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Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer

10/277,660 | U.S. Patent Application

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Location ELECTRONIC
Filed Oct. 22, 2002
Examiner ROBERT M KUNEMUND
Class 117
Art Group 1792
Case Type Utility - 117/002000
Status Abandoned -- Failure to Respond to an Office Action
Parent 60/371,324 Expired
Last Updated: 5 years, 10 months ago
Date # Transaction