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METHOD OF MANUFACTURE OF A SILICON CARBIDE MOSFET INCLUDING A MASKING WITH A TAPERED SHAPE AND IMPLANTING IONS AT AN ANGLE

10/802,824 | U.S. Patent Application

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Location ELECTRONIC
Filed March 18, 2004
Examiner WILLIAM M BREWSTER
Class 438
Art Group 2823
Patent No. 7,029,969
Case Type Utility - 438/212000
Status Patented Case
Child 11/353,992 Patented
Child 2003-090956
Child 2004-017002
Last Updated: 6 years, 5 months ago
Date # Transaction