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Inventors

Hajime Nagano Kiyotaka Miyano Ichiro Mizushima

Assignee

KABUSHIKI KAISHA TOSHIBA

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MIYANO, KIYOTAKA, Assignor MIZUSHIMA, ICHIRO, Assignor NAGANO, HAJIME, Assignor

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SEMICONDUCTOR SUBSTRATE HAVING A PARTIAL SOI STRUCTURE, METHOD OF MANUFACTURING THE SAME, A SEMICONDUCTOR DEVICE HAVING A PARTIAL SOI STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

10/439,896 | U.S. Patent Application

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Filed May 16, 2003

Examiner MUNSON, GENE M

Class 257

Art Group 2811

Patent No. 7,122,864

Case Type Utility

Status Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362

Child 11/282,784 Expired

Last Updated: 1 week, 5 days ago

Date	#	Transaction
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SEMICONDUCTOR SUBSTRATE HAVING A PARTIAL SOI STRUCTURE, METHOD OF MANUFACTURING THE SAME, A SEMICONDUCTOR DEVICE HAVING A PARTIAL SOI STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

10/439,896 | U.S. Patent Application

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