UNITED STATES PATENT AND TRADEMARK OFFICE
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`HANWHA SOLUTIONS CORPORATION,
`
`Petitioner,
`
`v.
`
`MAXEON SOLAR PTE. LTD.,
`Patent Owner.
`
`Case No. IPR2024-01199
`U.S. Patent No. 8,878,053
`
`DECLARATION OF DR. ZACHARY HOLMAN REGARDING
`CLAIMS 1-20 OF U.S. PATENT NO. 8,878,053
`
`HANWHA 1003
`
`

`

`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
`
`
`
`
`Table of Contents
`INTRODUCTION ........................................................................................... 1 
`I. 
`QUALIFICATIONS AND EXPERIENCE ..................................................... 1 
`II. 
`III.  LEGAL PRINCIPLES ................................................................................... 11 
`A. 
`Scope of Opinion ................................................................................. 11 
`B. 
`Anticipation ......................................................................................... 12 
`C. 
`Obviousness ......................................................................................... 12 
`D. 
`Claim Dependency .............................................................................. 16 
`E.  Written Description ............................................................................. 16 
`IV.  MATERIALS CONSIDERED ...................................................................... 17 
`V. 
`PRIORITY DATE ......................................................................................... 17 
`VI.  LEVEL OF ORDINARY SKILL IN THE ART ........................................... 17 
`VII.  TECHNOLOGY BACKGROUND ............................................................... 19 
`A.  Overview of Solar Cells ...................................................................... 19 
`1. 
`Doping ....................................................................................... 21 
`2. 
`PN Junction ............................................................................... 30 
`3.  Metal Contacts .......................................................................... 37 
`4. 
`Texturing and Anti-reflection Coating ..................................... 40 
`Overview of Solar Cell Efficiency ...................................................... 44 
`B. 
`VIII.  OVERVIEW OF THE ’053 PATENT .......................................................... 53 
`A. 
`Summary of the ’053 Patent ................................................................ 53 
`B. 
`Prosecution History ............................................................................. 58 
`C. 
`Prosecution History of Related Application ....................................... 62 
`IX.  CLAIM CONSTRUCTION .......................................................................... 63 
`X.  OVERVIEW OF THE PRIOR ART ............................................................. 65 
`A. 
`Froitzheim ........................................................................................... 65 
`B. 
`Gan ...................................................................................................... 67 
`C. 
`Smith.................................................................................................... 70 
`D. 
`Li .......................................................................................................... 74 
`– i –
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`4. 
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`5. 
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`XI.  GROUNDS FOR FINDING THE CHALLENGED CLAIMS INVALID ... 76 
`A.  Ground I: Claims 9-12, 14, and 16-20 Are Invalid as Obvious over
`Froitzheim and Gan ............................................................................. 76 
`1.  Motivation to Combine ............................................................. 76 
`2. 
`Claim 9 ...................................................................................... 97 
`3. 
`Claim 10: The method of claim 9 wherein the first dopant
`source layer comprises P-type dopants. ..................................109 
`Claim 11: The method of claim 9 wherein the first dopant
`source layer comprises borosilicate glass. ..............................109 
`Claim 12: The method of claim 9 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................112 
`Claim 14: The method of claim 9 further comprising: texturing
`the front surface of the silicon substrate; and forming an
`antireflective layer over the textured front surface of the silicon
`substrate. .................................................................................114 
`Claim 16 ..................................................................................118 
`Claim 17: The method of claim 16 wherein diffusing dopants
`into the layer of polysilicon to form the backside junction with
`the silicon substrate comprises: forming a first dopant source
`layer over the layer of polysilicon; and diffusing dopants from
`the first dopant source layer into the layer of polysilicon. .....121 
`Claim 18: The method of claim 16 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................122 
`10.  Claim 19: The method of claim 16 further comprising: texturing
`the front surface of the silicon substrate. ................................122 
`11.  Claim 20: The method of claim 19 further comprising: forming
`an antireflective layer over the textured front surface of the
`silicon substrate. ......................................................................123 
`
`6. 
`
`7. 
`8. 
`
`9. 
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`B. 
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`4. 
`
`5. 
`
`6. 
`
`7. 
`
`8. 
`
`Ground II: Claims 1-20 Are Invalid as Obvious over Froitzheim, Gan,
`and Smith ...........................................................................................123 
`1.  Motivation to Combine ...........................................................123 
`2. 
`Claim 9 ....................................................................................135 
`3. 
`Claim 10: The method of claim 9 wherein the first dopant
`source layer comprises P-type dopants. ..................................140 
`Claim 11: The method of claim 9 wherein the first dopant
`source layer comprises borosilicate glass. ..............................141 
`Claim 12: The method of claim 9 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................142 
`Claim 13: The method of claim 12 wherein the second dopant
`source layer comprises phosphorus doped silicon dioxide. ....146 
`Claim 14: The method of claim 9 further comprising: texturing
`the front surface of the silicon substrate; and forming an
`antireflective layer over the textured front surface of the silicon
`substrate. .................................................................................146 
`Claim 15: The method of claim 9 wherein the diffusion of
`dopants from the first dopant source layer to the layer of
`polysilicon and the diffusion of dopants into the front surface of
`the silicon substrate are performed in situ. .............................149 
`Claim 16 ..................................................................................154 
`9. 
`10.  Claim 17: The method of claim 16 wherein diffusing dopants
`into the layer of polysilicon to form the backside junction with
`the silicon substrate comprises: forming a first dopant source
`layer over the layer of polysilicon; and diffusing dopants from
`the first dopant source layer into the layer of polysilicon. .....156 
`11.  Claim 18: The method of claim 16 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................156 
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`12.  Claim 19: The method of claim 16 further comprising: texturing
`the front surface of the silicon substrate. ................................157 
`13.  Claim 20: The method of claim 19 further comprising: forming
`an antireflective layer over the textured front surface of the
`silicon substrate. ......................................................................157 
`14.  Claim 1 ....................................................................................158 
`15.  Claim 2: The method of claim 1 wherein the P-type dopant
`source comprises borosilicate glass. .......................................162 
`16.  Claim 3: The method of claim 1 wherein diffusing N-type
`dopants into the front surface of the N-type silicon substrate
`includes forming an N-type dopant source over the N-type
`silicon substrate and diffusing N-type dopants from the N-type
`dopants source into the N-type silicon substrate. ...................163 
`17.  Claim 4: The method of claim 3 wherein the N-type dopant
`source comprises phosphorus doped silicon dioxide. .............163 
`18.  Claim 5: The method of claim 1 further comprising: texturing
`the front surface of the N-type silicon substrate; and forming an
`antireflective layer over the textured front surface of the N-type
`silicon substrate. ......................................................................163 
`19.  Claim 6: The method of claim 5 wherein the antireflective layer
`comprises silicon nitride. ........................................................164 
`20.  Claim 7: The method of claim 1 wherein the diffusion of P-type
`dopants from the P-type dopant source to the layer of
`polysilicon and the diffusion of N-type dopants into the front
`surface of the N-type silicon substrate are performed in situ. 164 
`21.  Claim 8: The method of claim 1 wherein the capping layer
`comprises undoped silicon dioxide. ........................................166 
`Ground III: Claims 9-20 Are Invalid as Obvious over Li, Gan, and
`Smith..................................................................................................166 
`1.  Motivation to Combine ...........................................................167 
`2. 
`Claim 9 ....................................................................................174 
`3. 
`Claim 10: The method of claim 9 wherein the first dopant
`source layer comprises P-type dopants. ..................................185 
`
`– iv –
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`C. 
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`4. 
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`5. 
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`6. 
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`7. 
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`8. 
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`
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`Claim 11: The method of claim 9 wherein the first dopant
`source layer comprises borosilicate glass. ..............................185 
`Claim 12: The method of claim 9 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................186 
`Claim 13: The method of claim 12 wherein the second dopant
`source layer comprises phosphorus doped silicon dioxide. ....187 
`Claim 14: The method of claim 9 further comprising: texturing
`the front surface of the silicon substrate; and forming an
`antireflective layer over the textured front surface of the silicon
`substrate. .................................................................................188 
`Claim 15: The method of claim 9 wherein the diffusion of
`dopants from the first dopant source layer to the layer of
`polysilicon and the diffusion of dopants into the front surface of
`the silicon substrate are performed in situ. .............................191 
`Claim 16 ..................................................................................192 
`9. 
`10.  Claim 17: The method of claim 16 wherein diffusing dopants
`into the layer of polysilicon to form the backside junction with
`the silicon substrate comprises: forming a first dopant source
`layer over the layer of polysilicon; and diffusing dopants from
`the first dopant source layer into the layer of polysilicon. .....195 
`11.  Claim 18: The method of claim 16 wherein diffusing dopants
`into the front surface of the silicon substrate comprises forming
`a second dopant source layer over the silicon substrate and
`diffusing dopants from the second dopant source layer into the
`silicon substrate. ......................................................................195 
`12.  Claim 19: The method of claim 16 further comprising: texturing
`the front surface of the silicon substrate. ................................196 
`13.  Claim 20: The method of claim 19 further comprising: forming
`an antireflective layer over the textured front surface of the
`silicon substrate. ......................................................................196 
`XII.  SECONDARY CONSIDERATIONS ......................................................... 197 
`XIII.  AVAILABILITY FOR CROSS EXAMINATION ..................................... 197 
`– v –
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`XIV.  RIGHT TO SUPPLEMENT ........................................................................ 198 
`XV.  JURAT ......................................................................................................... 198 
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`I, Zachary Charles Holman, Ph.D., declare as follows:
`I.
`INTRODUCTION
`1. My name is Zachary Charles Holman.
`
`
`
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
`
`2.
`
`I am making this declaration at the request of Hanwha Solutions
`
`Corporation (“HSC” or “Petitioner”) as an independent expert consultant in this
`
`proceeding before the United States Patent and Trademark Office and to provide
`
`testimony pertinent to Petitioner’s Petition for Inter Partes Review of U.S. Patent
`
`No. 8,878,053 (“’053 patent”). I understand that Petitioner is challenging the
`
`patentability of claims 1-20 of the ’053 patent (“Challenged Claims”).
`
`II. QUALIFICATIONS AND EXPERIENCE
`3.
`I have been involved in the field of solar cell technology for over 19
`
`years. My qualifications for forming the opinions set forth in this declaration are
`
`summarized below. Attached as Appendix A is my curriculum vitae, which
`
`describes my education, experience, and professional activities and lists, among
`
`other things, my publications and patents.
`
`4.
`
`I received a Bachelor of Arts in Physics from Reed College in 2005.
`
`While pursuing my undergraduate degree, I researched the movement of electrons
`
`in semiconductor materials used for solar cells. My research was summarized in my
`
`undergraduate thesis, which was titled Electron Transport in Amorphous Silicon.
`
`My thesis explained how “[m]any mechanisms reduce the output of a solar cell
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`including imperfect incident light absorption, recombination of charge carriers, and
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`poor charge transport through the cells,” and it described research that I conducted
`
`using time-of-flight measurement techniques to characterize electron transport in
`
`hydrogenated amorphous silicon. See Ex.1010-Holman-Thesis, 2-4. My thesis
`
`revealed trapping of electrons in defect states in amorphous silicon, which inhibited
`
`their collection at metal contacts. See generally, Ex.1010-Holman-Thesis.
`
`5.
`
`I received a Doctor of Philosophy (“Ph.D.”) in Mechanical Engineering
`
`from the University of Minnesota in 2010. I started my Ph.D. program in September
`
`2005. For the entire duration of my Ph.D., my research focused on the design,
`
`manufacture, and characterization of materials and layers used in solar cells. My
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`Ph.D. thesis was titled Germanium Nanocrystal Solar Cells, and it described the use
`
`of thin films of plasma-synthesized germanium and silicon nanocrystals and their
`
`use in novel solar cells.
`
`6.
`
`I co-authored multiple academic papers in the fields of semiconductor
`
`materials and solar cell technology while I was working on my Ph.D., including: A.
`
`LaLonde, Z Holman, et al., “Metal Coatings on SiC Nanowires by Plasma-enhanced
`
`Chemical Vapor Deposition,” Journal of Materials Research 20, 549 (2005)
`
`(describing method for coating silicon carbide nanowires with metal nanoparticles);
`
`R. Gresback, Z. Holman, and U. Kortshagen, “Plasma Synthesis of Highly
`
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`Monodisperse Ge Nanocrystals and Self-assembly of Dense Nanocrystal Layers,”
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`Materials Research Society Symposium Proceedings 974 (2007) (describing
`
`synthesis method for germanium nanocrystals using low pressure, nonthermal
`
`plasma); Z. Holman, R. Gresback, and U. Kortshagen, “Nonthermal Plasma
`
`Synthesis of Conductive Germanium Nanocrystal Films for Photovoltaic
`
`Applications,” ISPC-18 Proc. (2007) (describing the nonthermal plasma synthesis
`
`of germanium nanocrystals and reporting on the current-voltage measurements of
`
`highly porous films of such nanocrystals); R. Gresback, Z. Holman, and U.
`
`Kortshagen, “Nonthermal Plasma Synthesis of Size-Controlled, Monodisperse,
`
`Freestanding Germanium Nanocrystals,” Applied Physics Letters 91, 093119 (2007)
`
`(describing the synthesis of monodisperse germanium nanocrystals via a nonthermal
`
`plasma approach); U. Kortshagen, Z. Holman, et al., “Plasma synthesis of group IV
`
`quantum dots for luminescence and photovoltaic applications,” Pure and Applied
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`Chemistry 80, 1901 (2008) (describing the application of silicon and germanium
`
`nanocrystals in solar cells); C.Y. Liu, Z. Holman, and U. Kortshagen, “Hybrid solar
`
`cells from P3HT and silicon nanocrystals” Nano Letters 9, 449 (2009) (describing a
`
`new solar cell comprised of silicon nanocrystals and poly-3(hexylthiophene) and
`
`reporting the properties of such cells); C.Y. Liu, Z. Holman, and U. Kortshagen,
`
`“Optimization of Si NC/P3HT hybrid solar cells,” Advanced Functional Materials
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`20, 2157 (2010), and X. Pi, Z. Holman, and U. Kortshagen, “Silicon and Germanium
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`Nanocrystal Inks for Low Cost Solar Cells,” 4th International Conference on Energy
`
`Sustainability ASME Conf. Proc. 2, 471 (2010) (presenting method for forming
`
`silicon and germanium thin films using nanocrystals).
`
`7.
`
`From 2010 to 2013, I was a postdoctoral researcher in the Photovoltaics
`
`and Thin-Film Electronics Laboratory at the Institute of Microengineering at Ecole
`
`Polytechnique Fédérale de Lausanne in Neuchâtel, Switzerland. I also served as a
`
`visiting professor with the Photovoltaics and Thin-Film Electronics Laboratory in
`
`2014. While serving in these roles, I continued to research the design and
`
`manufacture of solar cells and their components.
`
`8. While a postdoctoral researcher, I published extensively on silicon solar
`
`cells, including on passivation layers, transparent conductive oxide and metal
`
`contacts, contact resistance, parasitic absorption, and optimization of cell designs.
`
`Select peer-reviewed papers related to silicon solar cells that I co-authored while a
`
`postdoctoral researcher include: A. Descoeudres, Z. Holman, et al., “Improved
`
`amorphous/crystalline silicon interface passivation by hydrogen plasma treatment,”
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`Applied Physics Letters 99, 123506 (2011) (describing reducing recombination at
`
`silicon wafer surfaces with deposited amorphous silicon layers); Z. Holman, et al.,
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`“Current losses at the front of silicon heterojunction solar cells,” IEEE Journal of
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`Photovoltaics 2, 7 (2012) (describing parasitic absorption in deposited emitters at
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`the front of silicon solar cells); S. De Wolf, Z. Holman, et al., “High-efficiency
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`silicon heterojunction solar cells: A review,” Green 2, 7 (2012) (reviewing the status
`
`of silicon heterojunction solar cell science and technology); Z. Holman, et al.,
`
`“Infrared light management in high-efficiency silicon heterojunction and rear-
`
`passivated solar cells,” Journal of Applied Physics 113, 013107 (2013) (describing
`
`parasitic absorption in electrodes of silicon solar cells); and Z. Holman, et al.,
`
`“Record infrared internal quantum efficiency in silicon heterojunction solar cells
`
`with dielectric/metal rear reflectors,” IEEE Journal of Photovoltaics 3, 1243 (2013)
`
`(reporting a design for a silicon solar cell with record rear reflectance).
`
`9.
`
`From 2013 to 2019, I was Assistant Professor in the School of
`
`Electrical, Computer and Energy Engineering at Arizona State University in Tempe,
`
`Arizona. In 2019, I became an Associate Professor, and, in 2023, I became a
`
`Professor, both again in the School of Electrical, Computer and Energy Engineering
`
`at Arizona State University. From 2019 to 2023, I also served as Director of Faculty
`
`Entrepreneurship in the Ira A. Fulton Schools of Engineering at Arizona State
`
`University. Since 2023, I have served as the Vice Dean for Research and Innovation
`
`of the Ira A. Fulton Schools of Engineering at Arizona State University.
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`10. My research interests as a professor include, among other things,
`
`contacts to solar cells, interconnection of solar cells, light management in silicon
`
`solar cells, and silicon-based tandem solar cells. While at Arizona State University,
`
`I have co-authored dozens of peer-reviewed articles in the field of solar cell
`
`technology, including: M. Boccard and Z. Holman, “Amorphous silicon carbide
`
`passivating layers for crystalline-silicon-based heterojunction solar cells,” Journal
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`of Applied Physics 118, 065704 (2015) (describing passivation layers for silicon
`
`solar cells); Y. Zhao, Z. Holman, et al., “Monocrystalline CdTe solar cells with open-
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`circuit voltage over 1 V and efficiency of 17%,” Nature Energy 1, 16067 (2016)
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`(reporting the highest open-circuit voltage measured for a cadmium telluride solar
`
`cell, made by using an emitter from silicon solar technology); Z. Yu, M. Leilaeioun,
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`and Z. Holman, “Selecting tandem partners for silicon solar cells using spectral
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`efficiency,” Nature Energy 1, 16137 (2016) (describing a methodology for designing
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`tandem solar cells); K. Bush, Z. Holman, et al., “23.6%-efficient monolithic
`
`perovskite/silicon tandem solar cells with improved stability,” Nature Energy 2,
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`17009 (2017) (describing improved perovskite/silicon tandem solar cells); B.
`
`Hallam, Z. Holman, et al., “Pre-fabrication gettering and hydrogenation treatments
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`for silicon heterojunction solar cells: A possible path to >700 mV open-circuit
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`voltages using low-lifetime commercial-grade p-type Czochralski silicon,” Solar
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`RRL 1700221 (2018) (describing improvement of silicon solar cells through
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`gettering and hydrogenation); Z. Ni, Z. Holman, et al., “Resolving Spatial and
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`Energetic Distributions of Trap States in Metal Halide Perovskite Solar Cells,”
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`Science 367, 1352 (2020) (reporting on the spatial and energetic distributions of trap
`
`states in metal halide perovskite single-crystalline and polycrystalline solar cells.);
`
`J. Xu, Z. Holman, et al., “Triple-halide Wide–band Gap Perovskites with Suppressed
`
`Phase Segregation for Efficient Tandems,” Science 367, 1097 (2020) (describing
`
`efficient wide–band gap perovskite top cells using triple-halide alloys); and K. Chen
`
`et al., “Self-aligned selective area front contacts on poly-Si/SiOx passivating contact
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`c-Si solar cells,” IEEE Journal of Photovoltaics 12, 678 (2022) (describing a method
`
`to pattern polycrystalline silicon / silicon dioxide layers in silicon solar cells).
`
`Additional journal articles, book chapters, and conference papers are described in
`
`further detail in my CV (Appendix A).
`
`11.
`
`I have received numerous awards for both my teaching and research.
`
`For my teaching, I have been honored with the ASU Fulton Schools of Engineering
`
`Top 5% Teaching Award in 2023, 2017, and 2015. For my research, I have received
`
`the IEEE Stuart R. Wenham Young Professionals Award in 2019 and the NSF
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`CAREER Award in 2019 (an award given to photovoltaic researchers), among other
`
`honors, prizes, and awards. My awards and honors are listed in my CV. I have also
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`received numerous research grants, as detailed in my CV, including eighteen grants
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`from the Department of Energy’s Solar Energy Technologies Office. Two
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`exemplary grants are “Development of new metallization pastes for front-side tunnel
`
`oxide passivated contact crystalline silicon solar cells” and “ASU-NREL joint
`
`silicon solar cell research: passivated contacts, metallization, and bulk defects.”
`
`12. Among the courses I teach at Arizona State University are “Electrical
`
`Engineering 465/591: Photovoltaic Energy Conversion,” “Electrical Engineering:
`
`498/591: Solar Energy,” and “Electrical Engineering 565: Solar Cells.” I have also
`
`taught innovation and venture development courses that combine academic learning
`
`with an applied business development approach. Other courses I have taught are
`
`listed in my CV.
`
`13.
`
`I have advised numerous doctoral students and other researchers in
`
`training. Students whom I have advised have won numerous honors and awards,
`
`including many best-paper awards at top solar conferences. A full list of students I
`
`have advised and their awards are provided in my CV.
`
`14. Some of my many professional activities include being editor of the
`
`IEEE Journal of Photovoltaics since 2022; serving as an organizing member for the
`
`IEEE Photovoltaic Specialists Conference, World Conference on Photovoltaic
`
`Energy Conversion, and International Workshop on Silicon Heterojunction Solar
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`Cells; serving as a member and chair of the ASU Solar Fabrication Core Facility
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`Board since 2020; being a reviewer for journals including Journal of Applied
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`Physics, ACS Nano, Solar Energy Materials and Solar Cells, Thin Solid Films,
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`Nanotechnology, and IEEE Journal of Photovoltaics; being a reviewer for grant
`
`proposals for the Department of Energy and the National Science Foundation; and
`
`serving as a session chair for numerous symposia and conferences on solar science
`
`and technology. A full list of my professional and outreach activities is provided in
`
`my CV.
`
`15. My research, engineering and entrepreneurial endeavors have been
`
`regularly recognized by the industry. For example, Arizona PBS has reported on
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`one of my start-up companies, SunFlex Solar, which has developed an improved
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`method for interconnecting back-contact solar cells into solar modules. See “New
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`Solar Panel Technology,” Arizona PBS (Mar. 29, 2023), available at
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`https://azpbs.org/horizon/2023/03/new-solar-panel-technology. Also, I worked
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`with two United States-based solar cell manufacturers relating to an instrument that
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`I developed to analyze recombination in solar cells; copies of the instrument are now
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`used in their research and development facilities. As another example, my research
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`demonstrating a manufacturing technique for high-efficiency perovskite-silicon
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`tandem solar cell was covered in PV Magazine, a leading solar cell industry
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`publication. See Emilliano Bellini, “New Manufacturing Technique for 26%-
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`efficient Tandem Perovskite Solar Cell,” PV Magazine (Apr. 20, 2020), available at
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`https://www.pv-magazine.com/2020/04/20/new-manufacturing-technique-for-26-
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`efficient-tandem-perovskite-solar-cell.
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`16.
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`I am also an entrepreneur and have founded three companies to bring
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`new solar technology to market. In 2021, I co-founded Beyond Silicon, Inc.
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`(“Beyond Silicon”), which is developing perovskite/silicon tandem solar cells.
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`Beyond Silicon was a finalist for the American-Made Perovskite Startup Prize. In
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`2020, I co-founded SunFlex Solar LLC (“SunFlex Solar”), which develops
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`interconnected back-contact solar cells using aluminum foil for improved efficiency
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`and durability. SunFlex Solar won the American-Made Solar Prize and has a
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`partnership with a US solar panel manufacturer to commercialize its interconnection
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`technology. In 2016, I co-founded Swift Coat, Inc. (“Swift Coat”), which has
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`developed a transparent coating for solar panels that prevents dust buildup that
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`would otherwise reduce solar panel efficiency. Swift Coat has also won a contract
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`from NASA to deposit similar coatings—but modified to provide an anti-fogging
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`functionality—on the inside of the helmet of NASA’s next generation xEMU space
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`suit. In 2018, I received the Gordon and Betty Moore Foundation Inventor
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`Fellowship to support my efforts to accelerate the translation of my research to
`
`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
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`market.
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`17.
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`I am being compensated for my work on this matter at my standard
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`hourly consulting rate of $500 per hour. My opinions are based on my own views
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`and understanding of the prior art, the knowledge of a person of ordinary skill in the
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`art, and the ’053 patent. My compensation is not dependent on and in no way affects
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`the substance of my statements, opinions, or conclusions in this declaration and it is
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`also not dependent on any testimony I give or on the outcome of this proceeding.
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`18.
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`I have no financial interest in Petitioner or Patent Owner. I similarly
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`have no financial interest in the ’053 patent, and I have had no contact with the
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`named inventors of the ’053 patent.
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`III. LEGAL PRINCIPLES
`19.
`I am not an attorney. For the purposes of this declaration, I have been
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`informed about certain aspects of the law that are relevant to my opinions. My
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`understanding of the law was provided to me by Petitioner’s attorneys.
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`A.
`20.
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`Scope of Opinion
`I have been informed and understand that the petitioner in an inter
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`partes review may request cancellation of claims as unpatentable only on grounds
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`that such claims are anticipated or would have been obvious to a person of ordinary
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`skill in the art at the time of the purported invention, and only on the basis of prior
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`U.S. Patent No. 8,878,053
`Declaration of Dr. Zachary Holman
`Case No. IPR2024-01199
`
`
`
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`art consisting of patents and/or printed publications. My opinions in this matter
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`address only such grounds.
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`B. Anticipation
`21.
`I have been informed that a patent claim is anticipated and therefore
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`unpatentable if every element of the claim is present in a single prior art reference.
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`C. Obviousness
`22.
`I understand that a claim is unpatentable if, at the time the alleged
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`invention was made, it would have been obvious to a person of ordinary skill in the
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`art. I understand that a claim can be obvious based on the teachings or suggestions
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`of either a single prior art reference or a combination of two or more prior art
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`references. I understand that the obviousness analysis requires an understanding of
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`the scope and content of the prior art, any differences between the prior art and the
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`alleged invention, and the level of ordinary skill in evaluating the pertinent art.
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`23.
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`I understand that in order to be considered for obviousness,