6/21/24, 8:28 PM
`
`SIPOS heterojunction contacts to silicon (Technical Report) | OSTI.GOV
`
`OSTI.GOV / Technical Report: SIPOS heterojunction contacts to silicon
`
`SIPOS heterojunction contacts to silicon
`
`TECHNICAL REPORT
`
`·
`
`01 February 1986
`
`OSTI ID: 5905985
`
`Kwark, Y H; Swanson, R M
`
`Deliberate introduction of controlled amounts of an oxygen-bearing species such as nitrous oxide
`into the deposition ambient normally used for chemical vapor deposition of polysilicon produces
`SIPOS, a class of silicon oxides that exhibits a wide range of physical properties. It is possible to
`tailor SIPOS lm characteristics such as refractive index by altering the oxygen partial pressure in
`the deposition ambient. The addition of a dopant species converts these lms from semi-insulating
`to a form that can be made suciently conductive after annealing to make them interesting for
`electronic applications. The potential for conveniently altering the effective mobility gap in this
`material suggests its use in heterojunction contact structures to silicon. Incorporation of these lms
`into the emitter structure of an NPN bipolar transistor has been found to reduce the emitter
`saturation current fty fold. This suppression of reverse injected hole transport has often been
`assumed to be the result of a wider gap in the SIPOS due to the presence of incorporated oxygen.
`However, this seems to be an oversimplication in view of microstructural studies that revealed a
`multi-phase structure consisting of a ne dispersion of silicon microcrystals embedded in an oxide-
`like matrix. Experimental results indicated a relative insensitivity to the oxygen content of the lms;
`the hole blocking action was as effective in low oxygen content lm as in high. This insensitivity to
`bulk lm properties implied that other mechanisms, in this case the formation of an interfacial oxide
`layer, may be primarily responsible for the reduced hole currents.
`
`Read less...
`
`Research Organization:
`Stanford Univ., CA (USA). Stanford Electronics Labs.
`
`DOE Contract Number:
`AC04-76DP00789
`
`OSTI ID:
`5905985
`
`Report Number(s):
`SAND-85-7022; ON: DE86008879
`
`https://www.osti.gov/biblio/5905985
`
`1/3
`
`Petitioner Canadian Solar Inc. - Ex. 1043, p. 1
`
`

`

`6/21/24, 8:28 PM
`Resource Relation:
`Other Information: Portions of this document are illegible in microche products. Original copy available until stock
`is exhausted
`
`SIPOS heterojunction contacts to silicon (Technical Report) | OSTI.GOV
`
`Country of Publication:
`United States
`
`Language:
`English
`
`Similar Records
`
`Silicon heterojunction transistor
`Journal Article
`·
` 1979
`·
` Appl. Phys. Lett.; (United States)
`OSTI ID: 5905985
`Matsushita, T; Oh-uchi, N; Hayashi, H;
`
`+1 more
`
`·
`
`Growth of wide band gap polycrystalline semi-insulating
`polycrystalline silicon
` Journal of Vacuum Science and
`·
`Journal Article
`·
` 1990
`Technology, B: Microelectronics Processing and Phenomena; (USA)
`OSTI ID: 5905985
`Sands, D; Brunson, K M; Spink, D M;
`
`+5 more
`
`·
`
`Evaluation of transition metal oxide as carrier-selective
`contacts for silicon heterojunction solar cells
`Conference
`·
` 2015
`·
` OSTI ID: 5905985
`Ding, L.; Boccard, Matthieu; Holman, Zachary;
`
`+1 more
`
`Related Subjects
`
`14 SOLAR ENERGY
`ELECTRIC CONTACTS
`FABRICATION
`PERFORMANCE
`SILICON OXIDES
`CHEMICAL VAPOR
`DEPOSITION
`SILICON SOLAR CELLS
`CRYSTAL DOPING
`CURRENT DENSITY
`EQUIVALENT CIRCUITS
`HETEROJUNCTIONS
`SILICON
`USES
`CHALCOGENIDES
`CHEMICAL COATING
`DEPOSITION
`DIRECT ENERGY CONVERTERS
`ELECTRICAL EQUIPMENT
`ELECTRONIC CIRCUITS
`ELEMENTS
`EQUIPMENT
`JUNCTIONS
`OXIDES
`
`https://www.osti.gov/biblio/5905985
`
`2/3
`
`Petitioner Canadian Solar Inc. - Ex. 1043, p. 2
`
`

`

`6/21/24, 8:28 PM
`
`SIPOS heterojunction contacts to silicon (Technical Report) | OSTI.GOV
`OXYGEN COMPOUNDS
`PHOTOELECTRIC CELLS
`PHOTOVOLTAIC CELLS
`SEMICONDUCTOR JUNCTIONS
`SEMIMETALS
`SILICON COMPOUNDS
`SOLAR CELLS
`SOLAR EQUIPMENT
`SURFACE COATING
`140501* - Solar Energy
`Conversion- Photovoltaic
`Conversion
`
`
`
`
`
` Website Policies / Important Links
`
`
`
`
`
` Contact Us
`
`
`
`Vulnerability Disclosure Program
`
`
`
`
`
`
`
`
`
`
`
`https://www.osti.gov/biblio/5905985
`
`3/3
`
`Petitioner Canadian Solar Inc. - Ex. 1043, p. 3
`
`