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`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell | IEEE Conference Publication …
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`Conferences > Proceedings of 1994 IEEE 1st ... 
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`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to
`emitter solar cell
`Publisher: IEEE
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`M. Lemiti ; B. Semmache ; Q.N. Le ; D. Barbier ; A. Laugier All Authors 
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`Abstract:
`This investigation was implemented in the framework of a novel all-low thermal budget polysilicon emitter solar cells
`fabrication technology. A comparative study of struc... View more
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`Abstract:
`This investigation was implemented in the framework of a novel all-low thermal budget polysilicon emitter solar cells
`fabrication technology. A comparative study of structural and electrical properties of thin silicon layers deposited by
`silane pyrolysis in a classical hot-wall furnace (LPCVD) and a cold-wall RTP reactor (RT-LPCVD) has been made.
`Deposition conditions and rapid thermal anneals were varied in order to improve the physical properties of RT-LPCVD
`polysilicon films. The structural properties have been characterized by means of grazing X-ray diffraction and cross-
`sectional TEM analysis. Sheet resistivity measurements performed on POCl/sub 3/-doped and subsequently rapid
`thermal annealed films showed the feasibility of low resistivity films particularly when the polysilicon layers are initially
`deposited in the amorphous state. Finally, RTCVD polysilicon emitter solar cells with various thicknesses were tested
`by spectral photo-response analysis.
`
`Published in: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint
`Conference of PVSC, PVSEC and PSEC)
`
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`1/5
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`
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`Petitioner Canadian Solar Inc. - Ex. 1046, p. 1
`
`

`

`6/21/24, 11:42 PM
`
`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell | IEEE Conference Publication …
`
`Date of Conference: 05-09 December 1994
`
`DOI: 10.1109/WCPEC.1994.520203
`
`Date Added to IEEE Xplore: 06 August 2002
`
`Publisher: IEEE
`
`Print ISBN:0-7803-1460-3
`
`Conference Location: Waikoloa, HI, USA
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`References is not available for this document.
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`1. P. Ashburn, IEEE. Trans. Electron Devices, vol. ED-31, no. 7, pp. 853-859, 1984.
`View Article  Google Scholar 
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`2. N. G. Tarr, "A polysilicon Emitter Solar Cell", IEEE Electron Device Letters, vol. EDL-6, no. 12, pp. 655-
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`View Article  Google Scholar 
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`J. Y. Gan, "Polysilicon emitters for silicon concentrator solar cell", IEEE Trans. Electron Devices, vol. ED-
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`View Article  Google Scholar 
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`4. G. Papadoulos, "Development of polysilicon emitter solar cell", EPVSEC. Lisbon-Portugal, pp. 27-30,
`1991.
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`5. D. Waechter, "Low-temperature crystallisation of in situ phosphorus-doped low pressure chemical
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`6. A. Kermani, "Single- wafer rapid thermal CVD technology for fabrication of MOS and bipolaire devices",
`ULSI Science technology Proc., vol. 11, pp. 566-573, 1991.
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`J. Nulman, Rapid thermal processing of thin Gate Dielectrics. Oxidation of Silicon, IEEE, vol. EDL-6, pp.
`205-207, 1985.
`Google Scholar 
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`8. H. Fukuda, "Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O
`ambient", Jpn. J. Appl. Phys., vol. 29, no. 12, pp. L2333-L2336, 1990.
`CrossRef  Google Scholar 
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`J. F Gibbons, "Limited reaction processiong: Silicon Epitaxy", Appl. Phys. Lett., vol. 47, no. 7, pp. 721-
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`CrossRef  Google Scholar 
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`10. N. A. Masnari, "Single wafer process integration for submicron structures", J. Vac. Sci. Technol., vol.
`B12, no. 14, pp. 2749-2751, 1994.
`CrossRef  Google Scholar 
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`https://ieeexplore.ieee.org/abstract/document/520203/references#citations
`
`2/5
`
`Petitioner Canadian Solar Inc. - Ex. 1046, p. 2
`
`

`

`6/21/24, 11:42 PM
`
`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell | IEEE Conference Publication …
`
`11. B. Semmache, "Radial control of the physical properties of RT-LPCVD polysilicon films deposited in a
`cylindrical cold wall reactor", Eur. Mat. Res. Soc. Symp. Proc., vol. 37, pp. 99-107, 1993.
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`J. Magarino, "Structural and electronic properties of CVD silicon", Eur. Mat. Res. Soc. Symp. Proc., pp.
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`13. M. C. Öztürck, "Low-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide by
`rapid thermal processing", Mat. Res. Soc. Symp. Proc., vol. 146, pp. 109-114, 1989.
`CrossRef  Google Scholar 
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`14. N. Gonon, "Optical and electrical characterization of ultra-thin oxide grown by rapid thermal processing
`in O2 or N2O", Microelectron. J., vol. 24, pp. 401-407, 1993.
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`15. Private communication.
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`16. B. Semmache, "Structural and electrical properties of polysilicon films deposited at 5 mbar in a RTP
`reactor", Semicond. Silicon., pp. 311-321, 1994.
`Google Scholar 
`
`17. A. J. Toprac, "Characterization of the silane surface reaction in the chemical vapor deposition of
`polysilicon in a cold wall rapid thermal system", Proceeding of the 3rd Int. Symp. on process physics
`modeling in semiconductor, vol. 6, pp. 337-345, 1993.
`Google Scholar 
`
`18. B. Semmache, "Growth and physical properties of RT-LPCVD polysilicon", Proceeding of the 1st Int.
`RTP. Conf., pp. 313-317, 1993.
`Google Scholar 
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`19. N. G. Tarr, "Rapid thermal annealing of polysilicon emitter solar cell", 11th E.C.P.S.E.C, pp. 434-436,
`1992.
`Google Scholar 
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`
`3/5
`
`Petitioner Canadian Solar Inc. - Ex. 1046, p. 3
`
`

`

`6/21/24, 11:42 PM
`
`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell | IEEE Conference Publication …
`
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`4/5
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`Petitioner Canadian Solar Inc. - Ex. 1046, p. 4
`
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`

`6/21/24, 11:42 PM
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`Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell | IEEE Conference Publication …
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`Petitioner Canadian Solar Inc. - Ex. 1046, p. 5
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