throbber
Paper: 8
`Trials@uspto.gov
`Entered: October 1, 2018
`Tel: 571-272-7822
`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`SAMSUNG ELECTRONICS CO., LTD.,
`SAMSUNG ELECTRONICS AMERICA, INC.,
`AND SAMSUNG SEMICONDUCTOR, INC.,1
`Petitioner,
`
`v.
`
`TESSERA ADVANCED TECHNOLOGIES, INC.,
`Patent Owner.
`____________
`
`Case IPR2018-00798
`Patent 6,954,001 B2
`____________
`
`Before BARBARA A. PARVIS, ROBERT J. WEINSCHENK, and
`SCOTT B. HOWARD, Administrative Patent Judges.
`
`HOWARD, Administrative Patent Judge.
`
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
`
`
`
`
`
`1 The Notice of Filing Date Accorded inadvertently omitted “Samsung”
`from “Samsung Semiconductor, Inc.” in the caption. See Paper 5, 1. The
`parties are encouraged to use the heading on the first page of this Decision,
`and not the first page of the Notice of Filing Date Accorded (Paper 5), for all
`future filings in the proceeding.
`
`

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`IPR2018-00798
`Patent 6,954,001 B2
`INTRODUCTION
`I.
`Samsung Electronics Co., Ltd, Samsung Electronics America, Inc.,
`and Samsung Semiconductor, Inc. (collectively “Petitioner”) filed a Petition
`to institute an inter partes review of claims 1–18 of U.S. Patent No.
`6,954,001 B2 (Ex. 1001, “the ’001 patent”) pursuant to 35 U.S.C. §§ 311–
`319. Paper 1 (“Pet.”). Tessera Advanced Technologies, Inc. (“Patent
`Owner”) did not file a Patent Owner Preliminary Response.
`We have authority, acting on the designation of the Director, to
`determine whether to institute an inter partes review under 35 U.S.C. § 314
`and 37 C.F.R. § 42.4(a). Inter partes review may be not instituted unless
`“the information presented in the petition filed under section 311 and any
`response filed under section 313 shows that there is a reasonable likelihood
`that the petitioner would prevail with respect to at least 1 of the claims
`challenged in the petition.” 35 U.S.C. § 314(a). On April 24, 2018, the
`Supreme Court held that a decision to institute under 35 U.S.C. § 314 may
`not institute on less than all claims challenged in the petition. SAS Inst., Inc.
`v. Iancu, 138 S. Ct. 1348, 1359–60 (2018). For the reasons set forth below,
`upon considering the Petition and evidence of record, we determine that the
`information presented in the Petition establishes a reasonable likelihood that
`Petitioner will prevail with respect to at least one of the challenged claims.
`Accordingly, we institute inter partes review on all of the challenged claims
`based on the all of the grounds identified in the Petition.
`Our findings of fact and conclusions of law discussed below are based
`on the evidentiary record developed thus far and made for the sole purpose
`of determining whether the Petition meets the threshold for initiating review.
`This decision to institute trial is not a final decision as to the patentability of
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`Patent 6,954,001 B2
`any challenged claim or the construction of any claim limitation. Any final
`decision will be based on the full record developed during trial.
`
`Real Party-In-Interest
`A.
`Petitioner identifies itself—Samsung Electronics Co., Ltd, Samsung
`Electronics America, Inc., and Samsung Semiconductor, Inc.—as the real
`parties-in-interest. Pet. 2.
`
`Related Proceedings
`B.
`The parties identify the following current patent litigation proceedings
`in which the ’001 patent is asserted: (1) the Matter of Certain Wafer-Level
`Packaging Semiconductor Devices And Products Containing Same
`(Including Cellular Phones, Tablets, Laptops, And Notebooks) And
`Components Thereof, Inv. No. 337-TA-1080 (USITC); and (2) Tessera
`Advanced Techs., Inc. v. Samsung Elecs. Am., Inc., Civ. No. 2:17-cv-07621
`(D.N.J.). Id. at 2–3; Paper 7, 2. In addition, Petitioner identifies the
`following completed patent litigation proceeding in which the ’001 patent
`was asserted: Tessera, Inc. v. Broadcom Corp., Div. No. 1:16-cv-00380 (D.
`Del.). Pet. 2–3.
`Additionally, the parties identify two pending inter partes review
`proceedings: (1) Samsung Elecs. Co. v. Tessera Advanced Techs., Inc., Case
`IPR2018-00799 (involving the ’001 patent); and (2) Samsung Elecs. Co. v.
`Tessera Advanced Techs., Inc., Case IPR2018-00466 (involving a related
`patent, U.S. Patent No. 6,784,557). Pet. 3; Paper 7, 2. Petitioner also
`identifies Broadcom Corp. v. Tessera Advanced Techs., Inc., Case IPR2017-
`01486, which was terminated pursuant to a settlement agreement after trial
`was instituted. See Pet. 3; see also Broadcom Corp. v. Tessera Advanced
`
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`IPR2018-00798
`Patent 6,954,001 B2
`Techs., Inc., Case IPR2017-01486, slip op. at 2 (PTAB Jan. 2, 2018) (Paper
`13).
`
`The ’001 Patent
`C.
`The ’001 patent, titled “Semiconductor Device Including a Diffusion
`Layer,” states that an object of the invention is to provide a semiconductor
`device “having improved junction reliability between the metal wiring and a
`ball electrode mounted on an external electrode portion of the metal wiring.”
`Ex. 1001, [54], 2:35–41.
`Figure 15, reproduced below, illustrates a cross section of a
`conventional semiconductor device.
`
`
`
`As shown in Figure 15 above and as described in the ’001 patent, in a
`conventional semiconductor device, “the wiring electrodes of the substrate
`on which the semiconductor device is mounted are respectively connected to
`metal wirings 4 of [copper (Cu)] formed on the surface of semiconductor
`element 1 through ball electrodes 6 formed from the solder.” Id. at 2:4–9.
`According to the ’001 patent, “tin (Sn) contained in solder of the ball
`electrode 6 diffuses into [copper (Cu)] of the metal wiring 4 to form a Sn–
`Cu alloy layer.” Id. at 2:15–18. The ’001 patent states that, “[a]s a result, in
`the portion of the metal wiring 4 on which the ball electrode 6 is mounted
`(i.e., the external electrode portion) and the portion near the external
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`IPR2018-00798
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`electrode portion, the Sn–Cu alloy grows in the most part of the metal
`wiring.” Id. at 2:18–22. The ’001 patent states that “[t]he Sn–Cu alloy is
`weak and hard” and “is likely to be broken by the stresses” generated due to
`differences in the thermal expansion coefficients of the semiconductor
`element, the resin film (if included), and the substrate. Id. at 2:1–3, 2:22–31.
`Figure 2 of the ’001 patent is reproduced below.
`
`
`Figure 2 illustrates a cross-sectional view of “the semiconductor device of
`the first embodiment.” Id. at 8:11–12. As illustrated in Figure 2 above,
`electrodes 12 are formed on the surface of semiconductor element 11. Id. at
`8:10–11. A passivation film 13, also formed over the surface of
`semiconductor element 11, has an opening on each electrode 12. Id. at
`8:13–17. According to the ’001 patent, metal wirings 14 containing copper
`are formed on passivation film 13, and “[e]ach metal wiring 14 is electrically
`connected to a corresponding one of the electrodes 12.” Id. at 8:18–21. The
`’001 patent discloses that insulating film 15 is formed on metal wirings 14
`and passivation film 13 and “has openings in order to expose a portion of
`each metal wiring 14 which functions as an external electrode (hereinafter,
`referred to as ‘external electrode portion 14a’).” Id. at 8:21–26. According
`to the ’001 patent, “ball electrodes 16, which are formed from solder, are
`connected in a molten state to the openings of the insulating film 15, that is,
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`IPR2018-00798
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`the external electrode portions 14a of the metal wirings 14, respectively.”
`Id. at 8:27–35.
`The ’001 patent states that “[t]he present embodiment is characterized
`in that the thickness (e.g., 14 µm) of the external electrode portion 14a of the
`metal wiring 14 is greater than that of the other portion of the metal wiring
`14 (hereinafter, referred to as ‘non-electrode portion’).” Id. at 8:39–43. The
`’001 patent further states:
`When the metal wirings 14 contain, e.g., Cu (which is a
`commonly used metal wiring material), Sn contained in solder
`of the ball electrode 16 diffuses into Cu contained in the metal
`wiring 14, whereby a Sn–Cu alloy layer having low strength
`grows in the thickness direction of the external electrode
`portion 14a. However, since the thickness of the external
`electrode portion 14a of the metal wiring 14 is greater than that
`of the non-electrode portion of the metal wiring 14, this Sn–Cu
`alloy layer can be prevented from growing through the entire
`thickness of the external electrode portion 14a.
`Id. at 8:63–9:6. According to the ’001 patent, “[s]ince a part of the external
`electrode portion 14a is left unchanged into the Sn–Cu alloy layer, the
`strength of the metal wiring 14 can be maintained even if Cu is used as a
`metal wiring material.” Id. at 9:9–12. The ’001 patent adds that even if
`stresses due to a difference in thermal expansion coefficients are generated,
`“the . . . structure of the first embodiment can prevent the Sn–Cu alloy layer
`having low strength from being broken and thus can prevent disconnection
`of the metal wirings 14.” Id. at 9:20–24.
`The ’001 patent further states that “[i]n the first embodiment, the
`thickness of the external electrode portion 14a of the metal wiring 14 (e.g.,
`the total thickness of the non-electrode portion of the metal wiring 14 and
`the metal-material embedded portion) is preferably in the range of 10 µm to
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`Patent 6,954,001 B2
`20 µm.” Id. at 9:36–40. The patent also states that “in the first embodiment,
`the thickness of the non-electrode portion of the metal wiring 14 is
`preferably in the range of 0.01 µm to 8 µm, and more preferably in the range
`of 0.01 µm to 4 µm.” Id. at 9:25–28.
`
`The Challenged Claims
`D.
`Petitioner challenges claims 1–18 of the ’001 patent. Pet. 4. Claims 1
`and 10 are independent claims. Claims 1 and 10 are illustrative of the
`subject matter of the challenged claims and read as follows:
`1. A semiconductor device, comprising:
`a semiconductor element;
`a first electrode portion formed on the semiconductor element,
`said first electrode portion comprising a first metal
`component;
`a second electrode portion formed on the semiconductor
`element and electrically connected to said first electrode
`portion, said second electrode portion comprising a
`second metal component different from said first metal
`component; and
`a diffusion layer formed between said first electrode portion
`and said second electrode portion,
`wherein said diffusion layer comprises said first metal
`component and said second metal component. . . .
`10. A semiconductor device comprising:
`a semiconductor element;
`a first electrode portion formed on the semiconductor element,
`said first electrode portion comprising a first metal
`component;
`a second electrode portion formed on the semiconductor
`element and electrically connected to said first electrode
`portion, said second electrode portion comprising a
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`IPR2018-00798
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`second metal component different from said first metal
`component; and
`a diffusion layer formed between said first electrode portion
`and said second electrode portion,
`wherein said diffusion layer comprises said first metal
`component and said second metal component, and
`said first electrode portion and said diffusion layer have a
`combined thickness in the range of 10 µm to 20 µm.
`Id. at 26:15–28, 26:61–27:9, Certificate of Correction (correcting claim 10).
`
`E.
`
`Asserted Grounds of Unpatentability
`Petitioner asserts the following grounds of unpatentability:
`References
`Basis2
`Challenged Claim(s)
`Furuya3 and Takizawa4
`§ 103(a) 1–4, 6–8, 10–13, and 15–17
`Furuya, Takizawa, and Yaguchi5
`§ 103(a) 5 and 14
`Furuya, Takizawa, and Nozawa6
`§ 103(a) 9 and 18
`
`
`2 The Leahy-Smith America Invents Act (“AIA”) included revisions to 35
`U.S.C. § 100 et seq. effective on March 16, 2013. Because the ’001 patent
`issued from an application filed before March 16, 2013, we apply the pre-
`AIA versions of the statutory bases for unpatentability.
`3 Furuya et al., JP 2001-53184-A (published Feb. 23, 2001) (“Ex. 1005”).
`Petitioner provides the English language translation of Furuya which is
`being referenced. Ex. 1006. All references to foreign language documents
`in this Decision are made to the corresponding English translation.
`4 Takizawa et al., JP 2000-260894 A (published Sept. 22, 2000) (“Ex.
`1014”). Petitioner provides the English language translation of Takizawa
`which is being referenced. Ex. 1015.
`5 Yaguchi, et al., WO 00/55910, (published Sept. 21, 2000) (“Ex. 1010”).
`Petitioner provides the English language translation of Yaguchi which is
`being referenced. Ex. 1011.
`6 US 6,181,010 B1 (issued Jan. 30, 2001) (“Ex. 1012”).
`
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`IPR2018-00798
`Patent 6,954,001 B2
`Pet. 5. In its analysis, Petitioner relies on the declaration testimony of
`Miltiadis K. Hatalis, Ph.D (“Ex. 1002”).
`
`II. ANALYSIS
`A. Claim Construction
`In an inter partes review, we construe claim terms in an unexpired
`patent according to their broadest reasonable construction in light of the
`specification of the patent in which they appear. 37 C.F.R. § 42.100(b); see
`also Cuozzo Speed Techs., LLC v. Lee, 136 S. Ct. 2131, 2144–46 (2016)
`(upholding the use of the broadest reasonable construction standard).
`“Under a broadest reasonable interpretation, words of the claim must be
`given their plain meaning, unless such meaning is inconsistent with the
`specification and prosecution history.” Trivascular, Inc. v. Samuels, 812
`F.3d 1056, 1062 (Fed. Cir. 2016). In addition, the Board may not “construe
`claims during [an inter partes review] so broadly that its constructions are
`unreasonable under general claim construction principles.” Microsoft Corp.
`v. Proxyconn, Inc., 789 F.3d 1292, 1298 (Fed. Cir. 2015) (emphasis
`omitted). An inventor may provide a meaning for a term that is different
`from its ordinary meaning by defining the term in the specification with
`reasonable clarity, deliberateness, and precision. In re Paulsen, 30 F.3d
`1475, 1480 (Fed. Cir. 1994).
`Petitioner contends, for purposes of this proceeding, that no terms
`need to be construed. Pet. 18.
`Having considered the evidence presented, we conclude that no
`express claim construction is necessary for our determination of whether to
`institute review of the challenged claims. See Vivid Techs., Inc. v. Am. Sci.
`& Eng’g, Inc., 200 F.3d 795, 803 (Fed. Cir. 1999) (“[O]nly those terms need
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`be construed that are in controversy, and only to the extent necessary to
`resolve the controversy.”).
`
`Legal Principles of Obviousness
`B.
`An invention is not patentable as obvious “if the differences between
`the subject matter sought to be patented and the prior art are such that the
`subject matter as a whole would have been obvious at the time the invention
`was made to a person having ordinary skill in the art to which said subject
`matter pertains.” 35 U.S.C. § 103(a). The question of obviousness is
`resolved on the basis of underlying factual determinations including: (1) the
`scope and content of the prior art; (2) any differences between the claimed
`subject matter and the prior art; (3) the level of skill in the art; and, (4) where
`in evidence, objective evidence of nonobviousness such as commercial
`success, long-felt but unsolved needs, and failure of others. Graham v. John
`Deere Co., 383 U.S. 1, 17−18 (1966). When evaluating a combination of
`teachings, we also must “determine whether there was an apparent reason to
`combine the known elements in the fashion claimed by the patent at issue.”
`KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 418 (2007) (citing In re Kahn,
`441, F.3d 977, 988 (Fed. Cir. 2006)). We analyze the ground based on
`obviousness in accordance with the above-stated principles.
`
`Level of Ordinary Skill in the Art
`C.
`In determining the level of ordinary skill in the art, various factors
`may be considered, including the “type of problems encountered in the art;
`prior art solutions to those problems; rapidity with which innovations are
`made; sophistication of the technology; and educational level of active
`workers in the field.” In re GPAC, Inc., 57 F.3d 1573, 1579 (Fed. Cir. 1995)
`(citing Custom Accessories, Inc. v. Jeffrey-Allan Indus., Inc., 807 F.2d 955,
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`IPR2018-00798
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`962 (Fed. Cir. 1986)). In a given case, “one or more factors may
`predominate.” Id.
`Petitioner asserts that a person having ordinary skill in the art at the
`time of the invention
`would have had (i) a bachelor-level degree in mechanical
`engineering, materials science, electrical engineering, or a
`related field and 3–5 years of experience in the
`design/development of semiconductor packages; (ii) a Master’s-
`level degree in mechanical engineering, materials science,
`electrical engineering, or a related field and 1–3 years of
`experience in the design/development of semiconductor
`packages; or (iii) a Ph.D.-level degree in mechanical
`engineering, materials science, electrical engineering, or a
`related field and some experience in the area of semiconductor
`packaging.
`Pet. 18–19 (citing Ex. 1002 ¶¶ 21–23).
`For purposes of this Decision, we apply Petitioner’s definition of the
`level of ordinary skill in the art.7
`
`D. Obviousness over Furuya and Takizawa
`Petitioner asserts that the subject matter of claims 1–4, 6–8, 10–13,
`and 15–17 would have been obvious to a person of ordinary skill in the art at
`the time of the invention in light of the teachings of Furuya and Takizawa.
`Based on the current record, we are persuaded that Petitioner has established
`a reasonable likelihood of prevailing on its asserted obviousness ground with
`respect to claims 1–4, 6–8, 10–13, and 15–17.
`
`
`7 To the extent Patent Owner proposes a materially different level of
`ordinary skill in the art, that difference and its effect on the unpatentability
`analysis should be explicitly set forth in Patent Owner’s Response.
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`
`1. Summary of Furuya
`Furuya is titled “Semiconductor Device and Method of Manufacturing
`Same” and relates “to . . . semiconductor devices, which are known as a chip
`size packages (CSPs), in which a wiring layer is formed on a semiconductor
`element, and to a method for manufacturing the same.” Ex. 1006, ¶ 1, [54].
`Furuya discloses a semiconductor device that includes “an electrode
`which has been formed on a semiconductor element.” Id. ¶ 16. Furuya
`further discloses “a wiring pattern, which is connected with the electrode of
`the semiconductor element, [that] is formed on the first insulating layer
`[and] a metal post for external connection [that] is formed on the wiring
`pattern.” Id. Furuya also discloses an insulation layer “which is in close
`contact with the wiring pattern [and that] is formed in a manner so as to
`cover a side face of the metal post excluding a tip surface of the metal post.”
`Id.
`
`Furuya “provid[es] a highly reliable chip-size package type
`semiconductor device in which the connection strength between the metal
`post and the wiring pattern is high and the reliability of the electrical
`connection with the outside is high [thus] improving the reliability of
`external connections.” Id. ¶ 15. Furuya accomplishes this objective by first
`forming “a first insulating layer 5, which has substantially the same shape as
`a passivation film 4, . . . on the passivation film 4, in a manner so as to
`expose electrodes 3, which have been formed on a semiconductor element
`2.” Id. ¶ 27. Next, “a wiring pattern 7 (wiring layer) . . . is connected with
`the electrodes 3 . . . formed on the first insulating layer 5” and “metal posts 9
`for external connection . . . are formed at predetermined positions on the
`wiring pattern 7.” Id. Then, “a second insulating layer 8 is formed . . . in
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`IPR2018-00798
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`close contact with the wiring pattern 7 and the first insulating layer 5, and
`which covers the side face of the metal post 9 excluding the tip surface of
`the metal post 9.” Id. Finally, the “semiconductor element is resin-sealed
`with sealing resin 1 in a manner to expose the tip surface of the metal post 9,
`and an external connection terminal 14 is provided on the metal post 9.” Id.
`Furuya Figure 4(d), annotated by Petitioner and reproduced below,
`illustrates these features.
`
`
`
`Pet. 21. Figure 4(d) is a sectional explanatory view “illustrating one
`example of a method of manufacturing a semiconductor device of the
`present invention in the order of the steps,” and has been annotated by
`Petitioner to identify various aspects of the semiconductor. Ex. 1006 ¶ 67.
`Furuya discloses that the wiring is desirably made from “a material
`with good conductivity” such as “copper, silver, aluminum, alloys thereof,
`other metals that are good conductors or the like.” Id. ¶ 35. Furuya further
`discloses that “[i]f copper, silver, or the like is used as the material for the
`wiring pattern 7” then then “it is preferable to form a metal barrier layer 6
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`made of a TiW alloy, TiN, TaN, W, Cr or the like as an undercoat layer, and
`then form the wiring pattern 7 on the metal barrier layer 6.” Id. Furuya also
`discloses that the “metal post[s] . . . formed on the wiring pattern” may also
`be made of copper. Id. ¶ 53.
`
`2. Summary of Takizawa
`Takizawa is titled “Semiconductor Device and Method of
`Manufacturing Semiconductor Device.” Ex. 1015, [54]. Takizawa discloses
`a “semiconductor device [that] has [a] wiring part 2 containing [copper] that
`is connected to a semiconductor chip 1.” Id. ¶ 34. Takizawa further states
`that “the solder ball 11 containing [tin] is connected to the wiring part 2.”
`Id. ¶ 34. Takizawa also discloses “an electrode part 12 that is placed on the
`semiconductor chip 1 on the semiconductor device according to the present
`embodiment, and the solder ball 11 and the electrode part 12 are connected
`by the metal 5.” Id. The Petition contains an annotated version for
`Takizawa Figure 1, reproduced below, that Petitioner contends shows those
`features.
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`
`
`
`Pet. 26. Takizawa Figure 1 “is a cross sectional view illustrating the
`semiconductor device according to one embodiment of the present
`invention” and has been annotated by Petitioner to identify the solder ball,
`wiring part, and electrode. Id.; Ex. 1015, 10.
`Takizawa also discloses that “a strong [copper-tin] alloy layer is
`formed on the bonding part between the solder ball 11 and the wiring part 2,
`or in other words, the land 7 portion on which the solder ball 11 is placed on
`the wiring part 2.” Ex. 1015 ¶ 35; see also id. ¶ 20 (discussing the benefit of
`having the tin from the solder ball diffuse to the copper to “form a Cu-SN
`alloy layer with sufficient thickness to prevent detachment of the solder ball
`near the bonding part, [which] can increase the strength of the bonding
`parts[] and . . . reduce the occurrence rate of fractures and cracks near the
`bonding part”). Takizawa further discloses that “[f]orming the [copper-tin]
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`alloy layer with a thickness of at least 1.87 μm . . . was preferable in order to
`prevent detachment of the solder ball 11.” Id. ¶ 40.
`
`3. Claim 1
`Petitioner argues that the combination of Furuya and Takizawa
`teaches all of the limitations recited in claim 1 and that a person of ordinary
`skill in the art would have been motivated to combine the teachings of the
`two references. Pet. 34–45.
`Petitioner contends Furuya teaches “[a] semiconductor device.” See
`id. at 34. Specifically, Petitioner argues Furuya’s title and preamble both
`state that Furuya is directed to a semiconductor device. Id. (citing
`Ex. 1006, [54], ¶ 1; Ex. 1002 ¶¶ 87–88).
`Petitioner further contends Furuya teaches a “a semiconductor
`element.” See id. at 34–35. Specifically, Petitioner points to semiconductor
`element 2. Id. (citing Ex. 1006 ¶¶ 1, 16, 27, 37, 51, Fig. 1; Ex. 1002 ¶¶ 89–
`91).
`
`Petitioner also argues Furuya teaches “a first electrode portion formed
`on the semiconductor element, said first electrode portion comprising a first
`metal component.” See id. at 36–38. Specifically, Petitioner argues “[t]he
`metal post, wiring pattern, and metal barrier layer collectively act as the first
`electrode portion and serve to create external electrical connections.” Id.
`at 36 (citing Ex. 1006 ¶¶ 52–53; Ex. 1002 ¶ 92); see also id. at 36–38 (citing
`Ex. 1006 ¶¶ 46, 52–53, Fig. 1; Ex. 1002 ¶¶ 92–95).
`Petitioner further contends Furuya and Takizawa both teach “a second
`electrode portion formed on the semiconductor element and electrically
`connected to said first electrode portion, said second electrode portion
`comprising a second metal component different from said first metal
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`component.” See id. at 38–41. Specifically, Petitioner argues Furuya
`teaches “an external connection terminal (i.e., a second electrode portion)
`placed at the tip end of the metal post (i.e., the top of a first electrode
`portion), which external connection terminal is formed of a soldering metal
`component such as tin.” Id. at 38 (citing Ex. 1006 ¶ 36; Ex. 1002 ¶ 97); see
`also id. at 38–40 (citing Ex. 1006 ¶¶ 36, 43–44; Ex. 1002 ¶¶ 97–100).
`Petitioner further asserts that tin, used in the second electrode portion, “is
`different from the first metal component of the first electrode portion that
`includes copper.” Id. at 40 (citing Ex. 1002 ¶ 100).
`With respect to Takizawa, Petitioner asserts Takizawa teaches a
`second electrode portion comprising a second metal component because it
`employs a solder ball (i.e., second electrode portion) that comprises tin and
`is mounted on a copper wiring layer (i.e., first electrode portion). Id. (citing
`Ex. 1015 ¶¶ 3, 9, 19–20, 33–35; Ex. 1002 ¶ 101).
`Petitioner also argues Furuya and Takizawa both teach “a diffusion
`layer formed between said first electrode portion and said second electrode
`portion.” Id. at 41–43. More specifically, Petitioner contends Furuya
`teaches “that when a connection is made between the metal post (i.e., first
`electrode portion) and mounting board using solder (i.e., second electrode
`portion), that some of the metal post will ‘dissolve and dissipate’ into the
`solder, creating a diffusion layer” and that a person having ordinary skill in
`the art “would have understood that this dissolution of the metal post into the
`solder results in a diffusion layer.” Id. at 41–42 (citing Ex. 1006 ¶ 7,
`Ex. 1002 ¶¶ 103–104). Petitioner further contends that although the above
`teaching relates to the prior art, the person having ordinary skill in the art
`“would have understood that the same principle results in a diffusion layer
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`Patent 6,954,001 B2
`forming between the external electrical connection 14 and the metal post in
`Figure 1 as well, considering that similar materials and techniques are used
`to connect the metal post and mounting board.” Id. at 42 (citing Ex. 1002
`¶ 104; Ex. 1006, ¶¶ 55–56).
`Additionally, Petitioner contends Takizawa teaches a diffusion layer,
`formed between its wiring and solder ball. Id. at 42–43 (citing Ex. 1015
`¶ 35, Fig. 2(b), Fig. 8(b); Ex. 1002 ¶¶ 105–106).
`Petitioner also contends Furuya and Takizawa both teach “wherein
`said diffusion layer comprises said first metal component and said second
`metal component.” Id. at 43–45. Specifically, Petitioner avers “Furuya
`describes a soldering process in which a molted eutectic solder containing
`tin is in direct contact with a copper metal external electrode” and that a
`person having ordinary skill in the art would know that “when solder
`containing tin (Sn) is connected in a molten state to a copper electrode (Cu),
`the tin and copper form a Sn-Cu diffusion layer.” Id. at 43–44 (citing
`Ex. 1006 ¶¶ 55–56; Ex. 1002 ¶ 108; Ex. 1001, 2:12–29) (emphasis omitted).
`Alternatively, Petitioner asserts “Takizawa discloses a diffusion layer
`that forms between the first and second electrode portions. Takizawa further
`discloses that the diffusion layer comprises the first metal component (from
`the first electrode portion) and the second metal component (from the second
`electrode portion).” Id. at 44 (citing Ex. 1015 ¶¶ 33–34; Ex. 1002 ¶ 110);
`see also id. at 44–45 (citing Ex. 1015 ¶¶ 3, 9, 19–20, 33–35, 42, 44, Figs. 2,
`8; Ex. 1002 ¶¶ 110–113).
`Finally, Petitioner argues a person having ordinary skill in the art
`would have been motivated to combine the relevant teachings of Furuya and
`Takizawa. See id. at 31–34. According to Petitioner, a person of ordinary
`
`18
`
`

`

`IPR2018-00798
`Patent 6,954,001 B2
`skill in the art would have “incorporate[ed] Takizawa’s teaching to improve
`the connection reliability between a solder ball and a metal wire by forming
`a copper- tin diffusion layer between the wiring and the solder ball in the
`optimum thickness range of 1.87 μm to 4 μm.” Id. at 31–32 (citing Ex. 1002
`¶ 82); see also id. at 33–34 (citing Ex. 1002 ¶¶ 35, 86; Ex. 1015 ¶ 40; Ex.
`1020, 52–53). In further support of its argument, Petitioner asserts that the
`two references are in the same field of technology, were filed around the
`same time, and are directed to similar devices that operate in a similar
`manner and address a similar problem. Id. at 32–33 (citing Ex. 1002 ¶¶ 82–
`85; Ex. 1006, [57], ¶¶ 8, 15, Fig. 1; Ex. 1015, [57], ¶¶ 6–10, Fig. 1(a)).
`Petitioner further asserts that “combining the thicker alloy layer of Takizawa
`to the semiconductor of Fuyura . . .would have led a [person having ordinary
`skill in the art] to conclude that the combination would yield a predictable
`and successful result.” Id. at 34 (citing Ex. 1002 ¶ 86).
`Having reviewed the record, we determine, for the reasons stated in
`the Petition and discussed above, that Petitioner has shown sufficiently for
`the purpose of institution that the combination of Furuya and Takizawa
`teaches each limitation of claim 1, and that a person of ordinary skill in the
`art would have had reason to combine the references’ teachings in the
`manner asserted with a reasonable expectation of success.
`
`4. Claim 10
`For most of the limitations recited in independent claim 10, Petitioner
`relies on arguments and evidence discussed above with respect to
`independent claim 1. See id. at 56–57.
`In addition to the limitations recited in claim 1, claim 10 further
`recites: “wherein . . . said first electrode portion and said diffusion layer
`
`19
`
`

`

`IPR2018-00798
`Patent 6,954,001 B2
`have a combined thickness in the range of 10 μm to 20 μm.” Ex. 1001,
`27:8–9, Certificate of Correction. Petitioner asserts Furuya in combination
`with Takizawa teaches this additional limitation. Pet. 58–62.
`Specifically, Petitioner contends that Furuya teaches “that the metal
`post portion of the first electrode portion is 15 μm” and that the wire portion
`is 0.7 μm thick, resulting in “the entire thickness of the first electrode
`portion in Furuya [being] 15.7 μm.” Id. at 58 (citing Ex. 1006 ¶ 52; Ex.
`1002 ¶ 140).
`Petitioner further contends that because Furuya is silent as to the size
`of the diffusion layer, a person of ordinary skill in the art would turn to
`Takizawa, which teaches the advantages of having a specific thickness to the
`diffusion layer. Id. at 58–60. Based on the ranges in Takizawa, Petitioner
`asserts that the combined thickness could range between 15.7 μm and 19.7
`μm, which is within the range cited in claim 10. Id. at 58–61 (Ex. 1015
`¶¶ 9–12, 35, 40, Figs. 2, 8; Ex. 1002 ¶¶ 140–141).
`Having reviewed the record, we determine, for the reasons stated in
`the Petition and discussed above, that Petitioner has shown sufficiently for
`the purpose of institution that the combination of Furuya and Takizawa
`teaches each limitation of claim 10, and that a person of ordinary skill in the
`art would have had reason to combine the references’ teachings in the
`manner asserted with a reasonable expectation of success.
`
`5. Dependent Claims 2–4, 6–8, 11–13, and 15–17
`Because Petitioner has demonstrated a reasonable likelihood of
`success in proving that at least one claim of the ’001 patent is unpatentable,
`we will institute on all

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