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IPR2019-00022, No. 1016 Exhibit - Elsevier Declaration regarding Tong Ex 1009 Part 2 of 2 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1016 Exhibit - Elsevier Declaration regarding Tong Ex 1009 Part 2 of 2 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1010 Exhibit - Q Tong et al, Semiconductor Wafer Bonding Science andTechnology, John Wiley Sons, Inc 1999 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1010 Exhibit - Q Tong et al, Semiconductor Wafer Bonding Science andTechnology, John Wiley Sons, Inc 1999 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1026 Exhibit - Hall Ellis Declaration (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1016-2 Exhibit - Elsevier Declaration regarding Tong Ex 1009 Part 1 of 2 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1016-2 Exhibit - Elsevier Declaration regarding Tong Ex 1009 Part 1 of 2 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1021 Exhibit - Qin Yi Tong, Wafer Bonding and Layer Splitting forMicrosystems, 11 Adv Mater 17, 1409 1999 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1021 Exhibit - Qin Yi Tong, Wafer Bonding and Layer Splitting forMicrosystems, 11 Adv Mater 17, 1409 1999 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1009 Exhibit - Q Tong et al, Semiconductor Wafer Bonding RecentDevelopments, 37 Materials Chemistry and Physics 1011994 Tong (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1022 Exhibit - Robert W Bower, Low temperature Si3N4 direct bonding, 62Appl Phys Lett 26, 3485 1993 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1022 Exhibit - Robert W Bower, Low temperature Si3N4 direct bonding, 62Appl Phys Lett 26, 3485 1993 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1001 Exhibit - US Patent No 8,153,505 the 505 Patent (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1001 Exhibit - US Patent No 8,153,505 the 505 Patent (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1019 Exhibit - US Patent No 5,503,704, Nitrogen Based Low TemperatureDirect Bonding filed 1994 Bower (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1013 Exhibit - John L Vossen et al, Thin Film Processes II, AcademicPress 1991 excerpts (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1013 Exhibit - John L Vossen et al, Thin Film Processes II, AcademicPress 1991 excerpts (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1011 Exhibit - Johann Steinkirchner et al, Silicon Wafer Bonding viaDesigned Monolayers, 7 Advanced Materials 7, 662 1995 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1012 Exhibit - John L Vossen et al, Thin Film Processes, Academic Press1978 excerpts (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1020 Exhibit - Yang Li, Systematic Low Temperature Bonding and ItsApplication To The Hydrogen Ion Cut Process And Three Dimensional Structures, University of Californi...
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IPR2019-00022, No. 1020 Exhibit - Yang Li, Systematic Low Temperature Bonding and ItsApplication To The Hydrogen Ion Cut Process And Three Dimensional Structures, University of California, Davis1999 (
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IPR2019-00022, No. 1015 Exhibit - Japan Patent Appl Laid Open Pub No H7 249749, Methodof Manufacturing SOI Substrate Sept 26, 1995Yamagata (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1015 Exhibit - Japan Patent Appl Laid Open Pub No H7 249749, Methodof Manufacturing SOI Substrate Sept 26, 1995Yamagata (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1002 Exhibit - Prosecution File History of US Patent No 8,153,505 (P.T.A.B. Oct. 2, 2018)
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IPR2019-00022, No. 1002 Exhibit - Prosecution File History of US Patent No 8,153,505 (P.T.A.B. Oct. 2, 2018)
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