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`SIPOS Heterojunction contacts to silicon | IEEE Conference Publication | IEEE Xplore
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`Conferences > 1984 International Electron D...
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`SIPOS Heterojunction contacts to silicon
`Publisher: IEEE
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`Y.H. Kwark ; R. Sinton ; R.M. Swanson All Authors
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`Abstract:
`Using SIPOS films (SiO x , x < 2) as an emitter contact has been previously shown to reduce the emitter saturation
`current, J oe , by at least a factor of fifty when comp... View more
`
` Metadata
`Abstract:
`Using SIPOS films (SiO x , x < 2) as an emitter contact has been previously shown to reduce the emitter saturation
`current, J oe , by at least a factor of fifty when compared to a conventional emitter structure with a metallic contact.
`Previous attempts to explain this J oe reduction have focused on the bulk properties of the SIPOS films. Experimental
`-14
`2
`results of this study which attained J oe values of 2 × 10
` A/cm , suggest that an interfacial layer between the
`SIPOS and underlying silicon may play an important if not dominant, role with the implication that the high oxygen
`concentrations previously used may not be essential for J oe reduction. This would permit the use of lower oxygen
`content SIPOS films whose lower bulk resistivities would allow utilization of these films in structures such as scaled
`VLSI bipolar devices and high concentration point contact solar cells where series resistance is detrimental to device
`performance.
`
`Published in: 1984 International Electron Devices Meeting
`
`Date of Conference: 09-12 December 1984
`
`DOI: 10.1109/IEDM.1984.190832
`
`Date Added to IEEE Xplore: 09 August 2005
`
`Publisher: IEEE
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`Petitioner Canadian Solar Inc. - Ex. 1044, p. 1
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`SIPOS Heterojunction contacts to silicon | IEEE Conference Publication | IEEE Xplore
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`Conferences > 1984 International Electron D...
`
`SIPOS Heterojunction contacts to silicon
`Publisher: IEEE
`
`Cite This
`
`
`A
`
`lerts
`
`Manage Content Alerts
`Add to Citation Alerts
`
`
`
`Y.H. Kwark ; R. Sinton ; R.M. Swanson All Authors
`
`242
`Full
`Text Views
`
`1C
`
`ites in
`Patent
`
`25
`Cites in
`Papers
`
` D
`
`ownl
`
`
`Abstract:
`Using SIPOS films (SiO x , x < 2) as an emitter contact has been previously shown to reduce the emitter saturation
`current, J oe , by at least a factor of fifty when comp... View more
`
` Metadata
`Abstract:
`Using SIPOS films (SiO x , x < 2) as an emitter contact has been previously shown to reduce the emitter saturation
`current, J oe , by at least a factor of fifty when compared to a conventional emitter structure with a metallic contact.
`Previous attempts to explain this J oe reduction have focused on the bulk properties of the SIPOS films. Experimental
`-14
`2
`results of this study which attained J oe values of 2 × 10
` A/cm , suggest that an interfacial layer between the
`SIPOS and underlying silicon may play an important if not dominant, role with the implication that the high oxygen
`concentrations previously used may not be essential for J oe reduction. This would permit the use of lower oxygen
`content SIPOS films whose lower bulk resistivities would allow utilization of these films in structures such as scaled
`VLSI bipolar devices and high concentration point contact solar cells where series resistance is detrimental to device
`performance.
`
`Published in: 1984 International Electron Devices Meeting
`
`Date of Conference: 09-12 December 1984
`
`DOI: 10.1109/IEDM.1984.190832
`
`Date Added to IEEE Xplore: 09 August 2005
`
`Publisher: IEEE
`
`Abstract
`
`Authors
`
`References
`
`Citations
`
`Keywords
`
`Metrics
`
`More Like This
`
`https://ieeexplore.ieee.org/document/1484603
`
`1/4
`
`
`
`Petitioner Canadian Solar Inc. - Ex. 1044, p. 1
`
`
`
`6/21/24, 9:37 PM
`
`SIPOS Heterojunction contacts to silicon | IEEE Conference Publication | IEEE Xplore
`Conference Location: San Francisco, CA, USA
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`6/21/24, 9:37 PM
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`SIPOS Heterojunction contacts to silicon | IEEE Conference Publication | IEEE Xplore
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`Petitioner Canadian Solar Inc. - Ex. 1044, p. 3
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`SIPOS Heterojunction contacts to silicon | IEEE Conference Publication | IEEE Xplore
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