the patient’s eye and trans;
`mit pressure information to an external detector. Normally,
`the IOP is about 20 mmHg above atmospheric pressure. IOPs
`higher than 40 mmHg may indicate glaucoma. Hence, a pres—
`sure range ofO to 100 mmHg must be monitored in this appli—
`cation. In this paper we report a micromachined LC resonat
`or used to monitor IOPs remotely. The structure, design con-
`cept, and results will be described in the following sections.
`
`2. LC Resonator Design
`
`Figure 1 shows the structure of the proposed LC resonant
`pressure sensor. A capacitive pressure sensor is composed
`of a p+ silicon membrane and a metal electrode on the glass
`substrate. The inductor is fabricated on the glass by Cu—
`electroplating. This inductor is defined outside the pressure
`
` Bottom J
`
`Fig. 1.
`
`Structure of micromachined LC resonant pressure sensor.
`
`sensor diaphragm and is connected to the capacitor electrode
`through a thick silicon layer and is hermetically sealed. This
`is a fully integrated LC resonant structure without any hybrid
`components and does not require any special packaging pro
`cess. Therefore, parasitic capacitance is low and a high Q
`factor can be achieved. One of the unique features of the pro-
`posed structure is that only the silicon and the glass substrate
`are exposed externally so that this allows the structure to be
`used safely for biomedical applications.
`For IOP applications, the operati