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Click below for detailed party information:

Inventors

Dirk Tobben Thomas Schuster

Assignee

INFINEON TECHNOLOGIES AG

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INFINEON TECHNOLOGIES AG, Assignor QIMONDA AG, Assignor POLARIS INNOVATIONS LIMITED, Assignor

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FIELD EFFECT TRANSISTOR AND FABRICATION METHOD

10/304,134 | U.S. Patent Application

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Location ELECTRONIC

Filed Nov. 25, 2002

Examiner FETSUM ABRAHAM

Class 257

Art Group 2826

Patent No. 6,765,248

Case Type Utility - 257/288000

Status Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362

Child 101 57 538.6

Last Updated: 5 years, 10 months ago

Date	#	Transaction
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FIELD EFFECT TRANSISTOR AND FABRICATION METHOD

10/304,134 | U.S. Patent Application

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