UNITED STATES PATENT AND TRADEMARK OFFICE
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`GENERAL ELECTRIC COMPANY, CONSUMER LIGHTING (U.S.), LLC d/b/a
`GE LIGHTING, CURRENT LIGHTING SOLUTIONS, LLC, OSRAM
`SYLVANIA, INC., and LEDVANCE LLC
`
`Petitioners
`
`v.
`
`CAO LIGHTING, INC.
`
`Patent Owner
`
`Case IPR2023-00123
`Patent No. 6,465,961 C2
`
`DECLARATION OF CHRISTIAN WETZEL
`IN SUPPORT OF PETITION FOR INTER PARTES REVIEW
`
`
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`LEDVANCE EXHIBIT 1021
`Page 1 of 33
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`

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`TABLE OF CONTENTS
`I.
`INTRODUCTION ........................................................................................... 2
`II. QUALIFICATIONS ........................................................................................ 2
`III. RELEVANT LEGAL PRINCIPLES .............................................................. 7
`IV. MATERIALS REVIEWED ............................................................................ 9
`V.
`CONCLUSION .............................................................................................. 10
`
`
`
`
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`1
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`I.
`
`INTRODUCTION
`1. I have been retained by counsel for LEDVANCE LLC (“LEDVANCE”),
`
`OSRAM Sylvania, INC. (“OSRAM”), General Electric Company, Consumer
`
`Lighting (U.S.), LLC d/b/a GE Lighting (“GE”), and Current Lighting Solutions,
`
`LLC (“Current”) (together “Petitioners”) to provide my opinion about the
`
`patentability of claims 21, 22, 25, 26, 28-30, 32-36, 40-44, 47-49, 52, 53, 56-59, 62,
`
`63, 65-68, 71-73, 77, 78, 81, 82, 85, 86, and 88-91 of U.S. Patent No. 6,465,961 C2
`
`(the “’961 Patent”), which I understand is assigned to CAO Lighting, Inc. (“CAO”
`
`or “Patent Owner”).
`
`2. I am being compensated for my time at a rate of $740 per hour, and understand
`
`that I will be reimbursed for any reasonable expenses I incur while performing this
`
`work. I have no financial or other personal interest in the ’961 patent, and my
`
`compensation is not contingent on the outcome of this matter or the specifics of my
`
`testimony.
`
`II. QUALIFICATIONS
`3. My qualifications for forming the opinions set forth in this declaration are
`
`summarized here and explained in more detail in my curriculum vitae (“CV”),
`
`which is attached as Exhibit A and incorporated herein. My CV also includes a
`
`list of my publications and the cases in which I have testified at deposition,
`
`hearing, or trial during the past 10 years.
`
`2
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`4. I am currently a professor in the Department of Physics, Applied Physics, and
`
`Astronomy and in the Department of Materials Science and Engineering at
`
`Rensselaer Polytechnic Institute in Troy, New York.
`
`5. I received my Vordiplom (B.S.) in Technical Physics from the Technical
`
`University of Munich, Germany in 1984; my Diplom (M.S.) in Technical Physics
`
`from the Technical University of Munich in 1988; and my Dr. rer. nat. (Ph.D.) in
`
`Physics (summa cum laude) from the Technical University of Munich in 1993. My
`
`Ph.D. thesis was in the area of group III-V semiconductor optoelectronic
`
`characterization.
`
`6. From 1994 to 1997, I worked as a visiting research fellow and postdoctoral
`
`physicist at the University of California, Berkeley. At Berkeley, I worked on defect
`
`characterization of gallium nitride in group-III nitride semiconductors.
`
`7. From 1997 to 2000, I was a postdoctoral researcher in the High Tech Research
`
`Center and Meijo University in Nagoya, Japan. There, I worked under the direction
`
`of Isamu Akasaki and Hiroshi Amano. At that time, Drs. Akasaki and Amano were
`
`focused on improving the optical power output of LEDs and laser diodes, among
`
`other pursuits. My work there focused in the characterization of materials used in
`
`the development of LEDs and laser diodes with higher power output. Drs. Amano
`
`and Akasaki would later win the Nobel Prize for their work in the development of
`
`LEDs and laser diodes.
`
`3
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`8. From 2000 to 2004, I worked as a senior epitaxy scientist and a green project
`
`manager at Uniroyal Optoelectronics in Tampa, Florida. At Uniroyal, I worked on
`
`the development of epitaxy processes for green light-emitting diodes in group-III
`
`nitride semiconductors. Among our goals was to develop monochromatic higher
`
`power LEDs for use in general lighting applications. In this capacity, I worked as
`
`part of a team that included engineers who built prototype lamps containing the high
`
`power LEDs that I had helped develop with and without phosphors. While I was
`
`responsible for green epitaxy development, I was also involved in all technical
`
`aspects of light emitting diode (LED) die and lamp design and manufacture in terms
`
`of epitaxy, device fabrication, backend fabrication, die sort and binning, as well as
`
`technical sales support.
`
`9. In 2004, I was appointed Associate Professor of Physics, Applied Physics, and
`
`Astronomy at Rensselaer Polytechnic Institute (“RPI”) in Troy, New York. I was
`
`also appointed the Wellfleet Career Development Constellation Professor, Future
`
`Chips, at Rensselaer Polytechnic Institute. In 2007, I received tenure at RPI. While
`
`at RPI, I have researched the efficiency limitations of group-III nitride light-emitting
`
`diodes and epitaxial processes to enhance efficiency, power output and performance
`
`of GaInN/GaN light-emitting diodes.
`
`10. I have received numerous honors and awards for my work, including the
`
`Illuminating Ideas awards of the United States Department of Energy in 2008 and
`
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`2011 for significant achievements in solid-state lighting research and development.
`
`I am a member of the American Physical Society, the Institute of Electrical and
`
`Electronics Engineers, and the Materials Research Society. I served as conference
`
`chair to the International Workshop on Nitride Semiconductors from 2009 to 2011,
`
`the International Conference on Nitride Semiconductors from 2011 to 2013, the
`
`Gordon Research Conference on Defects in Semiconductors from 2012 to 2014, and
`
`the Conference on Laser and Electro Optics – Applications and Technology from
`
`2015 to 2017.
`
`11. In my role as professor at Rensselaer Polytechnic Institute, I have been
`
`involved in research to provide technology solutions to various LED epitaxy and
`
`characterization challenges. For example, for several years, my work has been
`
`actively focused on alleviating power droop in LEDs. I also have extensive research
`
`expertise in light emitting devices and solid-state lighting.
`
`12. I have also been active in the Department of Energy Solid State Lighting
`
`program on a very wide range of technological challenges of LED development and
`
`volume manufacturing. For example, I was a panelist at the 2010 Department of
`
`Energy Solid-State Lighting R&D Workshop in a panel discussion “How
`
`Eliminating Defects Can Improve LED Efficiency.”
`
`13. I have authored or co-authored more than 190 scientific publications. Of
`
`particular relevance, I have co-authored over one hundred technical papers related
`
`5
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`to III-V light-emitting diodes in recent years.
`
`14. As part of my scientific work in enhancing the performance of group-III
`
`nitride LEDs I have also performed research on the interplay of sapphire substrate
`
`patterning and epitaxial growth of LEDs. We found particular LED performance
`
`benefits by means of reduction of crystalline defects such as threading dislocations
`
`and enhanced light extraction when the substrate was patterned on a length scale
`
`below the 1 micrometer range. This work has received rather wide attention as
`
`measured by a high count of scientific citations.
`
`15. In another aspect of my academic work, I have actively participated in the
`
`U.S. Department of Energy workshop series on Solid State Lighting and its
`
`associated road mapping exercises. The workshops bring together representatives
`
`from industry, academia and government to identify opportunities and challenges in
`
`the entire LED lighting value chain from chip design over LED packaging, luminaire
`
`design, and color metrics. The workshop also plays an important role in identifying
`
`the key performance parameters, and monitoring progress along those metrics. In
`
`addition, some aspects of my work in LED luminaires have been published in U.S.
`
`Patent Application No. 2011/0042709 A1, entitled “free-standing mounted light
`
`emitting diodes for general lighting.
`
`16. I have trained and guided numerous engineers (including students) in the field
`
`of LEDs and applications using LEDs and have collaborated with numerous
`
`6
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`engineers active in the field of LEDs. In my university role, I have trained and guided
`
`bachelor students, master students, graduate students, and postdocs in fields relating
`
`to solid-state lighting and light emitting diodes. Accordingly, I know from personal
`
`experience the level of ordinary skill in the art for the ’961 Patent. As an expert in
`
`the relevant field, I have an understanding of, and am capable of explaining, what a
`
`person of ordinary skill in the art (POSITA) would have understood as of the
`
`timeframe of the invention.
`
`III. RELEVANT LEGAL PRINCIPLES
`17. I am not an attorney. In preparing and expressing my opinions and
`
`considering the subject matter of the ’961 Patent, I am relying on certain legal
`
`principles that counsel has explained to me.
`
`18. I have been informed by counsel that prior art to the ’961 patent includes
`
`patents and printed publications in the relevant art that predate the priority date of
`
`the ’961 patent. For purposes of this Declaration, I am applying August 24, 2001,
`
`as the priority date of the ’961 Patent. I have not evaluated whether all claims of the
`
`’961 Patent are entitled to a priority date of August 24, 2001.
`
`19. I have been informed by counsel that a patent claim is invalid under 35 U.S.C.
`
`§ 103 as being obvious only if the differences between the claimed invention and the
`
`prior art are such that the subject matter as a whole would have been obvious at the
`
`time the invention was made to a person of ordinary skill in that art (“POSITA”).
`
`7
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`An obviousness analysis requires consideration of four factors: (1) scope and content
`
`of the prior art relied upon to challenge patentability; (2) differences between the
`
`prior art and the claimed invention; (3) the level of ordinary skill in the art at the
`
`time of the invention; and (4) the objective evidence of non-obviousness, such as
`
`commercial success, unexpected results, the failure of others to achieve the results
`
`of the invention, a long-felt need which the invention fills, copying of the invention
`
`by competitors, praise for the invention, skepticism for the invention, or independent
`
`development.
`
`20. I have been further informed by counsel that a prior art reference is proper to
`
`use in an obviousness determination if the prior art reference is analogous art to the
`
`claimed invention. I understand that a prior art reference is analogous art if at least
`
`one of the following two considerations is met. First a prior art reference is
`
`analogous art if it is from the same field of endeavor as the claimed invention, even
`
`if the prior art reference addresses a different problem and/or arrives at a different
`
`solution. Second, a prior art reference is analogous art if the prior art reference is
`
`reasonably pertinent to the problem faced by the inventor, even if it is not in the
`
`same field of endeavor as the claimed invention.
`
`21. I have been further informed by counsel that there are several recognized
`
`rationales for combining references or modifying a reference to show obviousness.
`
`These rationales include: (a) combining prior art elements according to known
`
`8
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`methods to yield predictable results; (b) simple substitution of one known element
`
`for another to obtain predictable results; (c) use of a known technique to improve a
`
`similar device (method, or product) in the same way; (d) applying a known
`
`technique to a known device (method or product) ready for improvement to yield
`
`predictable results; (e) choosing from a finite number of identified, predictable
`
`solutions, with a reasonable expectation of success; and (f) some teaching,
`
`suggestion, or motivation in the prior art that would have led a POSITA to modify
`
`the prior art or to combine multiple prior art teachings to arrive at the claimed
`
`invention.
`
`22. Also, I have been informed by counsel that obviousness does not require
`
`physical combination/bodily incorporation, but rather consideration of what the
`
`combined teachings would have suggested to a POSITA at the time of the alleged
`
`invention.
`
`IV. MATERIALS REVIEWED
`23. In forming my opinions, I relied on my experience, education, and training,
`
`as well as my detailed review of the Declaration of Dr. Michael S. Lebby, Ph.D.,
`
`under 37 C.F.R. § 1.68 in support of Wolfspeed, Inc. and IDEAL Industries Lighting,
`
`LLC d/b/a Cree Lighting Petition for Inter Partes Review of the ’961 patent in
`
`IPR2022-00847 (the “Lebby Declaration”), including all of the materials and
`
`exhibits cited therein. I fully agree with, and hereby adopt, the opinions set forth in
`
`9
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`the Lebby Declaration as my own for the purposes of this proceeding.
`
`V. CONCLUSION
`24. I hereby declare under penalty of perjury that all statements made herein of
`
`my own knowledge are true and that all statements made on information and belief
`
`are believed to be true, and further that these statements were made with the
`
`knowledge that willful false statements and the like so made are punishable by fine
`
`or imprisonment, or both, under 18 U.S.C. § 1001.
`
`
`
`
`
`
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`10
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`Respectfully Submitted
`
`_________________________
`
`
`
`
`
`
`
`
`
`
`
`
`
`Christian Wetzel
`
`Date: October 31, 2022
`
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`
`
`EXHIBIT A
`EXHIBIT A
`
`
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`LEDVANCE EXHIBIT 1021
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`CHRISTIAN WETZEL
`curriculum vitae
`
`
`Christian M. Wetzel, President
`Lumionics Technologies LLC
`Troy NY, 12180, U.S.A.
`
`Professor, Rensselaer Polytechnic Institute,
`Department of Physics, Applied Physics and Astronomy,
`and Department of Materials Science and Engineering,
`Troy NY, 12180, U.S.A.
`
`Educational Preparation
`1993 Dr. rer. nat. (Ph.D.), mit Auszeichung (summa cum laude), Physics, Technical University Munich, Munich.
`1988 Diplom (M.S.) Technical Physics, Technical University Munich, Germany.
`1984 Vordiplom (B.S.) Technical Physics, Technical University Munich, Germany.
`
`Professional Experience
`6/2014 - present Professor, Department of Materials Science and Engineering,
`
`Rensselaer Polytechnic Institute, Troy NY.
`7/2011 - present Professor, Department of Physics, Applied Physics and Astronomy,
`
`Rensselaer Polytechnic Institute, Troy NY.
`7/2007 - present Tenure, Rensselaer Polytechnic Institute, Troy NY.
`5/2005 - present Lumionics Technologies LLC, President, Troy NY.
`7/2015 - 6/2018 Associate Dean for Research and Graduate Programs, School of Science,
`
`Rensselaer Polytechnic Institute, Troy NY.
`7/2015 - 1/2016 Affiliate, Lawrence Berkeley National Laboratory, Berkeley, CA.
`6/2004
`Wellfleet chair, Rensselaer Polytechnic Institute, Troy NY.
`3/2004
`Career Development Constellation Professor, Future Chips,
`
`Future Chips Constellation, Rensselaer Polytechnic Institute, Troy NY.
`3/2004 - 6/2007 Associate Professor, Department of Physics, Applied Physics and
`
`Astronomy, Rensselaer Polytechnic Institute, Troy NY.
`6/2002 - 2/2004 Green Project Manager, Uniroyal Optoelectronics, Tampa, FL.
`10/2000 - 5/2002 Senior Epi Scientist, Uniroyal Optoelectronics, Tampa, FL.
`3/1997 - 9/2000 Postdoctoral Researcher, High Tech Research Center, Meijo University, Nagoya, Japan.
`3/1996 - 2/1997 Postdoctoral Physicist, Lawrence Berkeley National Laboratory, Berkeley, CA.
`2/1994 - 2/1996 Visiting Research Fellow, University of California and Lawrence Berkeley National Laboratory,
`
`Berkeley, CA.
`5/1993 - 2/1994 Postdoctoral Physicist, Technische Universität München, Germany.
`
`Professional Service
`• Conference General Chair: Conference on Laser and Electro Optics (CLEO 2016 + CLEO 2017), Applications
`and Technology, 2015 – 2017.
`• Conference Chair: Gordon Research Conference: Defects in Semiconductors, 2012 – 2014; International
`Conference on Nitride Semiconductors, 2011 – 2013; International Workshop on Nitride Semiconductors, 2009
`– 2011.
`• Conference Vice Chair: Gordon Research Conference: Defects in Semiconductors, 2010 – 2012.
`• Program Chair: International Conference on Nitride Semiconductors, 2017 – 2019; Conference on Laser and
`Electro Optics (CLEO), Applications and Technology, 2014 – 2015, Electronic Materials Conference, 2009 –
`2011.
`International Advisory Board Member: Asia-Pacific Workshop on Widegap Semiconductors, 2019 – 2022;
`Advanced Electronic Materials, Wiley-VCH, 2014 – present; International Conference on Nitride
`Semiconductors, 2013 – present; International Symposium on Advanced Plasma Science and its Application to
`Nitrides and Nanomaterials, 2011 – 2015; International Workshop on Nitride Semiconductors, 2003 – present;
`International Symposium on the Growth of Nitride Semiconductors, 2014.
`• Treasurer: Electronic Materials Conference, 2007 – 2009.
`
`•
`
`
`
`1
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`CHRISTIAN WETZEL
`
`• Member at Large: Electronic Materials Conference Committee, 2015 – present.
`Symposium Chair: International Semiconductor Device Research Symposium, 2013; Conference on Laser-
`•
`Optics / International Quantum Electronics Conference, Applications and Technology: Energy and
`Environment, 2012 – 2014; International Conference on Solid State Lighting, 2011; Symposium on Wide
`Bandgap Materials & Devices, Electro-Chemical Society, 2010; Symposium Chair: European Materials
`Research Society, 2004; GaN, AlN, InN, and their Alloys, Materials Research Society, 2004; GaN and Related
`Alloys 2002, Materials Research Society, 2002; GaN and Related Alloys, 2000, Materials Research Society,
`2000.
`• Publication Committee Member: International Conference on Nitride Semiconductors, 2008 – 2009;
`International Symposium on the Growth of Nitride Semiconductors, 2014 – 2015.
`• Program Committee Member: Lester Eastman Conference on High Performance Devices, 2011 – 2012;
`Conference on Laser-Optics / International Quantum Electronics Conference, Applications and Technology:
`Energy and Environment, 2010 – 2014; International Symposium on Growth of III-Nitrides, 2008; International
`Workshop on Nitride Semiconductors, 2003 – 2008; Asia–Pacific Optical Communication Conference, 2006;
`International Reliability Physics Symposium - Wide Bandgap/Compound Semiconductor, 2006 – 2009;
`International Symposium on Blue Laser and Light Emitting Diodes, 2005 – 2006; Conference on Laser-Optics /
`International Quantum Electronics Conference, Subcommittee Semiconductor Lasers and LEDs, 2004 – 2007;
`Electronic Materials Conference, 1999 – present, International Conference on Nitride Semiconductors, 2014 –
`2015; International Workshop on Nitride Semiconductors 2020 – 2022, Asia-Pacific Workshop on Widegap
`Semiconductors, 2010 – 2011, and others.
`Senior member: The Institute of Electrical and Electronics Engineers (IEEE), 2007 – present; Optical Society of
`America (OSA), 2016 – present.
`• Member: Optical Society of America (OSA); International Society for Optics and Photonics (SPIE); American
`Physical Society (APS); The Institute of Electrical and Electronics Engineers (IEEE); Materials Research
`Society (MRS); Deutsche Physikalische Gesellschaft (DPG).
`
`
`•
`
`
`Publications
`Author and co-author of about 200 articles in peer reviewed archival journals, inventor of six granted patents, editor
`and co-editor of three conference proceeding volumes (2613 pages total) and one data review volume on nitrides
`(830 pages) resulting in ~6400 citations and a Hirsch-factor of 42 (Google Scholar, 7/2022).
`
`Presentations
`Speaker of about 190 invited talks and seminars. Co-author of about 70 talks given by advisees.
`
`Research Expertise
`Compound semiconductors, optoelectronics, nano-fabrication, electronic bandstructure and defect spectroscopy,
`epitaxial crystal growth, light emitting devices, solid-state lighting, wide bandgap semiconductors, group-III nitride
`compounds.
`
`Teaching and Advising
`
`Doctoral Students
`
`David Elsaesser
`
`Adam Bross
`
`Mark Durniak
`
`(employment dates in cursive are status dates as known, not starting dates)
`Physics, "Simulation of Light Emitting Diodes under Piezoelectric Polarization", May 2017.
`Presently Intel Inc., Boise, ID.
`Materials Science and Engineering, "Epitaxy and Microstructure of a- and c-Plane GaInN on
`Ni-Self-Assembled Nanopatterned Templates", March 2017. Presently Intel Inc., Albuquerque,
`NM.
`Materials Science and Engineering, "Epitaxy and characterization of cubic GaN and Ga1-xInxN
`on micropatterned Si (001)", May 2016, Recipient 2015 Best Student Presentation at the
`Hudson-Mohawk Chapter of the American Vacuum Society Spring Conference. Recipient
`Founders Award of Excellence recipient at Rensselaer’s 21st Annual Honors Convocation Oct.
`2014. Recipient 2014 Smart Lighting ERC Graduate student perfect pitch competition winner.
`Recipient 2014 Eastern New York Chapter Scholarship from the Eastern NY chapter of ASM
`international. Recipient 2013 Best Student Paper Presentation Award of the Electronic
`
`
`
`2
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`CHRISTIAN WETZEL
`
`Yong Xia
`
`Mingwei Zhu
`
`Yufeng Li
`
`Wei Zhao
`
`Shi You
`
`Christoph Stark
`
`Wenting Hou
`
`Liang Zhao
`
`Materials Committee June 2014. Sandia National Laboratory Excellence in Engineering
`Scholarship 2013+2014, Best Student Presentation Award, Electronic Materials Conference
`2013. Presently, Current, powered by GE, Denver, CO
`Physics, "Electrical and Cathodoluminescence Studies on the Efficiency of GaInN/GaN Light
`Emitting Diodes," December 2009. Presently Apple Inc. Cupertino, CA.
`Physics, "Epitaxy and Structural Characterizations of Green and Deep Green GaInN/GaN Light
`Emitting Diodes," May 2010. Presently Applied Materials, Inc., Santa Clara, CA.
`Physics, "Quantum Efficiency Study of GaInN-based Green Light Emitting Diodes," August
`2010. Presently Associate Professor Xi'an Jiaotong University, Xi'an, China.
`Physics, "Efficiency Study and Device Optimization of GaInN-Based Green Light-Emitting
`Devices", December 2010. Presently Lumentum, Inc., Milpitas, CA.
`Physics, "Optical Polarization Study and Dislocation Reduction in GaN-based Light-Emitting
`Diodes", June 2012. 2017 GlobalFoundries, Malta, NY; 2021 Applied Materials, Sunnyvale CA.
`Physics, "Micro and nano-structured green GaInN/GaN light-emitting diodes", May 2012.
`Presently Carl Zeiss AG Oberkochen, Germany.
`Physics, "Contact Formation and Patterning Approaches for Group-III Nitride Light Emitters,"
`May 2013. Presently Applied Materials, Inc., Santa Clara, CA.
`Physics, "Spectroscopy on the Efficiency in GaInN LEDs and Solar Cells", December 2013.
`Presently Alta Devices, Inc., Sunnyvale, CA.
`
`Alexey Koudymov
`
`Xiaoli Wang
`
`Liang Zhao
`
`
`
`Postdoctoral Fellows
`
`Jayantha Senawiratne Physics, "Development of a Spectroscopy Lab," 2/2006 – 5/2008. Presently Corning Inc.,
`Corning, NY.
`Theeradetch Detchprohm Physics, "Epitaxy of Group-III Nitrides," 12/2004 – 1/2008. Presently Georgia Institute
`of Technology, Atlanta, GA
`Physics, "Light Emitting Device Fabrication," 7/2009 – 5/2010. Presently Sensitron
`Semiconductor Inc., Deer Park, NY.
`Physics, "Materials and Device Fabrication," 8/2011 – 12/2012. Presently Univ. Illinois
`Urbana Champagne, Ill.
`Physics, "Metal Organic Vapor Phase Epitaxy", 1/2014 – 8/2014. Presently Alta Devices,
`Inc., Sunnyvale, CA.
`Physics, “Modulation Spectroscopy,” Presently Glo, Inc. Sweden.
`
`Ibrahim Yilmaz
`
`Research Professors
`
`Theeradetch Detchprohm Research Associate Professor, Physics, "Epitaxy of Group-III Nitrides, Management of
`Epi and Characterization Lab," 2/2008 – 1/2013. Presently Georgia Institute of Technology,
`Atlanta, GA.
`
`
`Courses Taught
`
`PHYS 1050
`PHYS 1100
`
`General Physics, undergraduate level: Spring 2014, Spring 2015.
`Physics 1, Newton's Mechanics, undergraduate level: Fall 2021, Spring 2021, Fall 2020, Spring
`2020, Fall 2019, Fall 2018, Spring 2017, Fall 2016, Spring 2016, Fall 2013, Spring 2010, Fall
`2009, Spring 2009, Spring 2008, Fall 2007, Spring 2007, Fall 2006, Spring 2006, Fall 2005, Fall
`2004.
`Course Administrator ~400 Students: Fall 2007.
`Physics 2, Electrodynamics, undergraduate level: Spring 2013.
`Science of Information Technology, undergraduate level: Spring 2005.
`Electrodynamics, graduate level: Spring 2018, Spring 2019.
`
`Theory of Solids, graduate level: Fall 2010, Fall 2008, Fall 2012.
`Physics Colloquium, graduate level: Spring 2007, Fall 2006.
`
`PHYS 1100
`PHYS 1200
`PHYS 2050
`PHYS 6410
`PHYS 6710
`PHYS 6900
`
`Honors and Awards
`
`
`
`3
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`CHRISTIAN WETZEL
`
`
`
` •
`
`•
`
`9.
`
`Illuminating Ideas, The United States Department of Energy, Presented to Rensselaer Polytechnic Institute, For
`Significant Achievements, In Solid-State Lighting R&D, 2011, Atlanta, GA, 2/2012.
`Illuminating Ideas, The United States Department of Energy, Presented to Rensselaer Polytechnic Institute, For
`Significant Achievements, In Solid-State Lighting R&D, 2008, San Francisco, CA, 2/2009.
`• Rensselaer Polytechnic Institute, Troy NY, The Trustee Celebration of Faculty Achievement, 2004, 2005, 2007,
`2010, 2014, 2015, 2017, and 2019.
`• Rensselaer Polytechnic Institute, Troy NY, named chair, Wellfleet Career Development Constellation
`Professor, Future Chips, 6/2004.
`• Rensselaer Polytechnic Institute, Troy NY, chaired professorship, Career Development Constellation Professor,
`Future Chips, 3/2004.
`• Deutsche Forschungsgemeinschaft, Auslands-Forschungsstipendium, 1994 and 1995.
`• Technische Universität München, Dr. rer. nat., mit Auszeichung, 5/1993.
`
`Patents:
`1. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline
`phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,957,819
`(granted 23-MAR-2021). (App 16/567,535).
`2. “Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline
`phase structure, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,644,144 (granted
`5-MAY-2020).
`3. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline
`phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,453,996
`(granted 22-OCT-2019). (App. 15/374,547)
`4. “Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline
`phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, Patent US 10,164,082 (granted 25-DEC-
`2018). (App. 15/466,4610)
`5. “Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline
`phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, T. Detchprohm, and C. Stark, Patent US 9,520,472
`(granted 13-DEC-2016). (App. 14/383,8331)
`6. “Semiconductor device with efficient carrier recombination”, A. Koudymov and C. Wetzel, US Patent
`8,916,885 (granted 23-DEC-2014)
`7. “Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy”, T.
`Detchprohm, M. Zhu and C. Wetzel, Patent Application US20110254134A1 (published 20-NOV-2011)
`8. “Method of Fabricating an Ohmic contact to n-type Gallium Nitride”, W. Hou, T. Detchprohm, and C. Wetzel,
`Patent Application US20120052679A1 (published 01-MAR-2012)
` “Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy”, M. Zhu, T.
`Detchprohm, and C. Wetzel, Patent Application US20110042709A1 (published 19-MAY-2011)
`10. “Free-standing mounted light emitting diodes for general lighting”, C. Stark, C. Wetzel, and T. Detchprohm,
`Patent Application US20110042709A1 (published 24-FEB-2011)
`
`
`Publications
`Electronic preprints of most publications are available at http://www.rpi.edu/~wetzel
`
`
`
`Articles in Refereed Journals
`
`1. “Analysis of damage in InGaN/GaN layers upon Xe and Pb swift heavy ion irradiation using ion channeling and
`X-Ray diffraction”, Przemysław Jóźwik, Miguel C. Sequeira, Sérgio Magalhães, Djibril Nd. Faye, Clara Grygiel,
`Isabelle Monnet, Christian Wetzel, Adam Bross, Eduardo Alves, Katharina Lorenz, (submitted 2021)
`2. “Exploring swift-heavy ions irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of
`Raman and photoluminescence to assess the irradiation effects on optical and structural properties”, J. Cardoso,
`N.B. Sedrine, P. Jozwik, M. Sequeira, C. Wetzel, C. Grygiel, K. Lorenz, T. Monteiro, and M.R. Correia, J.
`Mater. Chem. C, 9, 8809 (2021). DOI: 10.1039/d1tc01603b
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`CHRISTIAN WETZEL
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`3. "Effect of InGaN/GaN superlattice on the characteristics of AlGaN/GaN HEMT”, H. Itakura, T. Nomura, N.
`Arita, N. Okada, C. Wetzel, T.P. Chow, and K. Tadatomo, AIP Advances 10(2), 025133 (2020). DOI:
`10.1063/1.5139591
`4. "Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs using
`Selective Epi Removal", Zhibo Guo, Collin Hitchcock, Christian Wetzel, Robert Karlicek, Guanxi Piao, Yoshiki
`Yano, Shuuichi Koseki, Toshiya Tabuchi, Koh Matsumoto, Mayank Bulsara, and T. Paul Chow. IEEE Electron
`Device Letters 40(11), 1736-1739 (2019) DOI 10.1109/LED.2019.2943911
`5. “Elastic variation of quasi-one-dimensional cubic-phase GaN at nanoscale", S.C. Lee, E. Peterson, Y. Jiang, C.
`Wetzel, S. Brueck, ACS Crystal Growth & Design 19, 5046−5053 (2019) DOI: 10.1021/acs.cgd.9b00339
`6. "Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers”,
`Jennifer Howell-Clark, Zhibo Guo, Christian Wetzel, T. Paul Chow, Piao Guanxi, Yoshiki Yano, Toshiya
`Tabuchi, and Koh Matsumoto, Solid State Electronics 162, 107646 (2019). doi 10.1016/j.sse.2019.107646
`7. "Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-
`organic vapor-phase epitaxy", S. C. Lee, Y.-B. Jiang, M. Durniak, C. Wetzel, and S.R.J. Brueck,
`Nanotechnology, 30, 025711 (2019) DOI: 10.1088/1361-6528/aae9a2
`8. "Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy"
`Yanwen Chen, Tianmeng Wang, Zhipeng Li, Huanbin Li, Tao Ye, Christian Wetzel, Hanying Li, and Su-Fei Shi,
`Scientific Reports, 8, 16482 (2018) DOI: 10.1038/s41598-018-34645-8
`9. "Ultrasensitive tunability of the direct bandgap of two-dimensional InSe flakes via strain engineering" Yang by
`Li, Tianmeng Wang, Meng Wu, Ting Cao, Yanwen Chen, Raman Sankar, Rajesh Ulaganathan, Fang-Cheng
`Chou, Christian Wetzel, Chengyan Xu, Steven Louie, Sufei Shi, 2D Materials 5(2), 021002 (2018). DOI:
`10.1088/2053-1583/aaa6eb
`10. “Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization”, David R. Elsaesser,
`Mark T. Durniak, Adam S. Bross, and Christian Wetzel, J. Appl. Phys. 122, 115703 (2017); DOI:
`10.1063/1.5003251
`11. “Nanopatterned epitaxy of non-polar Ga1-yInyN layers with caps and voids”, A.S. Bross, M.T. Durniak, D.R.
`Elsaesser, and C. Wetzel, J. Appl. Phys. 122(9), (2017) DOI: 10.1063/1.5001126
`12. "Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond " S.C. Lee,
`Y.B. Jiang, M.T. Durniak, C.J.M. Stark, T. Detchprohm, C. Wetzel, S.R.J. Brueck, Cryst. Growth Des., 16(4),
`2183–2189, (2016) DOI: 10.1021/acs.cgd.5b01845
`13. “Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and their Strain Analysis”,
`M.T. Durniak, A.S. Bross, D. Elsaesser, A. Chaudhuri, M.L. Smith, A.A. Allerman, S.C. Lee, S.R.J. Brueck, and
`C. Wetzel, Adv. Electronic Mater. 2, 1500327 (2016). DOI: 10.1002/aelm.201500327
`14. "Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase
`transition", S.C. Lee, N. Youngblood, Y.B. Jiang, E.J. Peterson,