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Integrated Circuit Including Gate Electrode Level Region Including Cross-Coupled Transistors Having Gate Contacts Located Over Inner Portion of Gate Electrode Level Region and Offset Gate Level Feature Line Ends

13/741,298 | U.S. Patent Application

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Location ELECTRONIC
Filed Jan. 14, 2013
Examiner WENSING W KUO
Class 257
Art Group 2826
Patent No. 8,853,793
Case Type Utility - 257/401000
Status Patented Case
Parent 12/753,758 Patented
Parent 12/402,465 Patented
Parent 61/36,460 Expired
Parent 61/42,709 Expired
Parent 61/45,953 Expired
Parent 61/50,136 Expired
Last Updated: 5 years, 11 months ago
Date # Transaction