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Inventors

Hajime Nagano Kiyotaka Miyano Ichiro Mizushima

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KABUSHIKI KAISHA TOSHIBA

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SEMICONDUCTOR SUBSTRATE HAVING A PARTIAL SOI STRUCTURE, METHOD OF MANUFACTURING THE SAME, A SEMICONDUCTOR DEVICE HAVING A PARTIAL SOI STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

10/439,896 | U.S. Patent Application

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Location ELECTRONIC

Filed May 16, 2003

Examiner GENE M MUNSON

Class 257

Art Group 2811

Patent No. 7,122,864

Case Type Utility - 257/350000

Status Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362

Child 11/282,784 Patented

Child 2003-072218

Last Updated: 5 years, 1 month ago

Date	#	Transaction
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SEMICONDUCTOR SUBSTRATE HAVING A PARTIAL SOI STRUCTURE, METHOD OF MANUFACTURING THE SAME, A SEMICONDUCTOR DEVICE HAVING A PARTIAL SOI STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

10/439,896 | U.S. Patent Application

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