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METHOD OF FORMING A MOSFET WITH DUAL WORK FUNCTION MATERIALS

11/553,072 | U.S. Patent Application

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Location ELECTRONIC
Filed Oct. 26, 2006
Examiner CHEUNG LEE
Class 438
Art Group 2812
Patent No. 7,354,822
Case Type Utility - 438/243000
Status Patented Case
Parent 10/622,477 Patented
Last Updated: 4 years, 3 months ago
Date # Transaction