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`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P, Al or B | IEEE Conference Publication | IEEE Xplore
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`Conferences > Proceedings of 1994 IEEE 1st ...
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`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P,
`Al or B
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`B. Hartiti ; S. Sivoththaman ; R. Schindler ; J. Nijs ; J.C. Muller ; P. Siffert All Authors
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`Abstract:
`Rapid thermal processing (RTP) is now emerging as a promising simplified process for manufacturing of terrestrial
`solar cells in a continuous way. In earlier works, we ha... View more
`
` Metadata
`Abstract:
`Rapid thermal processing (RTP) is now emerging as a promising simplified process for manufacturing of terrestrial
`solar cells in a continuous way. In earlier works, we have shown that RTP can advantageously replace the classical
`furnace for performing emitter, BSF and surface passivation in addition to an efficient gettering of metallic impurities
`during these steps. In this work, we present results about co-diffusion of two dopant elements in a single rapid thermal
`cycle at low temperature in order to form emitter and BSF simultaneously. We have, in particular, found that the
`diffusion kinetics of dopant elements are enhanced during rapid thermal co-diffusion of P, Al or B and lead to the
`optimal dopant activity and profile for high efficiency silicon solar cells at low temperature. Additionally, the gettering
`effect induced by the co-diffusion of P and Al is more efficient than can be achieved by a single diffusion of these two
`elements. Finally, test solar cells were performed on these structures and gave, for a low processing temperature
`(800/spl deg/C/60 s), an efficiency of 11% on polished FZ monocrystalline substrates without antireflecting coating.
`
`Published in: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint
`Conference of PVSC, PVSEC and PSEC)
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`Abstract
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`Authors
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`https://ieeexplore.ieee.org/document/520502
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`Petitioner Canadian Solar Inc. - Ex. 1053, p. 1
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`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P, Al or B | IEEE Conference Publication | IEEE Xplore
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`Conferences > Proceedings of 1994 IEEE 1st ...
`
`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P,
`Al or B
`Publisher: IEEE
`
`Cite This
`
`
`A
`
`lerts
`
`Manage Content Alerts
`
`Add to Citation Alerts
`
`
`
`B. Hartiti ; S. Sivoththaman ; R. Schindler ; J. Nijs ; J.C. Muller ; P. Siffert All Authors
`
`69
`Full
`Text Views
`
`6C
`
`ites in
`Patents
`
`1C
`
`ites in
`Paper
`
` D
`
`ownl
`
`
`Abstract:
`Rapid thermal processing (RTP) is now emerging as a promising simplified process for manufacturing of terrestrial
`solar cells in a continuous way. In earlier works, we ha... View more
`
` Metadata
`Abstract:
`Rapid thermal processing (RTP) is now emerging as a promising simplified process for manufacturing of terrestrial
`solar cells in a continuous way. In earlier works, we have shown that RTP can advantageously replace the classical
`furnace for performing emitter, BSF and surface passivation in addition to an efficient gettering of metallic impurities
`during these steps. In this work, we present results about co-diffusion of two dopant elements in a single rapid thermal
`cycle at low temperature in order to form emitter and BSF simultaneously. We have, in particular, found that the
`diffusion kinetics of dopant elements are enhanced during rapid thermal co-diffusion of P, Al or B and lead to the
`optimal dopant activity and profile for high efficiency silicon solar cells at low temperature. Additionally, the gettering
`effect induced by the co-diffusion of P and Al is more efficient than can be achieved by a single diffusion of these two
`elements. Finally, test solar cells were performed on these structures and gave, for a low processing temperature
`(800/spl deg/C/60 s), an efficiency of 11% on polished FZ monocrystalline substrates without antireflecting coating.
`
`Published in: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint
`Conference of PVSC, PVSEC and PSEC)
`
`Abstract
`
`Authors
`
`References
`
`Citations
`
`Keywords
`
`Metrics
`
`More Like This
`
`https://ieeexplore.ieee.org/document/520502
`
`1/4
`
`
`
`Petitioner Canadian Solar Inc. - Ex. 1053, p. 1
`
`
`
`6/22/24, 2:38 PM
`
`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P, Al or B | IEEE Conference Publication | IEEE Xplore
`
`Date of Conference: 05-09 December 1994
`
`DOI: 10.1109/WCPEC.1994.520502
`
`Date Added to IEEE Xplore: 06 August 2002
`
`Publisher: IEEE
`
`Print ISBN:0-7803-1460-3
`
`Conference Location: Waikoloa, HI, USA
`
`Authors
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`More
`Like
`This
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`Rapid thermal processing: a comprehensive classification of silicon materials
`Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
`Published: 2002
`
`Passivation Effects on Low-Temperature Gettering in Multicrystalline Silicon
`IEEE Journal of Photovoltaics
`Published: 2017
`
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`https://ieeexplore.ieee.org/document/520502
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`2/4
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`Petitioner Canadian Solar Inc. - Ex. 1053, p. 2
`
`
`
`6/22/24, 2:38 PM
`
`Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P, Al or B | IEEE Conference Publication | IEEE Xplore
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`https://ieeexplore.ieee.org/document/520502
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`3/4
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`Petitioner Canadian Solar Inc. - Ex. 1053, p. 3
`
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`6/22/24, 2:38 PM
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`https://ieeexplore.ieee.org/document/520502
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`4/4
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`Petitioner Canadian Solar Inc. - Ex. 1053, p. 4
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