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`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation | IEEE Journals & Magazine | IEEE Xplore
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`Journals & Magazines > IEEE Transactions on Electron... > Volume: 45 Issue: 8 
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`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation
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`Abstract:
`For the first time, cells formed by rapid thermal processing (RTP) have resulted in 18%-efficient 1 and 4 cm/sup 2/
`single-crystal silicon solar cells. Front surface pass... View more
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`Abstract:
`For the first time, cells formed by rapid thermal processing (RTP) have resulted in 18%-efficient 1 and 4 cm/sup 2/
`single-crystal silicon solar cells. Front surface passivation by rapid thermal oxidation (RTO) significantly enhanced the
`short wavelength response and decreased the effective front surface recombination velocity (including contact effects)
`from 7.5/spl times/10/sup 5/ to about 2/spl times/10/sup 4//spl times/10/sup 4/ cm/s. This improvement resulted in an
`increase of about 1% (absolute) in energy conversion efficiency, up to 20 mV in V/sub ot/, and about 1 mA/cm/sup 2/ in
`J/sub sc/. These RTO-induced enhancements are shown to be consistent with model calculations. Since only 3 to 4
`min are required to simultaneously form the phosphorus emitter and aluminum back-surface-field (BSF) and 5 to 6 min
`are required for growing the RTO, this RTP/RTO process represents the fastest technology for diffusing and oxidizing
`/spl ges/18%-efficient solar cells. Both cycles incorporate an in situ anneal lasting about 1.5 min to preserve the
`minority carrier lifetime of lower quality materials such as dendritic-web and multicrystalline silicon. These high-
`efficiency cells confirmed that RTP results in equivalent performance to cells fabricated by conventional furnace
`processing (CFP). Detailed characterization and modeling reveals that because of RTO passivation of the front surface
`(which reduced J/sub 0c/ by nearly a factor of ten), these RTP/RTO cells have become base dominated (J/sub 0b//spl
`Gt/J/sub 0c/), and further improvement in cell efficiency is possible by a reduction in back surface recombination
`velocity (BSRV). Based upon model calculations, decreasing the BSRV to 200 cm/s is expected to give 20%-efficient
`RTP/RTO cells.
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`6/22/24, 3:37 PM
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`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation | IEEE Journals & Magazine | IEEE Xplore
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`Published in: IEEE Transactions on Electron Devices ( Volume: 45 , Issue: 8, August 1998)
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`Page(s): 1710 - 1716
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`Date of Publication: August 1998 
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` ISSN Information:
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`References is not available for this document.
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`DOI: 10.1109/16.704369
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`Publisher: IEEE
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`1. K. Mitchell, R. King, T. Jester and M. McGraw, "The reformation of Cz Si photovoltaics", Conf. Rec. 24th
`IEEE Photovoltaic Specialists Conf., pp. 1266-1269, 1994.
`View Article  Google Scholar 
`
`2.
`
`"Product information regarding the RTP solar cell furnace", high-throughput RTP solar cell processor
`model VS2400.
`Google Scholar 
`
`3. A. Usami, M. Ando, M. Tsunekane, K. Yamamoto, T. Wada and Y. Inoue, "Shallow junction formation for
`silicon solar cells by light-induced diffusion of phosphorus from a spin-on source", 18th Europ. Comm.
`Photovoltaic Sol. Energy Conf., pp. 797-803, 1985.
`Google Scholar 
`
`4. A. Usami, M. Tsunekane, T. Wada, Y. Inoue, S. Shimada, N. Nakazawa, et al., "New junction formation
`process for polycrystalline silicon solar cells by light induced diffusion from a spin-on source", 18th
`Europ. Comm. Photovoltaic Sol. Energy Conf., pp. 1078-1083, 1985.
`Google Scholar 
`
`5. R. Campbell and D Meier, "Simultaneous junction formation using a directed energy light source", J.
`Electrochem. Soc, vol. 133, no. 10, pp. 2210-2211, Oct. 1986.
`CrossRef  Google Scholar 
`
`6. B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert, B. Wagner, R. Schindler, et al., "Optical thermal processing for
`silicon solar cells", 11th Europ. Comm. Photovoltaic Sol. Energy Conf., pp. 420-422, 1992.
`View Article  Google Scholar 
`
`7. B. Hartiti, A. Slaoui, J.C. Muller and P. Siffert, "Multicrystalline silicon solar cells processed by rapid
`thermal processing", Conf. Record 23rd IEEE Photovoltaic Specialists Conf., pp. 224-228, 1993.
`View Article  Google Scholar 
`
`8. R. Schindler, I. Reis, B. Wagner, A. Eyer, H. Lautenschlager, C. Schetter, et al., "Rapid optical thermal
`processing of silicon solar cells", Conf. Record 23rd IEEE Photovoltaic Specialists Conf., pp. 162-166,
`1993.
`View Article  Google Scholar 
`
`9. S. Sivoththaman, W. Laureys, P. De Schepper, J. Nijs and R. Mertens, " Rapid thermal processing of
`conventionally and electromagnetically cast 100 \${hbox{cm}}^2\$ multicrystalline silicon ", Conf. Record
`
`https://ieeexplore.ieee.org/document/704369/references#references
`
`2/6
`
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`6/22/24, 3:37 PM
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`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation | IEEE Journals & Magazine | IEEE Xplore
`25th IEEE Photovoltaic Specialists Conference, pp. 621-624, 1996.
`View Article  Google Scholar 
`
`10. A. Rohatgi, P. Doshi, M. Ropp, L. Cai, W. A. Doolittle, S. Narasimha, et al., "Improved understanding
`and optimization of RTP and PECVD processes for high-efficiency silicon solar cells", 13th Europ.
`Comm. Photovoltaic Sol. Energy Conf., pp. 413-416, 1995.
`Google Scholar 
`
`11. P. Doshi, A. Rohatgi, M. Ropp, Z. Chen, D. Ruby and D. L. Meier, "Rapid thermal processing of high-
`efficiency silicon solar cells with controlled in-situ annealing", Sol. Energy Mater. Sol. Cells, vol. 41/42,
`pp. 31-39, July 1996.
`CrossRef  Google Scholar 
`
`12. A. Rohatgi, Z. Chen, P. Doshi, T. Pham and D. Ruby, "High-efficiency silicon solar cells by rapid thermal
`processing", Appl. Phys. Lett., vol. 65, no. 16, pp. 2087-2089, Oct. 1994.
`CrossRef  Google Scholar 
`
`13. P. Doshi, J. Mejia, K. Tate, S. Kamra, A. Rohatgi, S. Narayanan, et al., "High-efficiency Si solar cells by
`rapid thermal processing screen-printing and plasma-enhanced chemical vapor deposition", Conf.
`Record 25th IEEE Photovoltaic Specialists Conf., pp. 421-424, 1996.
`View Article  Google Scholar 
`
`14. D. E. Kane and R. M. Swanson, "Measurement of the emitter saturation current by a contactless
`photoconductivity decay method", Conf. Record 18th IEEE Photovoltaic Specialists Conf., pp. 578-583,
`1985.
`Google Scholar 
`
`15. P. Doshi, J. Mejia, K. Tate and A. Rohatgi, "Integration of screen-printing and rapid thermal processing
`technologies for silicon solar cell fabrication", IEEE Electron Device Lett., vol. 17, pp. 404-406, Aug.
`1996.
`View Article  Google Scholar 
`
`16. A. Cuevas, P. Basore, G. Giroult-Matlakowski and C. DuBois, "Surface recombinatin velocity and
`energy bandgap narrowing of highly doped n-type silicon", 13th Europ. Comm. Photovoltaic Sol.
`Energy Conf., pp. 337-342, 1995.
`Google Scholar 
`
`17. P. Doshi, G. E. Jellison and A. Rohatgi, Characterization and optimization of absorbing PECVD
`antireflection coatings for silicon photovoltaics, vol. 36, no. 30, pp. 7826-7837, Oct. 1997.
`Google Scholar 
`
`18. P. Basore and D. Clugston, "PC1D version 4 for Windows: from analysis to design", Conf. Record 25th
`IEEE Photovoltaic Specialists Conf., pp. 377-381, 1996.
`View Article  Google Scholar 
`
`19. D. Klaassen, J. Slotboom and H. C. de Graaf, Solid-State Electron., vol. 35, pp. 125-129, 1992.
`CrossRef  Google Scholar 
`
`20. A. Cuevas, G. Giroult-Matlakowski, P. Basore, C. DuBois and R. King, "Extraction of surface
`recombination velocity of passivated phosphorus-doped silicon emitters", Conf. Record 24th IEEE
`Photovoltaic Specialists Conf., pp. 1446-1449, 1994.
`View Article  Google Scholar 
`
`21. C. Wang and A. Neugroschel, "Minority-carrier transport parameters in degenerate n-type silicon", IEEE
`Electron Device Lett., vol. 11, pp. 576-578, Dec. 1990.
`View Article  Google Scholar 
`
`https://ieeexplore.ieee.org/document/704369/references#references
`
`3/6
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`Petitioner Canadian Solar Inc. - Ex. 1057, p. 3
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`6/22/24, 3:37 PM
`
`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation | IEEE Journals & Magazine | IEEE Xplore
`
`22. R. King, R. Sinton and R. Swanson, "Studies of diffused phosphorus emitters: saturation current
`surface recombination velocity and quantum efficiency", IEEE Trans. Electron Devices, vol. ED-37, pp.
`365-371, Feb. 1990.
`View Article  Google Scholar 
`
`23.
`
`J. Schmidt, T. Lauinger, A. Aberle and R. Hezel, "Record low surface recombination velocities on low-
`resistivity silicon solar cell substrates", Conf. Record 25th IEEE Photovoltaic Specialists Conf., pp. 413-
`416, 1996.
`View Article  Google Scholar 
`
`24. P. Basore, "Extended spectral response analysis of internal quantum efficiency", Conf. Record 23 IEEE
`Photovoltaic Specialists Conf., pp. 147-152, 1993.
`View Article  Google Scholar 
`
`25. P. Lo¨lgen, C. Leguijt, J. Eikelboom, R. Steeman, W. Sinke, L. Verhoef, et al., "Aluminum back-surface
`field doping profiles with surface recombination velocities below 200 cm/s", Conf. Record 23rd IEEE
`Photovoltaic Specialists Conf., pp. 236-242, 1993.
`View Article  Google Scholar 
`
`26. S. Narasimha, J. Mejia and A. Rohatgi, "Screen printed aluminum back surface fields for silicon solar
`cells", 6th Workshop Role of Impurities and Defects in Silicon Device Processing (NREL), pp. 255-259,
`Aug. 1996.
`View Article  Google Scholar 
`
`27. R. King, Studies of oxide-passivated emitters in silicon and applications to solar cells, 1990.
`Google Scholar 
`
`View More
`
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`Rapid thermal processing of conventionally and electromagnetically cast 100 cm/sup 2/ multicrystalline silicon
`Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996
`Published: 1996
`
`Rapid thermal processing of thin gate dielectrics. Oxidation of silicon
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`https://ieeexplore.ieee.org/document/704369/references#references
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`Petitioner Canadian Solar Inc. - Ex. 1057, p. 4
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`6/22/24, 3:37 PM
`18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation | IEEE Journals & Magazine | IEEE Xplore
`IEEE Electron Device Letters
`Published: 1985
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