DECLARATION OF FRANK MCGEE
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`I, Frank McGee, pursuant to 28 U.S.C. § 1746 and 37 C.F.R. § 1.68, hereby declare as
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`follows:
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`1.
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`2.
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`I am a Translator for Sun IP.
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`I submit this declaration to certify the accuracy of the English translation of
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`Okayasu & Sagawa, BSF-Type Solar Cell Production Method, JP Patent App. H07-106611 (Apr.
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`21, 1995).
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`3.
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`I am qualified to perform Japanese to English translations and certify the accuracy
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`of Japanese to English translations.
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`4.
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`My statements are based on personal knowledge and my review of Okayasu &
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`Sagawa, BSF-Type Solar Cell Production Method, JP Patent App. H07-106611 (Apr. 21, 1995)
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`and its Japanese to English translation. If called as a witness about the facts contained in these
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`statements, I could testify competently based on such personal knowledge and the investigation I
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`have conducted.
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`5.
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`Attached as Exhibit A is a true and accurate copy of Okayasu & Sagawa, BSF-
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`Type Solar Cell Production Method, JP Patent App. H07-106611 (Apr. 21, 1995).
`
`6.
`
`Attached as Exhibit B is a true and accurate copy of an English translation of
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`Okayasu & Sagawa, BSF-Type Solar Cell Production Method, JP Patent App. H07-106611 (Apr.
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`21, 1995) (hereinafter “Okayasu Translation”), which I translated based on Exhibit A and my
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`personal knowledge of the Japanese and English languages.
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`7.
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`Okayasu Translation is, to the best of my knowledge and ability, a true and
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`accurate translation of Okayasu & Sagawa, BSF-Type Solar Cell Production Method, JP Patent
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`App. H07-106611 (Apr. 21, 1995).
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`- 1 -
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`HANWHA 1032
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`8.
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`All statements made herein of my own knowledge are true, and all statements
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`made on information and belief are believed to be true.
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`9.
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`I have been warned and am aware that these statements are made with the
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`knowledge that willful false statements and the like so made are punishable by fine or
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`imprisonment, or both, under 18 U.S.C. § 1001.
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`10.
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`I understand that by submitting this declaration I may be asked to appear for a
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`deposition asking me questions limited to the material in my declaration. With my signature
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`below, I agree to make reasonable efforts to make myself available for such a deposition at a
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`reasonable place and time.
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`* * *
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`
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`I declare under the penalty of perjury that the foregoing is true and correct. Executed on
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`July 23, 2024, in New Hampshire, United States.
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`___________________________
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`Frank McGee
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`
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`- 2 -
`
`

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`
`EXHIBIT A
`EXHIBIT A
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`

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`
`

`

`
`
`EXHIBIT B
`EXHIBIT B
`
`

`

`(12) Gazette of Unexamined
`Patent Applications (A)
`
`(11) Publication Number
`H07-106611
`
`Int. Ref. Nos.
`
`7376-4M
`
`
`
`
`
`(43) Publication Date April 21, 1995
`
`
`FI
`
`
`
`Theme Codes (Ref.)
`
`H01L 31/04
`
`A
`
`(19) Japan Patent Office (JP)
`
`
`
`(51) Int.Cl.6
`H01L 31/04
`
`
`
`
`ID Codes
`
`
`
`
`
`
`
`
`
`Examination Request Not Yet Received No. of Claims 5 OL (Total of 10 Pages)
`
`
`(71) Applicant
` 390022998
` Tonen Corporation
` 1-1-1, Hitotsubashi, Chiyoda-ku, Tokyo
`(72) Inventor
` Yasunori SAGAWA
` Tonen Corporation, Research &
` Development Center, 1-3-1,
` Nishitsurugaoka, Oi-machi, Irima-gun,
` Saitama-ken
`(72) Inventor
` Yoshinori OKAYASU
` Tonen Corporation, Research &
` Development Center, 1-3-1,
` Nishitsurugaoka, Oi-machi, Irima-gun,
` Saitama-ken
`(74) Agent
` Attorney Kohei KUBOTA (and 1 other)
`
`
`
`
`
`
`
`
`
`(21) Application No. H05-243040
`(22) Filing Date September 29, 1993
`
`
`
`(54) [Title of the Invention]
`BSF-Type Solar Cell Production Method
`(57) [Abstract]
`[Problem]
`To provide a method that enables the stable
`production of BSF-type solar cells with high
`photoelectric conversion efficiency.
`[Solution]
`Provided is a method for producing a BSF-type
`solar cell comprising an n- single crystal silicon
`(Si) substrate 1, a p-type poly-Si layer 2 on the
`light-entering side of the substrate, and an n+
`poly-Si layer 5 on the opposite side forming an HL
`junction with the Si substrate, the method
`characterized by forming the n+ poly-Si layer by
`thermal CVD using B2H6/SiH4/SiF4 as a feedstock
`gas. Because the production of suspended
`particles in the film-forming chamber can be
`prevented despite the use of halogen atom-
`emitting SiF4 and
`the substrate heating
`temperature can be reduced despite the use of
`thermal CVD, this method improves the film
`quality of the n+ poly-Si layer and enables the
`stable production of BSF-type solar cells with high
`photoelectric conversion efficiency.
`
`
`

`

`
`
`[Claims]
`[Claim 1] A method for producing a BSF-type
`solar cell provided with an n-type or p-type
`silicon substrate, a p-type or n-type silicon layer
`provided on the light-entering side of the silicon
`substrate and forming a p-n junction with the
`silicon substrate, and an n+ or p+ silicon layer
`provided on the opposite side of the silicon
`substrate and forming an HL junction with the
`silicon substrate,
`the method comprising
`supplying a film-forming gas containing silicon
`atoms, SiF4 gas, and an n-type or p-type dopant
`gas to a film-forming chamber in which an n-
`type or p-type silicon substrate has been
`arranged, and thermally decomposing the
`supplied gas in the vicinity of the heated silicon
`substrate while allowing the fluorine radicals
`generated by the reaction between the radical
`component of the thermally decomposed film-
`forming gas and the SiF4 gas to act as etching
`components to form an n+ or p+ silicon layer on
`the n-type or p-type silicon substrate surface.
`[Claim 2] A method for producing a BSF-type
`solar cell provided with a n-type or p-type silicon
`substrate, a p-type or n-type silicon layer
`provided on the light-entering side of the silicon
`substrate and forming a p-n junction with the
`silicon substrate, and an n+ or p+ silicon layer
`provided on the opposite side of the silicon
`substrate and forming an HL junction with the
`silicon substrate,
`the method comprising
`supplying a
`film-forming gas
`consisting
`primarily of silicon hydride and fluorinated
`silane gas represented by SiHmF4-m (where m is
`1 to 3) and an n-type or p-type dopant gas to a
`film-forming chamber in which an n-type or p-
`type silicon substrate has been arranged, and
`thermally decomposing the supplied gas in the
`vicinity of the heated silicon substrate while
`allowing the fluorinated radicals generated by
`the thermal decomposition of the fluorinated
`silane gas and fluorinated radicals generated by
`the reaction of radical components of the
`thermally decomposed film-forming gas with
`the fluorinated silane gas to act as etching
`components to form an n+ or p+ silicon layer on
`the n-type or p-type silicon substrate surface.
`[Claim 3] The method for producing a BSF-type
`solar cell according to claims 1 or 2, wherein a
`mesh-like heat-generating member is arranged
`in the space near the n-type or p-type silicon
`substrate placed
`inside
`the
`film-forming
`chamber so that the substrate is covered.
`[Claim 4] A method for producing a BSF-type
`solar cell provided with a n-type or p-type silicon
`substrate, a p-type or n-type silicon layer
`provided on the light-entering side of the silicon
`substrate and forming a p-n junction with the
`silicon substrate, and an n+ or p+ silicon layer
`
`(2) JP H07-106611 A
`
`provided on the opposite side of the silicon
`substrate and forming an HL junction with the
`silicon substrate,
`the method comprising
`forming the n+ or p+ silicon layer on the heated
`silicon substrate surface by optical CVD.
`[Claim 5] A method for producing a BSF-type
`solar cell provided with a n-type or p-type silicon
`substrate, a p-type or n-type silicon layer
`provided on the light-entering side of the silicon
`substrate and forming a p-n junction with the
`silicon substrate, and an n+ or p+ silicon layer
`provided on the opposite side of the silicon
`substrate and forming an HL junction with the
`silicon substrate,
`the method comprising
`supplying fluorinated silane gas represented by
`SiHmF4-m (where m is 1 to 3) or SiF4 gas to a
`film-forming chamber in which an n-type or p-
`type silicon substrate has been arranged, and
`forming an n+ or p+ silicon layer on the heated
`silicon substrate surface by ion plating in the
`presence of the fluorinated silane gas or SiF4 gas.
`[Detailed Description of the Invention]
`[0001]
`[Field of Industrial Applicability] The present
`invention relates to a method for producing a
`back surface field (BSF) type solar cell, and in
`particular, to a method for producing a BSF type
`solar cell that enables stable production of a BSF
`type solar cell with high photoelectric
`conversion efficiency.
`[0002]
`[Prior Art] As shown, for example, in Fig. 7 and
`Fig. 8, a BSF type solar cell has, as its main
`components, a p-type single crystal silicon
`substrate (a), an n+ silicon layer (b) provided on
`the light-entering side of the silicon substrate
`(a) and forming a p-n junction with the silicon
`substrate (a), an indium tin oxide (ITO)
`antireflection layer (c) uniformly formed on the
`n+ silicon layer (b), a comb-shaped electrode
`(d) provided on the antireflection layer (c), a p+
`silicon layer (e) provided on the opposite side of
`the silicon substrate (a) and forming a high-low
`(HL) junction with the silicon substrate (a), and
`a back side electrode (f) uniformly provided on
`the back side of the p+ silicon layer (e), and a
`structure
`in which electrons and holes
`generated by incidence light are taken out as
`electric current from electrodes (d) and (f) is
`known.
`[0003] Fig. 9 is a conceptual diagram used to
`describe the structure of this BSF type solar cell
`in modeling terms, and Fig. 10 is an energy
`band diagram of a BSF type solar cell with this
`structure.
`[0004] Such a BSF type solar cell has the
`advantage
`of
`improving
`photoelectric
`conversion efficiency compared to solar cells
`with a structure not equipped with a p+ silicon
`
`

`

`
`
`layer (e) because the built-in electric field
`between the silicon substrate (a) and the p+
`silicon layer (e) forming the HL junction (g) acts
`as a barrier to the diffusion of minority carriers
`(in this case, electrons) to the back electrode f,
`increasing the apparent diffusion length of
`electrons, and the series resistance is reduced
`because the p+ silicon layer (e) becomes an
`ohmic electrode with low resistance to holes.
`[0005] A p+ silicon layer (e) that increases the
`open circuit voltage has been formed in the past
`by using the "thermal diffusion method”. Here,
`a single-crystal silicon substrate
`(a)
`is
`introduced into a reaction chamber filled with a
`p-type dopant gas containing, for example, B
`(boron), the dopant gas is thermally diffused
`into the silicon substrate a under high-
`temperature conditions of around 1,000°C, a p-
`type dopant layer such as aluminum (Al) is