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Click below for detailed party information:

Inventor

Jhon Jhy Liaw

Applicant

Taiwan Semiconductor Manufacturing Co., Ltd.

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD

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LIAW, JHON JHY, Assignor

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Gate-All-Around Field-Effect Transistors In Integrated Circuits

17/877,050 | U.S. Patent Application

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Filed July 29, 2022

Examiner Tong-Ho Kim

Class 257

Art Group 2811

Patent No. 11,968,819

Case Type Utility

Status Patented Case

Last Updated: 6 days, 4 hours ago

Date	#	Transaction
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Gate-All-Around Field-Effect Transistors In Integrated Circuits

17/877,050 | U.S. Patent Application

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