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Click below for detailed party information:

Inventors

Franz Hofmann Josef Willer

Assignee

INFINEON TECHNOLOGIES AG

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INFINEON TECHNOLOGIES AG, Assignor POLARIS INNOVATIONS LIMITED, Assignor QIMONDA AG, Assignor

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METHOD FOR FABRICATING A MEMORY CELL HAVING A MOS TRANSISTOR

09/642,328 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)

Filed Aug. 21, 2000

Examiner BETH E OWENS

Class 438

Art Group 2824

Patent No. 6,316,315

Case Type Utility - 438/259000

Status Patented Case

Parent PCT/DE98/03716 -

Child 198 07 188.4

Last Updated: 6 years, 5 months ago

Date	#	Transaction
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METHOD FOR FABRICATING A MEMORY CELL HAVING A MOS TRANSISTOR

09/642,328 | U.S. Patent Application

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